§
Luxuse
Patent Intelligence
Sign In
Patent US4875131A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4875131A Expired / Lapsed US ⏱️ 0.0 years remaining

Circuit configuration for monitoring a semiconductor structural element and providing a signal when the temperature exceeds a predetermined level

Assignee: Siemens AG
•
Filing: 1989-04-25
•
Granted: 1989-10-17
•
Expires: 2009-04-25
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A circuit for monitoring the temperature of a semiconductor structural component. The circuit includes a bipolar transistor (1) in thermal contact with a semiconductor structural element to be monitored, and a MOSFET (11) connected in series with a current source (12). The MOSFET (11) is maintained in a nonconducting state with two Zener diodes (13, 14) if the bipolar transistor (1) is the standard operating temperature of the semiconductor structural element. This circuit provides for a reduced zero current signal. The current flowing through the bipolar transistor (1) increases with temperature and the gate-source voltage of the MOSFET (11) is increases until it switches off. If the current flowing through the MOSFET (11) is greater than the impressed current of the current source (12) the potential across the current source takes a step increase a value near the supply voltage (V DD ). This voltage step can then be detected as an excess-temperature signal.

Inventors

  • 👤 Ludwig Leipold
  • 👤 Rainald Sander
  • 👤 Jenoe Tihanyi
  • 👤 Roland Weber

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 14:33
CPC Classifications
H; H02; H02H; H02H5/00; H02H5/04; H02H5/044; G; G01; G01K; G01K7/00; G01K7/01

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 137 words
A circuit for monitoring the temperature of a semiconductor structural element and providing a signal when the temperature exceeds a preset limit, the circuit includes a bipolar transistor connected thermally to the semiconductor structural element, and a first current source connected in series to the bipolar transistor, the improvement comprising: a MOSFET, wherein the source of the mosfet is coupled to the emitter of the bipolar transistor and the drain of the MOSFET is coupled to the current source; a Zener diode for maintaining the gate of the MOSFET at a first potential; and a second Zener diode for maintaining the source of the MOSFET at a second potential, the difference between the first potential and the second potential at the operating temperature of the semiconductor structural element being smaller that the threshold voltage of the MOSFET.
Claim 2
Dependent Claim 137 words
A circuit for monitoring the temperature of a semiconductor structural element and providing a signal when the temperature exceeds a preset limit, the circuit includes a bipolar transistor connected thermally to the semiconductor structural element, and a first current source connected in series to the bipolar transistor, the improvement comprising: a MOSFET, wherein the source of the mosfet is coupled to the emitter of the bipolar transistor and the drain of the MOSFET is coupled to the current source; a Zener diode for maintaining the gate of the MOSFET at a first potential; and a second Zener diode for maintaining the source of the MOSFET at a second potential, the difference between the first potential and the second potential at the operating temperature of the semiconductor structural element being smaller that the threshold voltage of the MOSFET.
Claim 3
Dependent Claim 40 words
The circuit of claim 1, further comprising: a first resistor coupled in series with and to the anode of the first Zener diode; and a second resistor coupled in series with and to the anode of the second Zener diode.
Claim 4
Dependent Claim 42 words
The circuit of claim 1, further comprising: a second current source coupled in series with and to the anode of the first Zener diode; and a third current source coupled in series with and to the anode of the second Zener diode.
Claim 5
Dependent Claim 28 words
The circuit of claim 1, wherein the cathodes of the Zener diodes are coupled to the collector of the bipolar transistor and the Zener voltages are the same.
Claim 6
Dependent Claim 23 words
The circuit of claim 1, 2, 3, or 4, wherein a resistor is coupled to the base and emitter of the bipolar transistor.
Claim 7
Dependent Claim 23 words
The circuit of claim 1, 2, 3, or 4, wherein a capacitor is coupled to the base and emitter of the bipolar transistor.

References Cited (Backward Citations)

US4220873A Cited
US4355344A Cited
US4652144A Cited
US4667265A Cited
US4730228A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-10-16 1993-04-17 1993-10-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-10-16 1997-04-17 1997-10-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-10-16 2001-04-17 2001-10-17 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag