US4871686A
Expired / Lapsed
US
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Integrated Schottky diode and transistor
Assignee: NXP USA Inc
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Filing: 1988-03-28
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Granted: 1989-10-03
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Expires: 2008-03-28
Abstract
Abstract An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip. Nested N-, P-, N- and P+ regions are formed on an N+ semiconductor substrate. A portion of the overlying dielectric is removed adjacent one of the P+ regions over the N- region and a Schottky contact formed to the N- region and an ohmic contact to the adjacent P+ region. N+ and P+ regions are desirably provided where the junctions between the N-/P- regions and the P-/N- regions intersect the surface to provide contact to the N- and P- regions respectively. A P region extends through the upper N- region and has U-shaped arms which partially overlie an annular shaped P+ region and is located between the active region of the PNP transistor and the collector contact to serve as a Kelvin probe. The arrangement is particularly valuable where a vertical PNP device without a buried collector region is required.
Inventors
- 👤 Robert B. Davies
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:10
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H03; H03K; H03K17/00; H03K17/06; H03K17/063; H10D8/00; H10D8/01; H10D8/051; H10D8/60; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
233 words
A process for forming a semiconductor device having an integral Schottky diode, comprising: providing a semiconductor substrate of a first type and first impurity concentration and having a principal surface; providing a first doped region of a second type opposite the first type and of a second impurity concentration and which forms a first junction with the substrate extending to the surface; providing a second doped region of the first type and a third impurity concentration in the first region and which forms a second junction with the first region extending to the surface; then in either order, (a) providing a third doped region of the second type and a fourth impurity concentration located at the intersection of the first junction and the surface and a fourth doped region of the second type and a fifth impurity concentration laterally within the second region at the surface, and (b) providing a fifth doped region of the first type and a sixth impurity concentration located at the intersection of the second junction and the surface; exposing first, second and third portions of the surface, respectively, on the third, fourth and fifth doped regions and a fourth portion of the surface laterally within the second region adjacent to the second portion of the surface; and providing a Schottky contact to the fourth portion of the surface and ohmic contact to the second portion of the surface.
Claim 2
Dependent Claim
233 words
A process for forming a semiconductor device having an integral Schottky diode, comprising: providing a semiconductor substrate of a first type and first impurity concentration and having a principal surface; providing a first doped region of a second type opposite the first type and of a second impurity concentration and which forms a first junction with the substrate extending to the surface; providing a second doped region of the first type and a third impurity concentration in the first region and which forms a second junction with the first region extending to the surface; then in either order, (a) providing a third doped region of the second type and a fourth impurity concentration located at the intersection of the first junction and the surface and a fourth doped region of the second type and a fifth impurity concentration laterally within the second region at the surface, and (b) providing a fifth doped region of the first type and a sixth impurity concentration located at the intersection of the second junction and the surface; exposing first, second and third portions of the surface, respectively, on the third, fourth and fifth doped regions and a fourth portion of the surface laterally within the second region adjacent to the second portion of the surface; and providing a Schottky contact to the fourth portion of the surface and ohmic contact to the second portion of the surface.
Claim 3
Dependent Claim
27 words
The process of claim 1 further comprising covering the Schottky contact with a diffusion barrier conductor and then covering the diffusion barrier conductor with a further conductor.
Claim 4
Dependent Claim
40 words
The process of claim 1 wherein the impurity concentration at the surface of the second portion exceeds 10 19 atoms/cm 3 and the impurity concentration at the surface of the fourth portion is less than 10 18 atoms/cm 3 .
Claim 5
Dependent Claim
42 words
The process of claim 3 wherein the impurity concentration at the surface of the second portion exceeds about 10 20 atoms/cm 3 and the impurity concentration at the surface of the fourth portion is less than about 10 17 atoms/cm 3 .
Claim 6
Dependent Claim
18 words
The process of claim 1 wherein the substrate is silicon and the Schottky contact comprises platinum and silicon.
Claim 7
Dependent Claim
16 words
The process of claim 1 wherein the fourth and fifth impurity concentrations are substantially the same.
Claim 8
Dependent Claim
15 words
The process of claim 1 wherein the third and fourth regions are formed substantially simultaneously.
Claim 9
Dependent Claim
28 words
The process of claim 1 wherein the steps of providing the fourth region and exposing the fourth portion comprise providing the fourth region substantially surrounding the fourth portion.
Claim 10
Dependent Claim
187 words
A process for forming a transistor having an integral Schottky diode, comprising: providing a semiconductor substrate having a major surface, wherein the substrate has a first region of a first type and impurity concentration extending to the surface; providing in the first region a second region of a second type opposite the first type and having a second impurity concentration and forming a first junction extending to the surface; then in either order, (i) providing a third region of the first type, having a third impurity concentration, located laterally within the second region and forming a second junction extending to the surface, and (ii) providing a fourth region of the second type, having a fourth impurity concentration, having a first part located laterally within the third region at the surface, wherein the first part of the fourth region extends from the surface through the third region into the second region; and forming a Schottky contact to a first portion of the surface of the third region adjacent the first part of the fourth region wherein the contact is shorted to the first part of the fourth region.
Claim 11
Dependent Claim
187 words
A process for forming a transistor having an integral Schottky diode, comprising: providing a semiconductor substrate having a major surface, wherein the substrate has a first region of a first type and impurity concentration extending to the surface; providing in the first region a second region of a second type opposite the first type and having a second impurity concentration and forming a first junction extending to the surface; then in either order, (i) providing a third region of the first type, having a third impurity concentration, located laterally within the second region and forming a second junction extending to the surface, and (ii) providing a fourth region of the second type, having a fourth impurity concentration, having a first part located laterally within the third region at the surface, wherein the first part of the fourth region extends from the surface through the third region into the second region; and forming a Schottky contact to a first portion of the surface of the third region adjacent the first part of the fourth region wherein the contact is shorted to the first part of the fourth region.
Claim 12
Dependent Claim
29 words
The process of claim 9 wherein the step of forming the fourth region comprises forming a second part located at the intersection of the first junction and the surface.
Claim 13
Dependent Claim
29 words
The process of claim 9 further comprising: providing a fifth region of the second type and a fifth impurity concentration located laterally within the third region at the surface.
Claim 14
Dependent Claim
47 words
The process of claim 11 wherein the steps of providing the fourth and fifth regions, when viewed looking toward the surface, comprise providing the first part of the fourth region having U shaped arms and providing the fifth region at least partly between the U shaped arms.
Claim 15
Dependent Claim
54 words
The process of claim 11 wherein the steps of providing the fourth and fifth regions and the Schottky contact comprise providing the fifth region having an annular shape in the plane of the surface surrounding the first portion of the surface and providing the fourth region having U shaped arms overlapping the fifth region.
Claim 16
Dependent Claim
65 words
The process of claim 11 wherein the step of forming the Schottky contact comprises, exposing a second portion of the surface on the fifth region and the first portion of the surface on the third region adjacent the fifth region and thereafter simultaneously making a Schottky contact to the first portion of the surface and an ohmic contact to the second portion of the surface.
Claim 17
Dependent Claim
68 words
The process of claim 11 further comprising, providing in either order (i) a sixth region of the second type and a sixth impurity concentration at least partly in the second region at the surface and (ii) a seventh region of the first type and a seventh impurity concentration located at least partly in the third region at the surface, wherein the sixth and seventh regions are spaced apart.
Claim 18
Dependent Claim
69 words
The process of claim 9 where the step of providing a substrate with a first region comprises implanting a first dopant of the second type to a first depth and first dose and then implanting a second dopant of the second type to a second depth and second dose wherein the second depth is less than the first depth and the second dose is greater than the first dose.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-02 | 1993-04-03 | 1993-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-02 | 1997-04-03 | 1997-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-02 | 2001-04-03 | 2001-10-03 | $7700.00 | Window Closed / Lapsed |