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US4871651A Expired / Lapsed US ⏱️ 0.0 years remaining

Cryogenic process for metal lift-off

Assignee: Ford Motor Co
•
Filing: 1988-06-27
•
Granted: 1989-10-03
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Expires: 2008-06-27
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Abstract

Abstract This invention is directed to a process for the cryogenic lift-off of metal/resist material from a surface of a substrate.

Inventors

  • 👤 Robert C. McCune, Jr.
  • 👤 Louis Toth
  • 👤 Robert S. Bailey

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-10 01:23
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; H; H10; H10P; H10P76/00; H10P76/20; H10P76/202; H05; H05K; H05K3/00; H05K3/10; H05K3/14; H05K3/143

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 160 words
A process for the cryogenic lift-off of metal/resist material from a surface of a substrate, which process comprises: providing a layer of resist material in a desired pattern on a surface of a substrate, said substrate possessing a thermal coefficient of expansion different from that of said resist material and said layer (i) defining uncovered surface areas of said substrate and (ii) having undercut side walls adjacent said uncovered surface areas; then applying a layer of metal whereby a first portion of said metal deposits on the surface of said resist material and a second portion of said metal deposits on said uncovered surface areas of said substrate forming a layered article, said metal being adherent to said surface of said substrate, said first portion and said portion thereof not being in contact with each other; and then subjecting said layered article to a temperature sufficiently low to cause said resist layer to detach from said surface of said substrate.
Claim 2
Dependent Claim 160 words
A process for the cryogenic lift-off of metal/resist material from a surface of a substrate, which process comprises: providing a layer of resist material in a desired pattern on a surface of a substrate, said substrate possessing a thermal coefficient of expansion different from that of said resist material and said layer (i) defining uncovered surface areas of said substrate and (ii) having undercut side walls adjacent said uncovered surface areas; then applying a layer of metal whereby a first portion of said metal deposits on the surface of said resist material and a second portion of said metal deposits on said uncovered surface areas of said substrate forming a layered article, said metal being adherent to said surface of said substrate, said first portion and said portion thereof not being in contact with each other; and then subjecting said layered article to a temperature sufficiently low to cause said resist layer to detach from said surface of said substrate.
Claim 3
Dependent Claim 20 words
The process according to claim 1, wherein said resist material is selected from positive photoresist materials and negative photoresist materials.
Claim 4
Dependent Claim 13 words
The process according to claim 1, wherein said substrate is a semiconductor material.
Claim 5
Dependent Claim 19 words
The process according to claim 3, wherein said semiconductor material is selected from silicon, gallium arsenide and indium phosphide.
Claim 6
Dependent Claim 16 words
The process according to claim 4, wherein said substrate is a wafer of single crystal silicon.
Claim 7
Dependent Claim 30 words
The process according to claim 1, wherein said metal is selected from aluminum, iron, nickel, copper, lead, silver, chromium, tungsten, tin, platinum, molybdenum, gold and alloys of any of them.
Claim 8
Dependent Claim 23 words
The process according to claim 1, wherein said layer of metal is applied by a technique selected from evaporation and sputtering deposition methods.
Claim 9
Dependent Claim 29 words
The process according to claim 1, wherein said layered article is subjected to a cryogenic temperature to cause said resist layer to detach from said surface of said substrate.
Claim 10
Dependent Claim 28 words
The process according to claim 8, wherein said layered article is subjected to liquid nitrogen to cause said resist layer to detach from said surface of said substrate.

References Cited (Backward Citations)

US4631250A Cited
US4662989A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-10-02 1993-04-03 1993-10-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-10-02 1997-04-03 1997-10-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-10-02 2001-04-03 2001-10-03 $7700.00 Window Closed / Lapsed

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