Patent US4866032A successfully refreshed from Google Patents.
US4866032A
Expired / Lapsed
US
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Method and apparatus for producing thin film of high to superconductor compound having large area
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-05-12
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Granted: 1989-09-12
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Expires: 2008-05-12
Abstract
Abstract A thin film of a preselected compound having a large area is continuously produced on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of a substrate by sputtering, comprising the steps of: rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position, at the first position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, and at the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a part of the substrate is positioned in the path of the sputtered elements, whereby the elementary composition of the first target member at the second position is adjusted to the preselected composition.
Inventors
- 👤 Naoji Fujimori
- 👤 Keizo Harada
- 👤 Shuji Yazu
- 👤 Tetsuji Jodai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/562; C23C14/34; C23C14/35; Y; Y10; Y10S; Y10S505/00; Y10S505/80; Y10S505/815; Y10S505/816
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
201 words
A method for continuously producing a film of a preselected compound having a large area on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of said substrate by sputtering, comprising the steps of: rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position, at the position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, and at the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a part of the substrate is positioned in the path of the sputtered elements, whereby the elementary composition of the first target member at the second position is adjusted to the preselected composition.
Claim 2
Independent Claim
201 words
A method for continuously producing a film of a preselected compound having a large area on a substrate by depositing elements constituting the preselected compound from a target member onto the surface of said substrate by sputtering, comprising the steps of: rotating a first target member having a flat surface disposed around an axis which crosses the surface and comprising elements of the preselected compound so that a first part of the surface of target member is positioned at a first sputtering position and another part of the first target member is positioned at a second sputtering position, at the position, sputtering at least one second target comprising at least one element of the preselected compound which is easily sputtered from the first target member so as to supply the deficient element to the first target member, and at the second position, sputtering the elements from the first target member so as to deposit them on the surface of said substrate while continuously supplying the substrate so that a part of the substrate is positioned in the path of the sputtered elements, whereby the elementary composition of the first target member at the second position is adjusted to the preselected composition.
Claim 3
Dependent Claim
33 words
The method according to claim 1, wherein the target member is in the form of a cylinder or disc and rotated around the axis of the cylinder or the center of the disc.
Claim 4
Dependent Claim
146 words
The method according to claim 1, wherein the compound to be sputter deposited is an oxide superconductor having a composition of the formula: (M.sup.1.sub.1-x M.sup.2.sub.x)M.sup.3.sub.y M.sup.4.sub.z (I) wherein M 1 is at least one element selected from the IIa group elements, M 2 is at least one element selected from the IIIb group elements, M 3 is at least one element selected from Ib, IIb, IIIa, and IVb and Vb group elements, M 4 is at least one element selected from the group consisting of oxygen, boron, carbon, nitrogen, fluorine, and sulfur, x is the atomic ratio of M 2 to (M 1 +M 2 ) and has a value from 0.1 to 0.9 and y and z are atomic ratios of M 3 and M 4 to (M 1 +M 2 ) and have values from 1.0 to 4.0 and from 1 to 5, respectively.
Claim 5
Dependent Claim
55 words
The method according to claim 1, wherein the substrate on which the thin film of the compound is formed is a metallic substrate made of a metal selected from the group consisting of stainless steel, Cu, Ag, Au, Pt, Pd, Rh, Fe, Pb, Sn, Cd, Ti, W, Mo, Zr, Hf, Ta, Nb, and alloys thereof.
Claim 6
Dependent Claim
17 words
The method according to claim 1, wherein the sputtering at the first position is ion beam sputtering.
Claim 7
Dependent Claim
16 words
The method according to claim 1, wherein the sputtering at the second position is magnetron sputtering.
Claim 8
Dependent Claim
22 words
The method according to claim 1, wherein the substrate is heated at a temperature of from 230° to 1,410° C. during sputtering.
Claim 9
Dependent Claim
30 words
The method according to claim 1, wherein the substrate is heated at a temperature of from 230° to 1,410° C. after forming the thin film of the preselected compound thereon.
Claim 10
Independent Claim
134 words
An apparatus for continuously producing a thin film of a preselected compound having a large area on a substrate, comprising: a chamber, the internal pressure of which is reduced to high vacuum, means for supplying a selected gas atmosphere to the chamber, first sputtering means for supplying at least one element of the preselected compound to a first target member having a flat surface disposed about an axis which crosses the surface and comprising elements of the preselected compound, and second sputtering means for depositing elements constituting the preselected compound from the first target member onto the surface of a substrate positioned in the chamber, wherein the target member moves between a first position at which the first sputtering is carried out and a second position at which the second sputtering is carried out.
Claim 11
Independent Claim
134 words
An apparatus for continuously producing a thin film of a preselected compound having a large area on a substrate, comprising: a chamber, the internal pressure of which is reduced to high vacuum, means for supplying a selected gas atmosphere to the chamber, first sputtering means for supplying at least one element of the preselected compound to a first target member having a flat surface disposed about an axis which crosses the surface and comprising elements of the preselected compound, and second sputtering means for depositing elements constituting the preselected compound from the first target member onto the surface of a substrate positioned in the chamber, wherein the target member moves between a first position at which the first sputtering is carried out and a second position at which the second sputtering is carried out.
Claim 12
Dependent Claim
34 words
The apparatus according to claim 9, wherein the target member is in the form of a cylinder or disc and is rotated around an axis of the cylinder or a center of the disc.
Claim 13
Dependent Claim
17 words
The apparatus according to claim 9, wherein the first sputtering means is an ion beam sputtering apparatus.
Claim 14
Dependent Claim
16 words
The apparatus according to claim 9, wherein the second sputtering means is a magnetron sputtering apparatus.
References Cited (Backward Citations)
US4046666A
Cited
US4434037A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-11 | 2001-03-13 | 2001-09-12 | $7700.00 | Window Closed / Lapsed |