US4879689A
Expired / Lapsed
US
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Nonvolatile semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1987-03-25
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Granted: 1989-11-07
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Expires: 2007-03-25
Abstract
Abstract A nonvolatile semiconductor memory device comprising a matrix array of memory cells, word lines for driving the rows of memory cells, bit lines for reading data from columns of memory cells, a plurality of first MOS transistors provided for these bit lines, respectively, a second MOS transistor having a source coupled to the bit lines by the first MOS transistors, a drain coupled to a VCC terminal, and a gate connected to receive a predetermined bias voltage, a row decoder for selecting one of the word lines in accordance with a row-address signal, and a column decoder for turning on one of the first MOS transistors in accordance with a column-address signal. The memory device further has a CE terminal for receiving a test-mode signal, an OE terminal for receiving first and second control signals, and a control circuit for detecting a test mode, thereby prohibiting the operation of the row decoder in response to the first control signal, and permitting the operation of the row decoder in response to the second control signal.
Inventors
- 👤 Shigeru Atsumi
- 👤 Sumio Tanaka
- 👤 Shinji Saito
- 👤 Nobauki Otsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:49
CPC Classifications
G; G11; G11C; G11C17/00; G11C29/00; G11C29/52; G11C16/00; G11C16/02; G11C16/06; G11C16/08; G11C16/22; G11C16/225; G11C16/32; G11C29/04; G11C29/08; G11C29/12; G11C29/46
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
223 words
A nonvolatile semiconductor memory device comprising: a memory cell array including a plurality of memory cells which are each formed of a nonvolatile transistor; a plurality of word lines each connected to the memory cells in the same row; a plurality of bit lines each connected to the memory cells in the same column; first selecting means connected to receive an address signal for selecting one of said word lines in accordance with said address signal and driving the memory cells connected to the selected word line; second selecting means connected to receive said address signal for selecting one of said bit lines in accordance with said address signal and supplying a predetermined voltage to the selected bit line; output means connected to said bit lines for supplying output data corresponding to the potential of the selected bit line; a control terminal for receiving a control signal of first and second levels; and control means coupled to said control terminal for generating a selection control signal prohibiting the selecting operation of said first selecting means in response to the control signal of said first level and permitting the selecting operation in response to the control signal of said second level, said second selecting means being capable of selecting said one of said bit lines at times when said selection control signal is generated.
Claim 2
Dependent Claim
223 words
A nonvolatile semiconductor memory device comprising: a memory cell array including a plurality of memory cells which are each formed of a nonvolatile transistor; a plurality of word lines each connected to the memory cells in the same row; a plurality of bit lines each connected to the memory cells in the same column; first selecting means connected to receive an address signal for selecting one of said word lines in accordance with said address signal and driving the memory cells connected to the selected word line; second selecting means connected to receive said address signal for selecting one of said bit lines in accordance with said address signal and supplying a predetermined voltage to the selected bit line; output means connected to said bit lines for supplying output data corresponding to the potential of the selected bit line; a control terminal for receiving a control signal of first and second levels; and control means coupled to said control terminal for generating a selection control signal prohibiting the selecting operation of said first selecting means in response to the control signal of said first level and permitting the selecting operation in response to the control signal of said second level, said second selecting means being capable of selecting said one of said bit lines at times when said selection control signal is generated.
Claim 3
Dependent Claim
55 words
A nonvolatile semiconductor memory device according to claim 1, wherein said control terminal is an output enable terminal which is kept at a potential of said first level for a predetermined period from the renewal of said address signal and changed from said first level to said second level when said predetermined period is elapsed.
Claim 4
Dependent Claim
49 words
A nonvolatile semiconductor memory device according to claim 2, wherein said output means includes a sense amplifier for detecting the potential of the selected bit line and an output buffer for supplying output data corresponding to the detected potential, in response to the control signal of said second level.
Claim 5
Dependent Claim
72 words
A nonvolatile semiconductor memory device to claim 3, further comprising a mode terminal for receiving a test mode signal, and wherein said control means includes means responsive to said test mode signal, for generating a selection control signal prohibiting the selecting operation of said first selecting means in response to the control signal of said first level and permitting said selecting operation in response to the control signal of said second level.
Claim 6
Dependent Claim
68 words
A nonvolatile semiconductor memory device according to claim 4, wherein said mode terminal is a chip enable terminal which is selectively set at a potential of one of first, second, and third levels, and said control means includes a detecting circuit for detecting a test mode when the potential of said chip enable terminal is changed from one of the first and second levels to the third level.
Claim 7
Dependent Claim
131 words
A nonvolatile semiconductor memory device according to claim 5, wherein said detecting circuit includes first and second p-channel MOS transistors, n-channel MOS transistor, and an inverter, the current path of said second p-channel MOS transistor is connected at one end to said chip enable terminal through the current path of said first p-channel MOS transistor, and at the other end to a ground terminal through the current path of said n-channel MOS transistor, the gate of said first p-channel MOS transistor is connected to the junction of said first and second p-channel MOS transistors, the gates of said second p-channel and n-channel MOS transistors are connected to a power source terminal, and the input terminal of said inverter is connected to the junction of said second p-channel and n-channel MOS transistors.
Claim 8
Dependent Claim
45 words
A nonvolatile semiconductor memory device according to claim 5, wherein said detecting circuit includes at least two inverters connected in series, the initial inverter having an input terminal connected to said chip enable terminal and a threshold voltage higher than that of the succeeding inverter.
Claim 9
Dependent Claim
32 words
A nonvolatile semiconductor memory device according to claim 1, wherein said first selecting means includes a row decoder for decoding a row address signal and an output signal of said control means.
Claim 10
Dependent Claim
48 words
A nonvolatile semiconductor memory device according to claim 8, further comprising a plurality of dummy memory cells each formed of a programmed nonvolatile transistor which is selected when the selecting operation of first selecting means is prohibited, and a dummy word line connected to said dummy memory cells.
Claim 11
Dependent Claim
53 words
A nonvolatile semiconductor memory device according to claim 9, wherein said second selecting means includes a plurality of switching means connected in series with a load between a power terminal and said bit lines, and a column decoder for turning on one of said switching means in accordance with a column address signal.
Claim 12
Dependent Claim
48 words
A nonvolatile semiconductor memory device according to claim 1, further comprising a plurality of dummy memory cells each formed of a programmed nonvolatile transistor which is selected when the selecting operation of first selecting means is prohibited, and a dummy word line connected to said dummy memory cells.
Claim 13
Dependent Claim
53 words
A nonvolatile semiconductor memory device according to claim 1, wherein said second selecting means includes a plurality of switching means connected in series with a load between a power terminal and said bit lines, and a column decoder for turning on one of said switching means in accordance with a column address signal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-06 | 1993-05-08 | 1993-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-06 | 1997-05-08 | 1997-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-06 | 2001-05-08 | 2001-11-07 | $7700.00 | Window Closed / Lapsed |