Abstract Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of each may be substantially intrinsic or lightly doped. One or more control electrodes or gates located adjacent to each current path project a variable electric field over the ambipolar path, which modulates current by controlling the amount of charge carriers of both polarities injected into the semiconductor body. In most of the single gate embodiments, the electrodes extend across a portion, preferably a major portion such as 75% or 90%, or the length of the current path, but not the entire length of the current path. The embodiments having a plurality of gates typically have two insulated gates, one extending from the anode electrode and the other extending from the cathode electrode. The gates in a single device may overlap. Embodiments having electrodes with doped microcrystalline regions for improved carrier injection are disclosed. Methods for making planar double injection field effect transistors having a plurality of deposited noncrystalline semiconductor layers for clean interface formation between semiconductor layers are also disclosed.
A method of forming a thin film electronic device comprising the steps of: forming a conductive gate on an insulating substrate; forming an insulating layer over said gate; depositing a layer of substantially intrinsic noncrystalline semiconductor material over said insulating layer; forming a layer of etchable metal over said noncrystalline layer and patterning said metal, said metal being etchable by an etchant which does not readily adversely affect the electronic properties of said layer during etching; depositing a first layer of doped noncrystalline semiconductor material over said patterned metal layer; removing said metal layer by etching, and at the same time, removing that portion of said first doped layer which overlies said etchable metal layer.
Claim 2
Independent Claim
115 words
A method of forming a thin film electronic device comprising the steps of: forming a conductive gate on an insulating substrate; forming an insulating layer over said gate; depositing a layer of substantially intrinsic noncrystalline semiconductor material over said insulating layer; forming a layer of etchable metal over said noncrystalline layer and patterning said metal, said metal being etchable by an etchant which does not readily adversely affect the electronic properties of said layer during etching; depositing a first layer of doped noncrystalline semiconductor material over said patterned metal layer; removing said metal layer by etching, and at the same time, removing that portion of said first doped layer which overlies said etchable metal layer.
Claim 3
Dependent Claim
23 words
A method as defined in claim 1 further comprising the step of: depositing a second doped layer after removing said etchable metal layer.