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US4888633A
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Charge transfer device having a buried transfer channel with higher and lower concentrations
Assignee: Panasonic Holdings Corp
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Filing: 1981-06-16
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Granted: 1989-12-19
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Expires: 2001-06-16
Abstract
Abstract A charge transfer device comprising a semiconductor body including a first conductivity type region and a second conductivity region which defines a charge transfer channel below a major surface of the semiconductor body. An insulative layer is provided on the major surface. A plurality of electrodes is attached to the insulative layer to produce potential wells in response to application of different potentials thereto with respect to a common electrode attached to the opposite surface of the semiconductor body. The n-type conductivity charge transfer channel includes a center section of lower impurity concentration and a peripheral section of higher impurity concentration which substantially eliminates the undesirable lateral field effect which would otherwise occur in an area adjacent to the boundary with the first conductivity region.
Inventors
- 👤 Yasuaki Terui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:23
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A charge transfer device comprising a body of semiconductor having a first region of a given conductivity type and a second region of an opposite conductivity type which is formed below a major surface of said semiconductor body, said second region comprising a section of lower impurity concentration and a section of higher impurity concentration in a lateral peripheral area of said second region, an insulative layer formed on a major surface of said semiconductor body, and a common electrode formed on the opposite surface of said semiconductor body.
Claim 2
Dependent Claim
89 words
A charge transfer device comprising a body of semiconductor having a first region of a given conductivity type and a second region of an opposite conductivity type which is formed below a major surface of said semiconductor body, said second region comprising a section of lower impurity concentration and a section of higher impurity concentration in a lateral peripheral area of said second region, an insulative layer formed on a major surface of said semiconductor body, and a common electrode formed on the opposite surface of said semiconductor body.
Claim 3
Dependent Claim
106 words
A charge transfer device comprising a body of semiconductor having a first region of a given conductivity type and a second region of an opposite conductivity type which is formed below a major surface of said semiconductor body, said second region comprising a section of lower impurity concentration and a section of higher impurity concentration in a lateral peripheral area of said second region, said section of higher concentration provided on laterally displaced opposite sides of said section of lower concentration, an insulative layer formed on a major surface of said semiconductor body, and a common electrode formed on the opposite surface of said semiconductor body.
Claim 4
Dependent Claim
106 words
A charge transfer device comprising a body of semiconductor having a first region of a given conductivity type and a second region of an opposite conductivity type which is formed below a major surface of said semiconductor body, said second region comprising a section of lower impurity concentration and a section of higher impurity concentration in a lateral peripheral area of said second region, said section of higher concentration provided on laterally displaced opposite sides of said section of lower concentration, an insulative layer formed on a major surface of said semiconductor body, and a common electrode formed on the opposite surface of said semiconductor body.
Claim 5
Dependent Claim
110 words
A charge transfer device comprising a body of semiconductor having a first region of a given conductivity type and a second region of an opposite conductivity type which is formed below a major surface of said semiconductor body, said second region comprising a section of lower impurity concentration and a section of higher impurity concentration in a lateral peripheral area of said second region, said section of higher impurity concentration provided both on laterally displaced opposite sides of and below said section of lower concentration, an insulative layer formed on a major surface of said semiconductor body, and a common electrode formed on the opposite surface of said semiconductor body.
Claim 6
Dependent Claim
110 words
A charge transfer device comprising a body of semiconductor having a first region of a given conductivity type and a second region of an opposite conductivity type which is formed below a major surface of said semiconductor body, said second region comprising a section of lower impurity concentration and a section of higher impurity concentration in a lateral peripheral area of said second region, said section of higher impurity concentration provided both on laterally displaced opposite sides of and below said section of lower concentration, an insulative layer formed on a major surface of said semiconductor body, and a common electrode formed on the opposite surface of said semiconductor body.
Claim 7
Dependent Claim
23 words
A charge transfer device as set forth in claim 1, 2 or 3, wherein said given conductivity type region has a p-type conductivity.
Claim 8
Dependent Claim
28 words
A charge transfer device as set forth in claim 1, 2 or 3, wherein said section of higher impurity concentration extends in the direction of transfer of electrons.
Claim 9
Dependent Claim
42 words
A charge transfer device as set forth in any one of claims 1, 2 or 3, further comprising a plurality of electrodes placed on said insulative layer and wherein said section of higher impurity concentration is provided below said plurality of electrodes.
Claim 10
Dependent Claim
40 words
A charge transfer device as set forth in claim 1, 2 or 3, wherein the impurity concentration of said higher impurity concentration section is approximtely 1.5 to 3 times higher than the impurity concentration of said lower impurity concentration section.
Claim 11
Dependent Claim
168 words
A semiconductor charge transfer device comprising: a main body of a given conductivity type and having a horizontal major surface, an insulative layer formed on said horizontal major surface, a common electrode formed on an opposite horizontal surface of said main body, a portion of a conductivity type opposite to the conductivity of said main body and formed within said main body adjoining said horizontal major surface thereof, said portion of opposite conductivity type comprising first and second regions of different impurity concentrations, one of said first and second regions being horizontally displaced from and adjoining the other, said one of said regions including three segments, a first segment horizontally displaced from and adjoining one surface of said other region, a second segment horizontally displaced from and adjoining an opposing surface of said other region, and a third segment, vertically displaced from and adjoining a horizontal surface of said other region within said main body, said other region has having a lower impurity concentration than said one region.
Claim 12
Dependent Claim
168 words
A semiconductor charge transfer device comprising: a main body of a given conductivity type and having a horizontal major surface, an insulative layer formed on said horizontal major surface, a common electrode formed on an opposite horizontal surface of said main body, a portion of a conductivity type opposite to the conductivity of said main body and formed within said main body adjoining said horizontal major surface thereof, said portion of opposite conductivity type comprising first and second regions of different impurity concentrations, one of said first and second regions being horizontally displaced from and adjoining the other, said one of said regions including three segments, a first segment horizontally displaced from and adjoining one surface of said other region, a second segment horizontally displaced from and adjoining an opposing surface of said other region, and a third segment, vertically displaced from and adjoining a horizontal surface of said other region within said main body, said other region has having a lower impurity concentration than said one region.
Claim 13
Dependent Claim
126 words
A semiconductor charge transfer device comprising: a main body of a given conductivity type and having a horizontal major surface, an insulative layer formed on said horizontal major surface, a common electrode formed on an opposite horizontal surface of said main body, a buried structure including a portion of a conductivity type opposite to the conductivity of said main body and formed within said main body adjoining said horizontal major surface thereof, said portion of opposite conductivity type comprising a buried channel region formed of a region having a first impurity concentration and an isolating region surrounding said buried channel region and having a different impurity concentration, greater than said first impurity concentration, said isolating region being horizontally displaced from and adjoining the buried channel region.
Claim 14
Dependent Claim
126 words
A semiconductor charge transfer device comprising: a main body of a given conductivity type and having a horizontal major surface, an insulative layer formed on said horizontal major surface, a common electrode formed on an opposite horizontal surface of said main body, a buried structure including a portion of a conductivity type opposite to the conductivity of said main body and formed within said main body adjoining said horizontal major surface thereof, said portion of opposite conductivity type comprising a buried channel region formed of a region having a first impurity concentration and an isolating region surrounding said buried channel region and having a different impurity concentration, greater than said first impurity concentration, said isolating region being horizontally displaced from and adjoining the buried channel region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-18 | 1993-06-19 | 1993-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-18 | 1997-06-19 | 1997-12-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-18 | 2001-06-19 | 2001-12-19 | $7700.00 | Window Closed / Lapsed |