Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
88 words
A Distributed-Bragg-Reflector semiconductor laser comprising: (a) a nipinipi . . . gain-producing active section comprised of a plurality of gain segments disposed at periodic intervals with respect to the wavelength of an intended operating frequency of the laser; (b) a pair of Distributed-Bragg-Reflector stacks disposed at the respective ends of said nipinipi . . . active section; and, (c) electrode means operably connected to said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section.
Claim 2
Dependent Claim
88 words
A Distributed-Bragg-Reflector semiconductor laser comprising: (a) a nipinipi . . . gain-producing active section comprised of a plurality of gain segments disposed at periodic intervals with respect to the wavelength of an intended operating frequency of the laser; (b) a pair of Distributed-Bragg-Reflector stacks disposed at the respective ends of said nipinipi . . . active section; and, (c) electrode means operably connected to said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section.
Claim 3
Dependent Claim
47 words
The Distributed-Bragg-Reflector semiconductor laser of claim 1 wherein: said electrode means comprises a pair of electrodes formed on either side of said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section in parallel.
Claim 4
Dependent Claim
34 words
The Distributed-Bragg-Reflector semiconductor laser of claim 2 wherein: (a) one of said pair of electrode means is a n+Si-diffused electrode; and, (b) the other of said pair of electrode means is a p+Zn-diffused electrode.
Claim 5
Dependent Claim
34 words
The Distributed-Bragg-Reflector semiconductor laser of claim 2 wherein: said pair of Distributed-Bragg-Reflector stacks are each quarterwave mirror stacks providing optimum feedback of light at the wavelength of said intended operating frequency of the laser.
Claim 6
Dependent Claim
53 words
The Distributed-Bragg-Reflector semiconductor laser of claim 1 and additionally comprising: (a) a substrate having said nipinipi . . . active section and said stacks mounted thereon; wherein, (b) said nipinipi . . . active section is stacked vertically with respect to the surface of said substrate whereby the laser is a surface-normal laser.
Claim 7
Dependent Claim
36 words
The Distributed-Bragg-Reflector semiconductor laser of claim 1 wherein: said nipinipi . . . active section has interfaces between p+ and n+ sections thereof positioned at standing wave maxima of said intended operating frequency of the laser.
Claim 8
Dependent Claim
75 words
The Distributed-Bragg-Reflector semiconductor laser of claim 1 wherein: said nipinipi . . . active section has interfaces between p+ and n+ sections thereof displaced from standing wave maxima of said intended operating frequency of the laser an amount which will allow the impedance discontinuity of the said active segment to result in more in-phase reflection components whereby said gain-producing active section acts as a mirror and the net effective reflectivity of the laser is increased.
Claim 9
Dependent Claim
110 words
A surface-normal cavity, Distributed-Bragg-Reflector laser comprising: (a) a substrate; (b) a nipinipi . . . gain-producing active section comprised of a plurality of gain segments disposed at periodic intervals with respect to the wavelength of an intended operating frequency of the laser, said nipinipi . . . active section being stacked vertically with respect to the surface of said substrate; (c) a pair of Distributed-Bragg-Reflector stacks disposed at the respective ends of said nipinipi . . . active section; and, (d) electrode means operably connected to said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section.
Claim 10
Dependent Claim
110 words
A surface-normal cavity, Distributed-Bragg-Reflector laser comprising: (a) a substrate; (b) a nipinipi . . . gain-producing active section comprised of a plurality of gain segments disposed at periodic intervals with respect to the wavelength of an intended operating frequency of the laser, said nipinipi . . . active section being stacked vertically with respect to the surface of said substrate; (c) a pair of Distributed-Bragg-Reflector stacks disposed at the respective ends of said nipinipi . . . active section; and, (d) electrode means operably connected to said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section.
Claim 11
Dependent Claim
20 words
The surface-normal cavity, Distributed-Bragg-Reflector laser of claim 8 wherein: the laser is an AlGaAs laser and said substrate is GaAs.
Claim 12
Dependent Claim
49 words
The surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 8 wherein: said electrode means comprises a pair of electrodes formed on either side of said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section in parallel.
Claim 13
Dependent Claim
36 words
The surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 10 wherein: (a) one of said pair of electrode means is a n+Si-diffused electrode; and, (b) the other of said pair of electrode means is a p+Zn-diffused electrode.
Claim 14
Dependent Claim
36 words
The surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 8 wherein: said pair of Distributed-Bragg-Reflector stacks are each quarter-wave mirror stacks providing optimum feedback of light at the wavelength of said intended operating frequency of the laser.
Claim 15
Dependent Claim
38 words
The surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 8 wherein: said nipinipi . . . active section has interfaces between p+ and n+ sections thereof positioned at standing wave maxima of said intended operating frequency of the laser.
Claim 16
Dependent Claim
77 words
The Surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 8 wherein: said nipinipi . . . active section has interfaces between p+ and n+ sections thereof displaced from standing wave maxima of said intended operating frequency of the laser an amount which will allow the impedance discontinuity of the said active segment to result in more in-phase reflection components whereby said gain-producing active section acts as a mirror and the net effective reflectivity of the laser is increased.
Claim 17
Dependent Claim
125 words
A surface-normal cavity, AlGaAs, Distributed-Bragg-Reflector laser comprising: (a) a GaAs substrate; (b) a nipinipi . . . gain-producing active section comprised of a plurality of gain segments disposed at periodic intervals with respect to the wavelength of an intended operating frequency of the laser, said nipinipi . . . active section being stacked vertically with respect to the surface of said substrate; (c) a pair of Distributed-Bragg-Reflector stacks disposed at the respective ends of said nipinipi . . . active section; and, (d) electrode means comprising a pair of electrodes formed on either side of and operably connected to said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section in parallel.
Claim 18
Dependent Claim
125 words
A surface-normal cavity, AlGaAs, Distributed-Bragg-Reflector laser comprising: (a) a GaAs substrate; (b) a nipinipi . . . gain-producing active section comprised of a plurality of gain segments disposed at periodic intervals with respect to the wavelength of an intended operating frequency of the laser, said nipinipi . . . active section being stacked vertically with respect to the surface of said substrate; (c) a pair of Distributed-Bragg-Reflector stacks disposed at the respective ends of said nipinipi . . . active section; and, (d) electrode means comprising a pair of electrodes formed on either side of and operably connected to said nipinipi . . . active section in electrical contact therewith for applying a driving current to said nipinipi . . . active section in parallel.
Claim 19
Dependent Claim
36 words
The surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 15 wherein: (a) one of said pair of electrode means is a n+Si-diffused electrode; and, (b) the other of said pair of electrode means is a p+Zn-diffused electrode.
Claim 20
Dependent Claim
36 words
The surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 15 wherein: said pair of Distributed-Bragg-Reflector stacks are each quarterwave mirror stacks providing optimum feedback of light at the wavelength of said intended operating frequency of the laser.
Claim 21
Dependent Claim
38 words
The surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 15 wherein: said nipinipi . . . active section has interfaces between p+ and n+ sections thereof positioned at standing wave maxima of said intended operating frequency of the laser.
Claim 22
Dependent Claim
77 words
The Surface-normal cavity, Distributed-Bragg-Reflector semiconductor laser of claim 15 wherein: said nipinipi . . . active section has interfaces between p+ and n+ sections thereof displaced from standing wave maxima of said intended operating frequency of the laser an amount which will allow the impedance discontinuity of the said active segment to result in more in-phase reflection components whereby said gain-producing active section acts as a mirror and the net effective reflectivity of the laser is increased.