Patent US4872046A successfully refreshed from Google Patents.
US4872046A
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Heterojunction semiconductor device with <001> tilt
Assignee: University of Illinois at Urbana-Champaign
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Filing: 1987-09-01
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Granted: 1989-10-03
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Expires: 2007-09-01
Abstract
Abstract A method is disclosed of epitaxially depositing a semiconductor material on a substrate of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a {100} crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.
Inventors
- 👤 Hadis Morkoc
- 👤 Russ Fischer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:29
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
53 words
A semiconductor device, comprising: a single crystalline substrate selected from the group consisting of silicon and germanium having a {100} crystallographic surface tilted in the <001>direction; at least one layer of III-V semiconductor material disposed over said surface; and a transistor device formed in said at least one layer of III-V semiconductor material.
Claim 2
Dependent Claim
53 words
A semiconductor device, comprising: a single crystalline substrate selected from the group consisting of silicon and germanium having a {100} crystallographic surface tilted in the <001>direction; at least one layer of III-V semiconductor material disposed over said surface; and a transistor device formed in said at least one layer of III-V semiconductor material.
Claim 3
Dependent Claim
29 words
The semiconductor device as defined by claim 1, wherein said substrate is silicon and said at least one layer of III-V semiconductor material includes a layer of gallium arsenide.
Claim 4
Dependent Claim
19 words
The semiconductor device as defined by claim 2, wherein the angle of the tilt is at least 2.29 degrees.
Claim 5
Dependent Claim
16 words
The semiconductor device as defined by claim 1, wherein said transistor device is a field-effect transistor.
Claim 6
Dependent Claim
16 words
The semiconductor device as defined by claim 2, wherein said transistor device is a field-effect transistor.
Claim 7
Dependent Claim
16 words
The semiconductor device as defined by claim 3, wherein said transistor device is a field-effect transistor.
Claim 8
Dependent Claim
16 words
The semiconductor device as defined by claim 1, wherein said transistor device is a bipolar transistor.
Claim 9
Dependent Claim
16 words
The semiconductor device as defined by claim 2, wherein said transistor device is a bipolar transistor.
Claim 10
Dependent Claim
16 words
The semiconductor device as defined by claim 3, wherein said transistor device is a bipolar transistor.
Claim 11
Dependent Claim
53 words
A semiconductor device, comprising: a single crystalline substrate selected from the group consisting of silicon and germanium having a crystallographic surface tilted in the <001> direction; at least one layer of III-V semiconductor material disposed over said surface; and a light-emitting device formed in said at least one layer of III-V semiconductor material.
Claim 12
Dependent Claim
53 words
A semiconductor device, comprising: a single crystalline substrate selected from the group consisting of silicon and germanium having a crystallographic surface tilted in the <001> direction; at least one layer of III-V semiconductor material disposed over said surface; and a light-emitting device formed in said at least one layer of III-V semiconductor material.
Claim 13
Dependent Claim
29 words
The semiconductor device as defined by claim 10, wherein said substrate is silicon and said at least one layer of III-V semiconductor material includes a layer of gallium arsenide.
Claim 14
Dependent Claim
19 words
The semiconductor device as defined by claim 11, wherein the angle of the tilt is at least 2.29 degrees.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-02 | 1993-04-03 | 1993-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-02 | 1997-04-03 | 1997-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-02 | 2001-04-03 | 2001-10-03 | $7700.00 | Window Closed / Lapsed |