US4884116A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double diffused mosfet with potential biases
Assignee: Toshiba Corp
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Filing: 1987-12-14
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Granted: 1989-11-28
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Expires: 2007-12-14
Abstract
Abstract First and second single crystal silicon substrates are integrated, by means of a thermal treatment, with first and second silicon oxide films formed on surfaces of said respective first and second single crystal silicon substrates in contact with eacth other. More specifically, an insulating region is formed by integrating first and second silicon oxide films formed on the first and second single crystal silicon substrates. First and second semiconductor regions constituted by the first and second single crystal silicon substrates are electrically isolated by the insulating region. As a result, it is possible to reduce the width of the depletion layer generated in the second semiconductor region by the influence of the first semiconductor region in which an element is formed. A back gate region formed in the second semiconductor region and the first semiconductor region, in which an element is not formed, are held substantially at an equal potential. In this way, it is possible to improve the yield voltage characteristics between the first semiconductor region, which does not form any element, and the back gate region. The insulating region which electrically isolates the first and second semiconductor regions from each other, is formed by bonding together first and second silicon oxide films on surface of the first and second single crystal silicon substrates. Therefore, the process of manufacture is simplified.
Inventors
- 👤 Koji Shirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/65; H10D30/657; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6713; H10D30/6715; H10D30/6717; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D88/00; H10P; H10P36/00; H10P36/03; H10P36/07; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
81 words
A semiconductor device comprising: a first semiconductor region of a first conductivity type; an insulating region formed over the entire surface of said first semiconductor region; a second semiconductor region of a second conductivity type formed on the entire surface of said insulating region; and a third semiconductor region of said first conductivity type formed in said second semiconductor region and contacting said insulating region, said third semiconductor region being held at a potential substantially equal to said first semiconductor region.
Claim 2
Dependent Claim
81 words
A semiconductor device comprising: a first semiconductor region of a first conductivity type; an insulating region formed over the entire surface of said first semiconductor region; a second semiconductor region of a second conductivity type formed on the entire surface of said insulating region; and a third semiconductor region of said first conductivity type formed in said second semiconductor region and contacting said insulating region, said third semiconductor region being held at a potential substantially equal to said first semiconductor region.
Claim 3
Dependent Claim
19 words
The semiconductor device according to claim 1, wherein said first semiconductor region consists of a single crystal silicon region.
Claim 4
Dependent Claim
19 words
The semiconductor device according to claim 1, wherein said second semiconductor region consists of a single crystal silicon region.
Claim 5
Dependent Claim
70 words
The semiconductor device according to claim 1, wherein said insulating region is formed by thermal treatment of a first silicon oxide film formed on a surface of said first semiconductor region and a second silicon oxide film formed on a surface of said second semiconductor region, said first and second silicon oxide films being in contact with each other over an extended area to form a single silicon oxide film.
Claim 6
Dependent Claim
164 words
A semiconductor device comprising: a first semiconductor region of a first conductivity type; an insulating region formed on the entire surface of said first semiconductor region; a second semiconductor region, of a second conductivity type, formed on the entire surface of said insulating region; an element separation region formed in said second semiconductor region and contacting said insulating region to define an island region; a third semiconductor region, of the first conductivity type, formed in said island region and contacting said insulating region, said third semiconductor region being held at substantially the same potential as said first semiconductor region; a first high impurity concentration region of a second conductivity type formed in a surface of said second semiconductor region opposite said insulating region; a second high impurity concentration region of the second conductivity type formed in a surface of said island region opposite said insulating region; an insulating layer formed on said third semiconductor region; and a conductive layer formed on said insulating layer.
Claim 7
Dependent Claim
164 words
A semiconductor device comprising: a first semiconductor region of a first conductivity type; an insulating region formed on the entire surface of said first semiconductor region; a second semiconductor region, of a second conductivity type, formed on the entire surface of said insulating region; an element separation region formed in said second semiconductor region and contacting said insulating region to define an island region; a third semiconductor region, of the first conductivity type, formed in said island region and contacting said insulating region, said third semiconductor region being held at substantially the same potential as said first semiconductor region; a first high impurity concentration region of a second conductivity type formed in a surface of said second semiconductor region opposite said insulating region; a second high impurity concentration region of the second conductivity type formed in a surface of said island region opposite said insulating region; an insulating layer formed on said third semiconductor region; and a conductive layer formed on said insulating layer.
Claim 8
Dependent Claim
30 words
The semiconductor device according to claim 5, wherein said element separation region consists of a groove selectively formed in said second semiconductor region and an insulating layer filling said groove.
Claim 9
Dependent Claim
19 words
The semiconductor device according to claim 5, wherein said first semiconductor region consists of a single crystal silicon region.
Claim 10
Dependent Claim
19 words
The semiconductor device according to claim 5, wherein said second semiconductor region consists of a single crystal silicon region.
Claim 11
Dependent Claim
69 words
The semiconductor device according to claim 5, wherein said insulating region is formed by thermally treating a first silicon oxide film formed on one surface of said first semiconductor region and a second silicon oxide film formed on one surface of said second semiconductor region, said first and second silicon oxide films being in contact with each other over an extended area to form a single silicon oxide film.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-11-27 | 1993-05-29 | 1993-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-27 | 1997-05-29 | 1997-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-27 | 2001-05-29 | 2001-11-28 | $7700.00 | Window Closed / Lapsed |