US4867801A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Triple-junction heteroepitaxial AlGa/CuInSe2 tandem solar cell and method of manufacture
Assignee: Boeing Co
•
Filing: 1988-06-07
•
Granted: 1989-09-19
•
Expires: 2008-06-07
Abstract
Abstract An ultra-high-efficiency, monolithic, heteroepitaxial solar cell having a high specific power is disclosed. The solar cell includes three photoactive regions connected in series by their structure as a substantially single crystal multilayer film. The three photoactive junctions are in tandem optically. The upper cell, having the highest bandgap, is exposed to the entire solar spectrum, wherein those wavelengths whose energy is less than the upper cell's bandgap are transmitted to the two underlying cells. The intermediate cell similarly filters the solar spectrum transmitted to the lower cell which has the lowest bandgap.
Inventors
- 👤 Billy J. Stanbery
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:12
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; H10F10/161; H10F10/162; H10F10/19; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y02E10/543; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
56 words
A high efficiency tandem solar cell, comprising: a. an Al x Ga 1-x As upper cell; b. an Al y Ga 1-y As intermediate cell; c. a transition zone attached to the intermediate cell to match the lattice structure of Al y Ga 1-y As to CuInSe 2 ; and d. a CuInSe 2 lower cell.
Claim 2
Dependent Claim
56 words
A high efficiency tandem solar cell, comprising: a. an Al x Ga 1-x As upper cell; b. an Al y Ga 1-y As intermediate cell; c. a transition zone attached to the intermediate cell to match the lattice structure of Al y Ga 1-y As to CuInSe 2 ; and d. a CuInSe 2 lower cell.
Claim 3
Dependent Claim
32 words
The solar cell of claim 1, wherein said upper cell has an effective bandgap range of about 1.85-2.00 eV and said intermediate cell has an effective bandgap range of about 1.42-1.60 eV.
Claim 4
Dependent Claim
25 words
The solar cell of claim 1, wherein said intermediate cell includes a bulk region having a value of y in the range of about 0.20<y≦0.
Claim 5
Dependent Claim
25 words
The solar cell of claim 3, wherein said intermediate cell includes a bulk region having a value of y in the range of about 0.05≦y≦0.
Claim 6
Dependent Claim
18 words
The solar cell of claim 3, wherein said bulk region has a thickness of at least one-half micron.
Claim 7
Dependent Claim
20 words
The solar cell of claim 1, wherein said upper cell has a value of x in the range of 0.9≦x≦0.20.
Claim 8
Dependent Claim
42 words
The solar cell of claim 1 wherein said upper cell has a thickness of less than 20 microns, said intermediate cell has a thickness in the range of 1-400 microns, and the lower cell has a thickness of less than 10 microns.
Claim 9
Dependent Claim
29 words
The solar cell of claim 1, wherein said solar cell has an efficiency of approximately 30% AMO or greater and a specific power of at least about 1000 watts/kg.
Claim 10
Dependent Claim
16 words
The solar cell of claim 1, wherein said upper cell and intermediate cell comprise a double-heterostructure.
Claim 11
Dependent Claim
17 words
The solar cell of claim 9, wherein said upper cell and intermediate cell comprise a single crystal.
Claim 12
Dependent Claim
16 words
The solar cell of claim 1, wherein the transition zone includes at least on II-VI alloy.
Claim 13
Dependent Claim
36 words
The solar cell of claim 1, wherein the transition zone includes a first II-VI alloy forming an upper junction with the intermediate cell and a second II-VI alloy forming a lower junction with the lower cell.
Claim 14
Dependent Claim
46 words
The solar cell of claim 1, wherein the transition zone include a first region of ZnS x Se 1-x attached to the intermediate cell and a second region of Cd y Zn 1y S z Se 1-z attached to the first region and the lower cell.
Claim 15
Dependent Claim
19 words
The solar cell of claim 1, wherein the CuInSe 2 lower cell is heteroepitaxially deposited on the transition zone.
Claim 16
Dependent Claim
40 words
The solar cell of claim 1, wherein the CuInSe 2 lower cell is p-type and comprises a first region deficient in copper, a second region comprising the p-type bulk of the lower cell, and a third region rich in selenium.
Claim 17
Dependent Claim
32 words
The solar cell of claim 1, wherein said intermediate cell has a p + -AlAs component layer within about 0.15 microns of the interface between the intermediate cell and the lower cell.
Claim 18
Independent Claim
92 words
A method of making a solar cell comprising the steps of: a. forming a CLEFT buffer on a removable substrate; b. depositing an upper cell on said CLEFT buffer; c. depositing an intermediate cell on said upper thin film cell; d. forming a lattice mismatch transition zone on said intermediate cell; e. depositing a lower cell on said lattice mismatch transition zone; f. depositing a back contact on said lower cell; g. separating the layers deposited in steps a-f from said substrate; and h. removing said CLEFT buffer from said upper cell.
Claim 19
Independent Claim
92 words
A method of making a solar cell comprising the steps of: a. forming a CLEFT buffer on a removable substrate; b. depositing an upper cell on said CLEFT buffer; c. depositing an intermediate cell on said upper thin film cell; d. forming a lattice mismatch transition zone on said intermediate cell; e. depositing a lower cell on said lattice mismatch transition zone; f. depositing a back contact on said lower cell; g. separating the layers deposited in steps a-f from said substrate; and h. removing said CLEFT buffer from said upper cell.
Claim 20
Dependent Claim
37 words
The method of claim 17, wherein said upper cell is formed to have an effective bandgap range of about 1.85-2.00 eV and said intermediate cell is formed to have an effective bandgap range of about 1.42-1.60 eV.
Claim 21
Dependent Claim
33 words
The method of claim 17, wherein said intermediate cell is formed of Al y Ga 1-y As and includes a bulk region having a value of y in the range of about 0.20≦y≦0.
Claim 22
Dependent Claim
22 words
The method of claim 19, wherein said bulk region is formed having a value of y in the range of about 0.05≦y≦0.
Claim 23
Dependent Claim
27 words
The method of claim 17, wherein said upper cell is formed of Al x Ga 1-x As where x has a value in the range of 0.9≦x≦0.20.
Claim 24
Dependent Claim
8 words
The product of the process of claim 17.
Claim 25
Independent Claim
88 words
A method of making a high efficiency tandem solar cell comprising the steps of: a. preparing a GaAs substrate having an upper and a lower surface; b. depositing an intermediate cell comprising Al y Ga 1-y As on the upper surface of said GaAs substrate; c. depositing an upper cell comprising Al x Ga 1-x As on said intermediate cell; d. depositing a lattice mismatch transition zone on the lower surface of said substrate; and e. depositing a I-III-VI 2 photoactive cell on said lattice mismatch transition zone.
Claim 26
Independent Claim
88 words
A method of making a high efficiency tandem solar cell comprising the steps of: a. preparing a GaAs substrate having an upper and a lower surface; b. depositing an intermediate cell comprising Al y Ga 1-y As on the upper surface of said GaAs substrate; c. depositing an upper cell comprising Al x Ga 1-x As on said intermediate cell; d. depositing a lattice mismatch transition zone on the lower surface of said substrate; and e. depositing a I-III-VI 2 photoactive cell on said lattice mismatch transition zone.
Claim 27
Dependent Claim
37 words
The method of claim 23, wherein said upper cell is formed to have an effective bandgap range of about 1.85-2.00 eV and said intermediate cell is formed to have an effective bandgap range of about 1.42-1.60 eV.
Claim 28
Dependent Claim
22 words
The method of claim 23, wherein said bulk region is formed having a value of y in the range of about 0.05≦y≦0.
Claim 29
Dependent Claim
8 words
The product of the process of claim 23.
Claim 30
Dependent Claim
53 words
A triple-junction, monolithic heteroepitaxial solar cell, comprising: a. an upper cell of a III-V alloy; b. an intermediate cell of a III-V alloy deposited on the upper cell; c. a lattice-mismatch transition zone deposited on the intermediate cell; and d. a lower cell of a I-III-VI 2 alloy deposited on the transition zone.
Claim 31
Dependent Claim
53 words
A triple-junction, monolithic heteroepitaxial solar cell, comprising: a. an upper cell of a III-V alloy; b. an intermediate cell of a III-V alloy deposited on the upper cell; c. a lattice-mismatch transition zone deposited on the intermediate cell; and d. a lower cell of a I-III-VI 2 alloy deposited on the transition zone.
Claim 32
Dependent Claim
30 words
The solar cell of claim 27, wherein the upper cell has a bandgap of between about 1.85-2.00 eV and the intermediate cell has a bandgap of between about 1.42-1.60 eV.
Claim 33
Dependent Claim
56 words
The solar cell of claim 28, wherein the upper cell is an Al x Ga 1-x As alloy, the intermediate cell is an Al y Ga 1-y As, the transition zone includes at least one II-VI alloy, and the lower cell is a CuInSe 2 alloy deficient in copper in the region adjacent the transition zone.
Claim 34
Dependent Claim
14 words
The solar cell of claim 27, wherein the transition zone includes a II-VI alloy.
References Cited (Backward Citations)
US31968A
Cited
USRE31968E
Cited
US4523051A
Cited
US4547622A
Cited
US4680422A
Cited
US4795501A
Cited
US4703131A
Cited
US4684761A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |