US4879586A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor component
Assignee: Telefunken Electronic GmbH
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Filing: 1986-11-05
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Granted: 1989-11-07
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Expires: 2006-11-05
Abstract
Abstract In a semiconductor component, in particular, a high-voltage transistor, with an oxygen doped or nitrogen doped silicon layer on the surface, a glass layer is provided between the doped silicon layer and the semi-conductor surface.
Inventors
- 👤 Doris Brostrom
- 👤 Lennart Ryman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S257/00; Y10S257/905; Y10S257/908
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
110 words
In a high-voltage transistor including a semiconductor body having emitter, base and collector zones, respective electrodes for said emitter, base and collector zones disposed on a surface of said semiconductor body, an oxygen or nitrogen doped silicon layer disposed on at least the portions of the surface of said semiconductor body between said electrodes, and a glass layer provided between said doped silicon layer and said surface of said semiconductor body, the improvement wherein the portion of said doped silicon layer disposed between said base and collector electrodes is connected at one of its ends to said base electrode and is connected at its other end to said collector electrode.
Claim 2
Dependent Claim
110 words
In a high-voltage transistor including a semiconductor body having emitter, base and collector zones, respective electrodes for said emitter, base and collector zones disposed on a surface of said semiconductor body, an oxygen or nitrogen doped silicon layer disposed on at least the portions of the surface of said semiconductor body between said electrodes, and a glass layer provided between said doped silicon layer and said surface of said semiconductor body, the improvement wherein the portion of said doped silicon layer disposed between said base and collector electrodes is connected at one of its ends to said base electrode and is connected at its other end to said collector electrode.
Claim 3
Dependent Claim
14 words
A transistor as defined in claim 1, wherein said doped silicon layer is polycrystalline.
Claim 4
Dependent Claim
35 words
A transistor as defined in claim 1, wherein the glass layer disposed on said portion of said surface of said semi-conductor body between said base and collector electrodes consists of a commercially available passivation glass.
Claim 5
Dependent Claim
17 words
A transistor as defined in claim 1, wherein the doped silicon layer is connected to different potentials.
Claim 6
Dependent Claim
27 words
A transistor as defined in claim 1 wherein the base-collector pn-junction of said transistor extends to said portion of said surface between said base and collector electrodes.
Claim 7
Dependent Claim
18 words
A transistor as defined in claim 1 wherein a portion of said glass layer is formed of quartz-glass.
Claim 8
Dependent Claim
108 words
In a high voltage transistor including a semiconductor body having emitter zone, a base zone and a collector zone, and with the emitter-base and base-collector pn-junctions extending to the surface of said semiconductor body, a glass passivation layer covering said surface of said semiconductor body except for respective openings for respective electrodes for contacting said emitter , base and collector zones, a polycrystalline silicon layer doped with oxygen or nitrogen covering said passivation layer, and respective emitter, base and collector electrodes disposed in said openings; the improvement wherein said polycrystalline silicon layer is of weak conductivity and is connected to said base electrode and to said collector electrode.
Claim 9
Dependent Claim
108 words
In a high voltage transistor including a semiconductor body having emitter zone, a base zone and a collector zone, and with the emitter-base and base-collector pn-junctions extending to the surface of said semiconductor body, a glass passivation layer covering said surface of said semiconductor body except for respective openings for respective electrodes for contacting said emitter , base and collector zones, a polycrystalline silicon layer doped with oxygen or nitrogen covering said passivation layer, and respective emitter, base and collector electrodes disposed in said openings; the improvement wherein said polycrystalline silicon layer is of weak conductivity and is connected to said base electrode and to said collector electrode.
Claim 10
Dependent Claim
35 words
A trnsistor as defined in claim 7 wherein the portion of said glass passivation layer disposed on said surface of said semiconductor body between said base and collector electrodes comprises a commercially available passivation glass.
Claim 11
Dependent Claim
17 words
A transistor as defined in claim 8 wherein said commercially available passivation glass is a lead-boron-alumosilicate glass.
Claim 12
Dependent Claim
21 words
A transistor as defined in claim 7 wherein at least a portion of said glass passivation layer is formed of quartz-glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-06 | 1993-05-08 | 1993-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-06 | 1997-05-08 | 1997-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-06 | 2001-05-08 | 2001-11-07 | $7700.00 | Window Closed / Lapsed |