Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
151 words
A transfer circuit for controlling a signal transfer between a first signal line and a second signal line in response to a control signal comprising: a first MIS transistor including a first electrode connected to the first signal line, a second electrode, and a gate electrode; a second MIS transistor including a first electrode connected to the second electrode of the first MIS transistor, a second electrode connected to the second signal line, and a gate electrode; and a bipolar transistor including a base electrode connected to the first signal line, a first electrode connected to a power supply line, and a second electrode connected to the first electrode of the second MIS transistor; the gate electrodes of the first MIS transistor and the second MIS transistor being controlled in response to the control signal such that the first MIS transistor and the second MIS transistor operate in a complementary manner.
Claim 2
Dependent Claim
151 words
A transfer circuit for controlling a signal transfer between a first signal line and a second signal line in response to a control signal comprising: a first MIS transistor including a first electrode connected to the first signal line, a second electrode, and a gate electrode; a second MIS transistor including a first electrode connected to the second electrode of the first MIS transistor, a second electrode connected to the second signal line, and a gate electrode; and a bipolar transistor including a base electrode connected to the first signal line, a first electrode connected to a power supply line, and a second electrode connected to the first electrode of the second MIS transistor; the gate electrodes of the first MIS transistor and the second MIS transistor being controlled in response to the control signal such that the first MIS transistor and the second MIS transistor operate in a complementary manner.
Claim 3
Dependent Claim
18 words
A transfer circuit as set forth in claim 1, wherein the bipolar transistor is an NPN type transistor.
Claim 4
Dependent Claim
31 words
A transfer circuit as set forth in claim 1, wherein the first MIS transistor is an n channel type transistor and the second MIS transistor is a p channel type transistor.
Claim 5
Dependent Claim
31 words
A transfer circuit as set forth in claim 1, wherein the first MIS transistor is a p channel type transistor and the second MIS transistor is an n channel type transistor.
Claim 6
Dependent Claim
24 words
A transfer circuit as set forth in claim 1, wherein the first MIS transistor and the second MIS transistor are n channel type transistors.
Claim 7
Dependent Claim
24 words
A transfer circuit as set forth in claim 1, wherein the first MIS transistor and the second MIS transistor are p channel type transistors.
Claim 8
Dependent Claim
20 words
A transfer circuit as set forth in claim 1, further comprising a pull-down circuit connected to the second signal line.
Claim 9
Dependent Claim
64 words
A transfer circuit as set forth in claim 7, wherein the pull-down circuit comprises an MIS transistor having a drain connected to the second line, a source connected to the ground, and a gate to which is supplied a voltage at a level such that the MIS transistor has a higher resistance value than that of the second MIS transistor in the conductive state.
Claim 10
Dependent Claim
139 words
A transfer circuit as set forth in claim 1, further comprising: a third MIS transistor including a first electrode connected to a third signal line, a second electrode, and a gate electrode connected to the gate electrode of the first MIS transistor; a fourth MIS transistor including a first electrode connected to the second electrode of the third MIS transistor, a second electrode connected to a fourth signal line, and a gate electrode connected to the gate electrode of the second MIS transistor; and another bipolar transistor including a base electrode connected to the third signal line, a first electrode connected to the power supply line, and a second electrode connected to the first electrode of the fourth MIS transistor; whereby, complementary signals are transferred between the first and third signal lines and the second and fourth signal lines.