Semiconductor radiation detector

Claim 2

A semiconductor radiation detector, comprising: a p-n junction; a substrate layer provided adjacent to a depletion layer formed at said p-n junction and having a radiation absorbing layer of a silicon equivalent thickness not smaller than 140 μm; and a channel stopper provided in the surface of said substrate layer and surrounding said p-n junction, to prevent said depletion layer from spreading along the surface of said substrate layer.

Claim 3

A semiconductor radiation detector according to claim 1, wherein said substrate layer includes silicon.

Claim 4

A semiconductor radiation detector according to claim 1, wherein said radiation absorbing layer has a silicon equivalent thickness in a range of 140 to 800 μm.

Claim 5

A semiconductor radiation detector according to claim 3, wherein said substrate layer includes silicon.

Claim 6

A semiconductor radiation detector according to claim 1, wherein said channel stopper surrounds said p-n junction without contacting said p-n junction.

Claim 7

A semiconductor radiation detector according to claim 5, wherein said channel stopper is at least 200 μm in width.

Claim 8

A semiconductor radiation detector, comprising: a first electrode; a pair of high resistance semiconductor regions of one conductivity type formed with said electrode being sandwiched therebetween; a pair of semiconductor regions of the other conductivity type each formed in each of said high resistance semiconductor regions; second electrodes formed, respectively, on said semiconductor regions of said other conductivity type; radiation absorbing regions each provided between each of depletion layers formed, respectively, at junctions between said high resistance semiconductor regions and said other conductivity type semiconductor regions, respectively, and each having a silicon equivalent thickness not smaller than 140 μm; and a pair of channel stoppers provided in respective surfaces of said high resistance semiconductor regions and surrounding respective junctions, to prevent said depletion layers from spreading along the surfaces of said high resistance semiconductor regions.

Claim 9

A semiconductor radiation detector, comprising: a first electrode; a pair of high resistance semiconductor regions of one conductivity type formed with said electrode being sandwiched therebetween; a pair of semiconductor regions of the other conductivity type each formed in each of said high resistance semiconductor regions; second electrodes formed, respectively, on said semiconductor regions of said other conductivity type; radiation absorbing regions each provided between each of depletion layers formed, respectively, at junctions between said high resistance semiconductor regions and said other conductivity type semiconductor regions, respectively, and each having a silicon equivalent thickness not smaller than 140 μm; and a pair of channel stoppers provided in respective surfaces of said high resistance semiconductor regions and surrounding respective junctions, to prevent said depletion layers from spreading along the surfaces of said high resistance semiconductor regions.

Claim 10

A semiconductor radiation detector according to claim 7, wherein said radiation absorbing region includes silicon.

Claim 11

A semiconductor radiation detector according to claim 7, wherein said radiation absorbing region has a silicon equivalent in a range of 140 to 800 μm.

Claim 12

A semiconductor radiation detector according to claim 7, wherein each of said pair of channel stoppers surrounds said respective junctions without contacting said respective junctions.

Claim 13

A semiconductor radiation detector according to claim 10, wherein each of said pair of channel stoppers is at least 200 μm in width.

Claim 14

A semiconductor radiation detector, comprising: a spherical high resistance semiconductor region of one conductivity type; a first electrode provided at a center portion of said spherical semiconductor region; at least two semiconductor regions formed in said spherical semiconductor region and each having the other conductivity type; second electrodes provided, respectively, on said other conductivity type semiconductor regions; wherein distance between said first electrode and an end of each depletion layer formed at each junction between said spherical semiconductor region and each of said other conductivity type semiconductor regions is selected equal to a silicon equivalent thickness not smaller than 140 μm for a radiation absorbing layer; and a channel stopper provided in the surface of said spherical semiconductor region and surrounding each of said other conductivity type semiconductor regions, to prevent each depletion layer from spreading along the surface of said spherical semiconductor region.

Claim 15

A semiconductor radiation detector, comprising: a spherical high resistance semiconductor region of one conductivity type; a first electrode provided at a center portion of said spherical semiconductor region; at least two semiconductor regions formed in said spherical semiconductor region and each having the other conductivity type; second electrodes provided, respectively, on said other conductivity type semiconductor regions; wherein distance between said first electrode and an end of each depletion layer formed at each junction between said spherical semiconductor region and each of said other conductivity type semiconductor regions is selected equal to a silicon equivalent thickness not smaller than 140 μm for a radiation absorbing layer; and a channel stopper provided in the surface of said spherical semiconductor region and surrounding each of said other conductivity type semiconductor regions, to prevent each depletion layer from spreading along the surface of said spherical semiconductor region.

Claim 16

A semiconductor radiation detector, comprising: a high resistance semiconductor region of one conductivity type; and a region of the other conductivity type formed in said high resistance semiconductor region through diffusion process; wherein a reverse bias voltage to be applied across a junction between said high resistance semi-conductor region and said other conductivity type region upon operation of said detector is set so that a region located between an end of a depletion layer formed in said high resistance semiconductor region along said junction and an electrode provided on said high resistance semiconductor region constitutes a region including a radiation absorbing layer having a silicon equivalent thickness not smaller than 140 μm; and a channel stopper provided in the surface of said high resistance semiconductor region and surrounding said other conductivity type region, to prevent said depletion layer from spreading along the surface of said high resistance semiconductor region.

Claim 17

A semiconductor radiation detector, comprising: a high resistance semiconductor region of one conductivity type; and a region of the other conductivity type formed in said high resistance semiconductor region through diffusion process; wherein a reverse bias voltage to be applied across a junction between said high resistance semi-conductor region and said other conductivity type region upon operation of said detector is set so that a region located between an end of a depletion layer formed in said high resistance semiconductor region along said junction and an electrode provided on said high resistance semiconductor region constitutes a region including a radiation absorbing layer having a silicon equivalent thickness not smaller than 140 μm; and a channel stopper provided in the surface of said high resistance semiconductor region and surrounding said other conductivity type region, to prevent said depletion layer from spreading along the surface of said high resistance semiconductor region.