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US4888062A
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Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %
Assignee: Canon Inc
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Filing: 1988-08-26
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Granted: 1989-12-19
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Expires: 2008-08-26
Abstract
Abstract An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe 1-x Te x :H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7. The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not exhibit any undesirable light-induced fatigue even upon continuous use for a long period of time.
Inventors
- 👤 Katsumi Nakagawa
- 👤 Masahiro Kanai
- 👤 Shunichi Ishihara
- 👤 Kozo Arao
- 👤 Yasushi Fujioka
- 👤 Akira Sakai
- 👤 Tsutomu Murakami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:47
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/174; H10F71/00; H10F71/125; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1233; H10F77/1237; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543; Y02E10/547; Y02E10/548
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
85 words
An improved pin junction photovoltaic element which generates photoelectromotive force upon irradiation of light, having a junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms and hydrogen atoms, said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.
Claim 2
Dependent Claim
85 words
An improved pin junction photovoltaic element which generates photoelectromotive force upon irradiation of light, having a junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms and hydrogen atoms, said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.
Claim 3
Dependent Claim
70 words
The pin junction voltaic element according to claim 1, wherein said p-type semiconductor layer or/and said n-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms, hydrogen atoms, and a dopant of p-type or n-type, said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 86 vol % per unit volume.
Claim 4
Dependent Claim
33 words
The pin junction photovoltaic element according to claim 2, wherein said p-type dopant is a member selected from the group consisting of Group I elements and Group V elements of the Periodic Table.
Claim 5
Dependent Claim
14 words
The pin junction photovoltaic element according to claim 3, wherein said member is lithium.
Claim 6
Dependent Claim
110 words
An improved pin junction photovoltaic element which generates photoelectromotive force upon irradiation of light, having a junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms, tellurium atoms and hydrogen atoms the quantitative ratio of said selenium atoms to said tellurium atoms in said deposited film is in the range from 1:9 to 3:7 said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.
Claim 7
Dependent Claim
110 words
An improved pin junction photovoltaic element which generates photoelectromotive force upon irradiation of light, having a junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms, tellurium atoms and hydrogen atoms the quantitative ratio of said selenium atoms to said tellurium atoms in said deposited film is in the range from 1:9 to 3:7 said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.
Claim 8
Dependent Claim
95 words
The pin junction photovoltaic element according to claim 5, wherein said p-type semiconductor layer or/and said n-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms, tellurium atoms, hydrogen atoms, and a dopant of p-type or n-type, the quantitative ratio of said selenium atoms to said tellurium atoms in said deposited film is in the range from 1:9 to 3:7, said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.
Claim 9
Dependent Claim
33 words
The pin junction photovoltaic element according to claim 6, wherein said p-type dopant is a member selected from the group consisting of Group I elements and Group V elements of the Periodic Table.
Claim 10
Dependent Claim
14 words
The pin junction photovoltaic element according to claim 7, wherein said member is lithium.
References Cited (Backward Citations)
US4596645A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-12-18 | 1993-06-19 | 1993-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-18 | 1997-06-19 | 1997-12-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-18 | 2001-06-19 | 2001-12-19 | $7700.00 | Window Closed / Lapsed |