Patent US2421149A successfully refreshed from Google Patents.
US4873669A
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US
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Random access memory device operable in a normal mode and in a test mode
Assignee: Mitsubishi Electric Corp
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Filing: 1987-07-24
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Granted: 1989-10-10
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Expires: 2007-07-24
Abstract
Abstract A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switches are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected to one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.
Inventors
- 👤 Kiyohiro Furutani
- 👤 Koichiro Mashiko
- 👤 Kazutami Arimoto
- 👤 Noriaki Matsumoto
- 👤 Yoshio Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:08
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/10; G11C7/1051; G11C7/1057; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/18; G11C29/26; G11C29/38; G11C7/1006; G11C7/1078; G11C7/1084; G06; G06F; G06F11/00; G06F11/22; G06F11/26; G06F11/267
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
298 words
A semiconductor memory device operable for reading and writing in a normal mode and in a test mode comprising, two memory cell sections each having an identical number of blocks in the memory cell sections, data bus lines connected to respective ones of the blocks, switch means for interconnecting data bus lines connected to blocks of different ones of the memory cell sections comprising switches associated with each of the data bus lines connected to the plurality of memory cell sections, the switches being configured so as to connect each other to the data bus lines connected to each of the memory cell sections, switch control means for causing the switch means to be conductive during reading and writing in the normal mode and during writing in the test mode, and causing the switch means to be nonconductive during reading in the test mode, first output means connected to the data bus lines that are connected to the blocks of one of the memory cell sections for applying input data onto the data bus lines for writing in the blocks of the section simultaneously during writing in the normal mode and in the test mode, and for outputting the data read out of the blocks of the sections during reading in the normal mode, and for outputting the data read out of the blocks of said one of the sections during reading in the test mode, and second output means connected to the data bus lines that are connected to the blocks of at least one of the memory cell sections other than said one of the memory cell sections, for outputting the data read out of the memory cell blocks of the at least one of the memory cell sections during the reading in the test mode.
Claim 2
Dependent Claim
298 words
A semiconductor memory device operable for reading and writing in a normal mode and in a test mode comprising, two memory cell sections each having an identical number of blocks in the memory cell sections, data bus lines connected to respective ones of the blocks, switch means for interconnecting data bus lines connected to blocks of different ones of the memory cell sections comprising switches associated with each of the data bus lines connected to the plurality of memory cell sections, the switches being configured so as to connect each other to the data bus lines connected to each of the memory cell sections, switch control means for causing the switch means to be conductive during reading and writing in the normal mode and during writing in the test mode, and causing the switch means to be nonconductive during reading in the test mode, first output means connected to the data bus lines that are connected to the blocks of one of the memory cell sections for applying input data onto the data bus lines for writing in the blocks of the section simultaneously during writing in the normal mode and in the test mode, and for outputting the data read out of the blocks of the sections during reading in the normal mode, and for outputting the data read out of the blocks of said one of the sections during reading in the test mode, and second output means connected to the data bus lines that are connected to the blocks of at least one of the memory cell sections other than said one of the memory cell sections, for outputting the data read out of the memory cell blocks of the at least one of the memory cell sections during the reading in the test mode.
Claim 3
Dependent Claim
73 words
A device according to claim 1, wherein there are four blocks of memory cells in each section, and four pairs of data lines respectively connected to the four blocks, and the switch means comprises four pairs of switches interconnecting the four pairs of data lines that are connected to the blocks of one of the sections and the four pairs of data lines that are connected to the blocks of the other sections.
Claim 4
Dependent Claim
35 words
A device according to claim 1, wherein the layout of the data bus lines on the chip surface is such that the data bus lines interconnected by the switch means are disposed along common lines.
Claim 5
Dependent Claim
27 words
A device according to claim 3, wherein the data bus lines connected to the same section are disposed in parallel with each other on the chip surface.
Claim 6
Dependent Claim
31 words
A device according to claim 1, further comprising means for comparing, for the purpose of testing, the data output by said means connected to the data lines, in the test mode.
Claim 7
Dependent Claim
24 words
A device according to claim 1, further comprising decoder means for selecting one of the sections during reading and writing in the normal mode.
Claim 8
Dependent Claim
366 words
A semiconductor memory device operable for reading and writing in a normal mode and in a test mode comprising, two memory cell sections each having blocks of memory cells, wherein said two memory cell sections comprise first and second memory cell sections, data bus lines connected to respective ones of the blocks, switch means for interconnecting data bus lines connected to blocks of different ones of the memory cell sections, switch control means for causing the switch means to be conductive during reading and writing in the normal mode and during writing in the test mode, and causing the switch means to be nonconductive during reading in the test mode, first output means connected to the data bus lines that are connected to the blocks of one of the memory cell sections for applying input data onto the data bus lines for writing in the blocks of the section simultaneously during writing in the normal mode and in the test mode, and for outputting the data read out of the blocks of the sections during reading in the normal mode, and for outputting the data read out of the blocks of said one of the sections during reading in the test mode, first output means further comprises a plurality of preamplifier means, coupled with the data bus lines connected to the first memory cell section, for amplifying the data read out of the blocks of all the memory cell sections in the normal mode and amplifying the data read out of the blocks of said one of the memory cell sections in the test mode, and second output means connected to the data bus lines that are connected to the blocks of at least one of the memory cell sections other than said one of the memory cell sections, for outputting the data read out of the memory cell blocks of the at least one of the memory cell sections during the reading in the test mode, and said second output means further comprises a plurality of test preamplifier means coupled with the data bus lines connected to the second memory cell section for amplifying the data read out of the blocks of the second section.
Claim 9
Dependent Claim
366 words
A semiconductor memory device operable for reading and writing in a normal mode and in a test mode comprising, two memory cell sections each having blocks of memory cells, wherein said two memory cell sections comprise first and second memory cell sections, data bus lines connected to respective ones of the blocks, switch means for interconnecting data bus lines connected to blocks of different ones of the memory cell sections, switch control means for causing the switch means to be conductive during reading and writing in the normal mode and during writing in the test mode, and causing the switch means to be nonconductive during reading in the test mode, first output means connected to the data bus lines that are connected to the blocks of one of the memory cell sections for applying input data onto the data bus lines for writing in the blocks of the section simultaneously during writing in the normal mode and in the test mode, and for outputting the data read out of the blocks of the sections during reading in the normal mode, and for outputting the data read out of the blocks of said one of the sections during reading in the test mode, first output means further comprises a plurality of preamplifier means, coupled with the data bus lines connected to the first memory cell section, for amplifying the data read out of the blocks of all the memory cell sections in the normal mode and amplifying the data read out of the blocks of said one of the memory cell sections in the test mode, and second output means connected to the data bus lines that are connected to the blocks of at least one of the memory cell sections other than said one of the memory cell sections, for outputting the data read out of the memory cell blocks of the at least one of the memory cell sections during the reading in the test mode, and said second output means further comprises a plurality of test preamplifier means coupled with the data bus lines connected to the second memory cell section for amplifying the data read out of the blocks of the second section.
Claim 10
Dependent Claim
37 words
A device according to claim 7, further comprising means for receiving the outputs of the plurality of preamplifier means and the plurality of test preamplifier means and checking whether all of the outputs agree with each other.
Claim 11
Dependent Claim
25 words
A device according to claim 7, further comprising an address decoder for selecting one of the blocks during writing and reading in the normal mode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-09 | 1993-04-10 | 1993-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-09 | 1997-04-10 | 1997-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-09 | 2001-04-10 | 2001-10-10 | $7700.00 | Window Closed / Lapsed |