Process for forming metallic patterned film

Claim 2

A process for forming a new wiring path on a semiconductor device, comprising: providing a semiconductor device having a designated area on which a new wiring path is to be formed; forming a layer of decomposable carbonyl metal compound composed of carbonyl and metal components on the designated area of the semiconductor device by directing a vapor stream of decomposable carbonyl metal compound onto the designated area; and converting the layer of decomposable carbonyl metal compound into a new wiring path on the designated area of the semiconductor device by irradiating the layer with a focused ion beam to decompose the carbonyl metal compound layer into a gaseous carbonyl component which dissipates and a solid metal component which deposits as the new wiring path on the semiconductor device.

Claim 3

A process according to claim 1; wherein the decomposable carbonyl metal compound comprises a hexacarbonyl metal compound.

Claim 4

A process according to claim 1; wherein the decomposable carbonyl metal compound has a metal component selected from the group consisting of W, Mo and Cr.

Claim 5

A process according to claim 1; wherein the focused ion beam is composed of ions selected from the group consisting of Ga ions, Au ions, Bi ions and Pb ions.

Claim 6

A process according to claim 1; including cooling the semiconductor device prior to irradiation by the focused ion beam to promote the formation of the layer of carbonyl metal compound.

Claim 7

A process for forming a new wiring route on a semiconductor device by using an apparatus which has an ion beam generator comprised of a metal ion source for generating an ion beam, a focusing lens system to focus the ion beam from the metal ion source, a blanking electrode to turn on and off the ion beam, a deflecting electrode to deflect the focused ion beam for scanning the same, an X-Y stage movable in the X-Y directions for mounting thereon a semiconductor device to be irradiated with the focused ion beam, a gas gun to direct a hexacarbonyl metal gas stream against the surface of the semiconductor device where the focused ion beam is irradiated, a gas source to supply hexacarbonyl metal gas to the gas gun, and a detector for detecting secondary charged particles which are generated by the irradiation of the semiconductor device with the focused ion beam, the process comprising the steps of: directing a vapor stream of hexacarbonyl metal toward a predetermined surface portion of the semiconductor device at which a new wiring route is to be formed; and irradiating the predetermined surface portion on which the hexacarbonyl metal is adsorbed with a focused ion beam to thereby decompose the hexacarbonyl metal to deposit a new wiring route on the predetermined surface portion of the semiconductor device.

Claim 8

A process for forming a new wiring route on a semiconductor device by using an apparatus which has an ion beam generator comprised of a metal ion source for generating an ion beam, a focusing lens system to focus the ion beam from the metal ion source, a blanking electrode to turn on and off the ion beam, a deflecting electrode to deflect the focused ion beam for scanning the same, an X-Y stage movable in the X-Y directions for mounting thereon a semiconductor device to be irradiated with the focused ion beam, a gas gun to direct a hexacarbonyl metal gas stream against the surface of the semiconductor device where the focused ion beam is irradiated, a gas source to supply hexacarbonyl metal gas to the gas gun, and a detector for detecting secondary charged particles which are generated by the irradiation of the semiconductor device with the focused ion beam, the process comprising the steps of: directing a vapor stream of hexacarbonyl metal toward a predetermined surface portion of the semiconductor device at which a new wiring route is to be formed; and irradiating the predetermined surface portion on which the hexacarbonyl metal is adsorbed with a focused ion beam to thereby decompose the hexacarbonyl metal to deposit a new wiring route on the predetermined surface portion of the semiconductor device.

Claim 9

A process as claimed in claim 6; wherein the focused ion beam is composed of Ga ions, Au ions, Bi ions or Pb ions.

Claim 10

A process as claimed in claim 6; wherein the hexacarbonyl metal comprises W(CO) 6 , Mo(CO) 6 or Cr(CO) 6 .

Claim 11

A process for forming a new wiring path on a semiconductor device, comprising the steps of: providing a semiconductor device; designating an area of the semiconductor device on which a new wiring path is to be formed; forming a vapor stream of a decomposable carbonyl metal compound composed of a carbonyl component and a metal component; directing the vapor stream toward the designated area of the semiconductor device to form thereon a layer of the decomposable carbonyl metal compound; and irradiating the layer with an ion beam to decompose the carbonyl metal compound into a gaseous carbonyl component and a solid metal component to thereby deposit the solid metal component as a new wiring path on the designated area of the semiconductor device.

Claim 12

A process for forming a new wiring path on a semiconductor device, comprising the steps of: providing a semiconductor device; designating an area of the semiconductor device on which a new wiring path is to be formed; forming a vapor stream of a decomposable carbonyl metal compound composed of a carbonyl component and a metal component; directing the vapor stream toward the designated area of the semiconductor device to form thereon a layer of the decomposable carbonyl metal compound; and irradiating the layer with an ion beam to decompose the carbonyl metal compound into a gaseous carbonyl component and a solid metal component to thereby deposit the solid metal component as a new wiring path on the designated area of the semiconductor device.

Claim 13

A process according to claim 9; wherein the decomposable carbonyl metal compound comprises a hexacarbonyl metal.

Claim 14

A process according to claim 10; wherein the decomposable carbonyl metal compound is composed of a metal component selected from the group consisting of W, Mo and Cr.

Claim 15

A process according to claim 9; wherein the ion beam is comprised of ion particles of a metal.

Claim 16

A process according to claim 11; wherein the metal is selected from the group consisting of Ga, Au, Bi and Pb.

Claim 17

A process according to claim 9; including the step of cooling the semiconductor device below room temperature to promote adsorption of the carbonyl metal compound on the designated area thereof to thereby promote the formation of the layer of carbonyl metal compound.

Claim 20

A method according to claim 15; wherein the mounting step comprises mounting the semiconductor device displaceably in X and Y directions perpendicular to the direction of irradiation of the ion beam.

Claim 21

A method according to claim 15; wherein the supplying step comprises supplying a vapor of a decomposable hexacarbonyl metal.

Claim 22

A method according to claim 17; wherein the decomposable hexacarbonyl metal is selected from the group consisting of W(CO) 6 , Mo(CO) 6 and Cr(CO) 6 .

Claim 23

A method according to claim 15; including the step of supplying ion particles of a metal to the irradiating means to enable the same to irradiate the designated area of the semiconductor device with a metal ion beam.

Claim 24

A method according to claim 19; wherein the metal is selected from the group consisting of Ga, Au, Bi and Pb.

Claim 25

A method according to claim 15; wherein the second operating step includes scanning the focused ion beam within the designated area of the semiconductor device so as to control the thickness of the deposited new wiring path.

Claim 26

A method according to claim 15; including the step of cooling the semiconductor device below room temperature to promote adsorption of the carbonyl metal compound on the designated area thereof to thereby promote the formation of the layer of carbonyl metal compound.