US4870472A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for resistor trimming by metal migration
Assignee: Semiconductor Components Industries LLC
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Filing: 1986-04-28
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Granted: 1989-09-26
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Expires: 2006-04-28
Abstract
Abstract A method for trimming a diffused or implanted resistor located within an integrated circuit is disclosed. This technique for trimming a resistor requires the use of high current pulses and geometric shaped metal contacts. The current pulses react with the electropositive metal atoms in the thin film conductor and cause the metal atoms to migrate to another location, thus altering the value of the resistor by progressively decreasing the conductivity of the resistor.
Inventors
- 👤 Robert L. Vyne
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:18
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H01; H01C; H01C17/00; H01C17/22; H01C17/26; H01C17/265; H01C17/267; H10P; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
59 words
A resistor formed in a semiconductive substrate, comprising: a resistive region in said substrate having first and second ends; a first contact for contacting said region proximate said first end; a second contact for contacting said region proximate said second end; and a metal filament formed in said region and extending from said first contact toward said second contact.
Claim 2
Dependent Claim
59 words
A resistor formed in a semiconductive substrate, comprising: a resistive region in said substrate having first and second ends; a first contact for contacting said region proximate said first end; a second contact for contacting said region proximate said second end; and a metal filament formed in said region and extending from said first contact toward said second contact.
Claim 3
Dependent Claim
106 words
A resistor device formed in a substrate, comprising: a semiconductor region formed in said substrate and having first and second ends; a first metallic contact for contacting said region proximate said first end; a second metallic contact for contacting said region proximate said second end, said first metallic contact having an apex directed toward said second metallic contact; at least one additional metallic contact for contacting said region intermediate said first and second metallic contacts and having an apex directed toward said second metallic contact; and a first metal filament formed in said region and extending from said first metallic contact toward said second metallic contact.
Claim 4
Dependent Claim
106 words
A resistor device formed in a substrate, comprising: a semiconductor region formed in said substrate and having first and second ends; a first metallic contact for contacting said region proximate said first end; a second metallic contact for contacting said region proximate said second end, said first metallic contact having an apex directed toward said second metallic contact; at least one additional metallic contact for contacting said region intermediate said first and second metallic contacts and having an apex directed toward said second metallic contact; and a first metal filament formed in said region and extending from said first metallic contact toward said second metallic contact.
Claim 5
Dependent Claim
29 words
A device according to claim 2 further comprising a second metal filament formed in said region and extending from said at least one additional contact toward said second contact.
Claim 6
Dependent Claim
50 words
A resistor manufactured by: providing a resistive semiconductive region; providing first and second metal contacts for contacting said region; and passing at least one current pulse from said first contact to said second contact whereby metal migrates from said first contact toward said second contact to reduce the resistance therebetween.
Claim 7
Dependent Claim
50 words
A resistor manufactured by: providing a resistive semiconductive region; providing first and second metal contacts for contacting said region; and passing at least one current pulse from said first contact to said second contact whereby metal migrates from said first contact toward said second contact to reduce the resistance therebetween.
Claim 8
Dependent Claim
76 words
A passive semiconductor device formed in a substrate comprising: a semiconductive region formed in said substrate having first and second ends; a first contact for contacting said region proximate said first end; a second contact for contacting said region proximate said second end; at least one additional contact for contacting said region intermediate said first and second contacts; and a metal filament formed in said region and extending from said additional contact toward said second contact.
Claim 9
Dependent Claim
76 words
A passive semiconductor device formed in a substrate comprising: a semiconductive region formed in said substrate having first and second ends; a first contact for contacting said region proximate said first end; a second contact for contacting said region proximate said second end; at least one additional contact for contacting said region intermediate said first and second contacts; and a metal filament formed in said region and extending from said additional contact toward said second contact.
References Cited (Backward Citations)
US4467312A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-09-25 | 1993-03-27 | 1993-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-25 | 1997-03-27 | 1997-09-26 | $3760.00 | Window Closed / Lapsed |
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