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US4866007A
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Method for preparing single-crystal ZnSe
Assignee: PRODUCTION ENGINEERING ASSOCIATION 4-63 MIYAHARA 4-CHOME YODOGAWA-KU OSAKA-SHI OSAKA JAPAN
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Filing: 1988-03-18
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Granted: 1989-09-12
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Expires: 2008-03-18
Abstract
Abstract A method for preparing single-crystal ZnSe comprising the steps of: working polycrystalline ZnSe into a rod-shaped starting material; placing the starting material in a reaction vessel; filling the atmosphere of the reaction vessel with an inert gas, nitrogen, H 2 Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; and converting the polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving the reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T 1 in the range of from about room temperature to about 100° C., a temperature increasing zone BC having a temperature gradient of from about 50° to about 200° C./cm, a hot zone CD having a temperature T 2 in the range of from about 700° to about 900° C., a temperature decreasing zone DE having a temperature gradient of from about -200° to about -50° C./cm, and a cool zone EF having a temperature T 1 in the range of from about room temperature to about 100° C.
Inventors
- 👤 Tsunemasa Taguchi
- 👤 Isao Kidoguchi
- 👤 Hirokuni Nanba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:31
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; Y; Y10; Y10S; Y10S117/00; Y10S117/906
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
188 words
A method for preparing single-crystal ZnSe comprising the steps of: working polycrystalline ZnSe into a rod-shaped starting material; placing said starting material in a reaction vessel; filling the atmosphere of said reaction vessel with an inert gas, nitrogen, H 2 Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; and converting said polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving said reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T 1 in the range of from about room temperature to about 100° C., a temperature increasing zone BC having a temperature gradient of from about 50° to about 200° C./cm, a hot zone CD having a temperature T 2 in the range of from about 700° to about 900° C., a temperature decreasing zone DE having a temperature gradient of from about -200 to about -50° C./cm, and a cool zone EF having a temperature T 1 in the range of from about room temperature to about 100° C.
Claim 2
Independent Claim
188 words
A method for preparing single-crystal ZnSe comprising the steps of: working polycrystalline ZnSe into a rod-shaped starting material; placing said starting material in a reaction vessel; filling the atmosphere of said reaction vessel with an inert gas, nitrogen, H 2 Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; and converting said polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving said reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T 1 in the range of from about room temperature to about 100° C., a temperature increasing zone BC having a temperature gradient of from about 50° to about 200° C./cm, a hot zone CD having a temperature T 2 in the range of from about 700° to about 900° C., a temperature decreasing zone DE having a temperature gradient of from about -200 to about -50° C./cm, and a cool zone EF having a temperature T 1 in the range of from about room temperature to about 100° C.
Claim 3
Dependent Claim
21 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said polycrystalline ZnSe is prepared by a CVD process.
Claim 4
Dependent Claim
19 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said polycrystalline ZnSe is prepared by sintering.
Claim 5
Dependent Claim
17 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said inert gas is argon.
Claim 6
Dependent Claim
25 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said inert gas is helium or a gaseous mixture of helium and argon.
Claim 7
Dependent Claim
25 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said inert gas is neon or a gaseous mixture of neon and argon.
Claim 8
Dependent Claim
34 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said atmosphere of said reaction vessel is filled with a gaseous mixture of argon as said inert gas and H 2 Se.
Claim 9
Dependent Claim
30 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said atmosphere of said reaction vessel is filled with a gaseous mixture of nitrogen and H 2 Se.
Claim 10
Dependent Claim
35 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said temperature profile is formed in the vertical direction and said reaction vessel containing said polycrystalline ZnSe is moved either upwardly or downwardly.
Claim 11
Dependent Claim
39 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said temperature profile is formed in the horizontal direction and said reaction vessel containing said polycrystalline ZnSe is moved from left to right or right to left.
Claim 12
Dependent Claim
19 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said reaction vessel comprises a tublar configuration.
Claim 13
Dependent Claim
19 words
A method for preparing single-crystal ZnSe as claimed in claim 11, wherein said reaction vessel is a quartz tube.
Claim 14
Dependent Claim
19 words
A method for preparing single-crystal ZnSe as claimed in claim 11, wherein said reaction vessel is made of graphite.
Claim 15
Dependent Claim
19 words
A method for preparing single-crystal ZnSe as claimed in claim 11, wherein said reaction vessel is made of alumina.
Claim 16
Dependent Claim
20 words
A method for preparing single-crystal ZnSe as claimed in claim 11, wherein said reaction vessel is made of boron nitride.
Claim 17
Dependent Claim
24 words
A method for preparing single-crystal ZnSe as claimed in claim 11, wherein said reaction vessel is sealed off and is closed at both ends.
Claim 18
Dependent Claim
30 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said reaction vessel is not sealed off and is equipped with a gas inlet and a gas outlet.
Claim 19
Dependent Claim
27 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said atmosphere of said reaction vessel has a pressure of from 1 to 10 Torr.
Claim 20
Dependent Claim
51 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said temperature increasing zone BC has a temperature gradient of about 100° C./cm, and said temperature decreasing zone DE has a temperature gradient of about -100° C./cm, and said hot zone CD has a temperature of about 860° C.
Claim 21
Dependent Claim
27 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said hot zone CD has a length of from about 5 to about 20 mm.
Claim 22
Dependent Claim
23 words
A method for preparing single-crystal ZnSe as claimed in claim 20, wherein said hot zone CD has a length of about 10 mm.
Claim 23
Dependent Claim
19 words
A method for preparing single-crystal ZnSe as claimed in claim 1, wherein said moving rate is about 2 mm/day.
Claim 24
Dependent Claim
20 words
A method for preparing single-crystal ZnSe as claimed in claim 1, further comprising conducting said moving step more than once.
Claim 25
Dependent Claim
17 words
A method for preparing single-crystal ZnSe as claimed in claim 23, wherein said inert gas is argon.
Claim 26
Dependent Claim
25 words
A method for preparing single-crystal ZnSe as claimed in claim 23, wherein said inert gas is helium or a gaseous mixture of helium and argon.
Claim 27
Dependent Claim
27 words
A method for preparing single-crystal ZnSe as claimed in claim 23, wherein said atmosphere of said reaction vessel has a pressure of from 1 to 10 Torr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-11 | 2001-03-13 | 2001-09-12 | $7700.00 | Window Closed / Lapsed |