US4872174A
Expired / Lapsed
US
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Semiconductor laser device having a grating structure
Assignee: Sharp Corp
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Filing: 1988-09-01
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Granted: 1989-10-03
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Expires: 2008-09-01
Abstract
Abstract A semiconductor laser device comprises a laminated crystal structure which includes a Ga 1-y Al y As optical guiding layer and a Ga 1-z Al z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga 1-x Al 2 As (0≦x≦0.1 and x<y) layer and the optical guiding layer. The AlAs mole fraction y of the optical guiding layer is greater than 0.1.
Inventors
- 👤 Sadayoshi Matsui
- 👤 Mototaka Taneya
- 👤 Mitsuhiro Matsumoto
- 👤 Hiroyuki Hosoba
- 👤 Haruhisa Takiguchi
- 👤 Hiroaki Kudo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:47
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/10; H01S5/12; H01S5/125; H01S5/22; H01S5/223; H01S5/2232; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32316; H01S5/40; H01S5/4025; H01S5/4031
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
73 words
In a semiconductor laser device comprising a laminated crystal structure which includes a Ga 1-y Al y As optical guiding layer and a Ga 1-z Al z As (z>y) cladding layer in this sequence, the improvement exists in that said Ga 1-z Al z As (z>y) cladding layer is formed directly on both a Ga 1-x Al x As (0≦x≦0.1 and x<y) layer and said Ga 1-4 Al y As optical guiding layer.
Claim 2
Dependent Claim
73 words
In a semiconductor laser device comprising a laminated crystal structure which includes a Ga 1-y Al y As optical guiding layer and a Ga 1-z Al z As (z>y) cladding layer in this sequence, the improvement exists in that said Ga 1-z Al z As (z>y) cladding layer is formed directly on both a Ga 1-x Al x As (0≦x≦0.1 and x<y) layer and said Ga 1-4 Al y As optical guiding layer.
Claim 3
Dependent Claim
24 words
A semiconductor laser device according to claim 1, wherein a diffraction grating is formed on said Ga 1-y Al y As optical guiding layer.
Claim 4
Dependent Claim
25 words
A semiconductor layer device according to claim 1, wherein a diffraction grating is formed partially on said Ga 1-y Al y As optical guiding layer.
Claim 5
Dependent Claim
36 words
A semiconductor laser device according to claim 1, wherein said Ga 1-x Al x As layer is formed on at least one of the side portions of said Ga 1-y Al y As optical guiding layer.
Claim 6
Dependent Claim
35 words
A semiconductor laser device according to claim 1, wherein said Ga 1-x Al x As layer is formed at least one of the lateral sides of said Ga 1-y Al y As optical guiding layer.
Claim 7
Dependent Claim
52 words
A semiconductor laser device according to claim 1, wherein said Ga 1-y Al y As optical guiding layer is formed in a laminated semiconductor crystal structure formed on a Ga 1-x Al x As substrate, and said Ga 1-x Al x As substrate functions as said Ga 1-x Al x As layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-02 | 1993-04-03 | 1993-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-02 | 1997-04-03 | 1997-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-02 | 2001-04-03 | 2001-10-03 | $7700.00 | Window Closed / Lapsed |