Abstract The present invention is a CMOS process for forming an N-channel device and a P-channel device on a doped substrate wherein an active region surrounded by field for the N-channel device is delineated to comprise a thin layer of oxide, a layer of nitride and a further layer of oxide. An active region surrounded by field for the P-channel device is delineated to comprise a thin layer of oxide and a layer of nitride. A well beneath the P-channel active region and the surrounding field region therefor is implanted. Then, the N-channel field is implanted. The oxide layer is removed from the N-channel active region and field oxide is grown for both channels while the well implant and the field implant are concurrently driven-in. The nitride layers are removed, and sacrificial oxide is grown and removed. Implanting is carried out for threshold adjust. The gate oxide is grown, and the gate electrodes of doped polysilicon are delineated for each channel. An activated source and drain is established for each channel. The crossover oxide is deposited, and metal contacts are established to each source and drain and to the gate polysilicon through the crossover oxide.
A CMOS device comprising, in combination: a P doped substrate; an N-channel transistor having an active region in the substrate surrounded by field oxide over the P doped substrate and in the P doped substrate; a P diffused field region in the substrate beneath at least a portion of the field oxide contiguous with the active region; an N+ source and drain in the active region and a doped polysilicon gate over insulation between the source and drain; insulated electrical connections to each of the source, drain and gate; said field oxide underlying the active region for no greater distance than 0.225 microns at any point around the active region and the field oxide exhibiting an abrupt transition from the active region to the field region characterized by a slope of approximately 3.8; a P-channel transistor having an active region in the substrate surrounded by field oxide; an N-diffused well under the P-channel transistor; a P+ source and drain in the P-channel active region and a doped polysilicon gate between the source and drain; insulated electrical connections to each of the P-channel transistor source, drain and gate; and, said field oxide underlying the P transistor active for no greater distance than 0.225 microns at any point around said last mentioned active region and said field oxide exhibiting an abrupt transition from the P-channel transistor active region to the P-channel section field region characterized by a slope of approximately 3.8.
Claim 2
Dependent Claim
239 words
A CMOS device comprising, in combination: a P doped substrate; an N-channel transistor having an active region in the substrate surrounded by field oxide over the P doped substrate and in the P doped substrate; a P diffused field region in the substrate beneath at least a portion of the field oxide contiguous with the active region; an N+ source and drain in the active region and a doped polysilicon gate over insulation between the source and drain; insulated electrical connections to each of the source, drain and gate; said field oxide underlying the active region for no greater distance than 0.225 microns at any point around the active region and the field oxide exhibiting an abrupt transition from the active region to the field region characterized by a slope of approximately 3.8; a P-channel transistor having an active region in the substrate surrounded by field oxide; an N-diffused well under the P-channel transistor; a P+ source and drain in the P-channel active region and a doped polysilicon gate between the source and drain; insulated electrical connections to each of the P-channel transistor source, drain and gate; and, said field oxide underlying the P transistor active for no greater distance than 0.225 microns at any point around said last mentioned active region and said field oxide exhibiting an abrupt transition from the P-channel transistor active region to the P-channel section field region characterized by a slope of approximately 3.8.
Claim 3
Dependent Claim
42 words
The device of claim 1, wherein: a plurality of said devices are deployed on a common substrate with the N and P channel active regions juxtaposed closer than in conventional CMOS devices so that layout density is increased due to minimized birdsbeak.
Claim 4
Dependent Claim
52 words
The devices of claim 2, wherein: the substrate under the field oxide regions adjacent to the N-channel active region is implanted at 70 Kev with boron ions at a dose of approximately 3×10 13 ions/cm 2 whereby, latch up immunity is enhanced due to the diffused field region enabling reduced field resistance.