Micro-electronics devices and methods of manufacturing same

Claim 1

A method of forming a low dielectric constant insulation layer according to thick film procedures comprising the steps of: (a) combining a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle, and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series) into a homogeneous material; (b) depositing the material from step (a) onto the circuit portion to a desired thickness for the insulation layer; and (c) drying and firing the deposited material from step (b) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein.

Claim 2

A method of forming a low dielectric constant insulation layer according to thick film procedures comprising the steps of: (a) combining a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle, and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series) into a homogeneous material; (b) depositing the material from step (a) onto the circuit portion to a desired thickness for the insulation layer; and (c) drying and firing the deposited material from step (b) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein.

Claim 4

A method of producing a low dielectric constant insulation layer according to thick film procedures comprising the steps of: (a) combining a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle, and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series); (b) depositing the material from step (a) onto the metal pattern to a desired thickness; (c) drying and firing the low dielectric constant material deposited in step (b) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein; (d) repeating steps (b) and (c) until the final desired thickness of the insulation layer is approached; (e) depositing a conventional thick film dielectric insulating material onto the structure resulting from step (d) to a desired thickness to planarize the resulting structure; and, (f) drying and firing the material from step (e).

Claim 5

A method of producing a low dielectric constant insulation layer according to thick film procedures comprising the steps of: (a) combining a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle, and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series); (b) depositing the material from step (a) onto the metal pattern to a desired thickness; (c) drying and firing the low dielectric constant material deposited in step (b) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein; (d) repeating steps (b) and (c) until the final desired thickness of the insulation layer is approached; (e) depositing a conventional thick film dielectric insulating material onto the structure resulting from step (d) to a desired thickness to planarize the resulting structure; and, (f) drying and firing the material from step (e).

Claim 6

A method of producing a thick film device according to thick film procedures comprising the steps of: (a) providing a rigid dielectric substrate; (b) depositing a predetermined metal pattern on said substrate; (c) providing a low dielectric constant material which comprises a substantially homogeneous blend of a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series); (d) depositing the material from step (c) onto the deposited metal pattern; (e) drying and firing the material deposited in step (d) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein; and (f) repeating steps (b) to (e) until the desired number of metal patterns separated by layers of low dielectric material are completed.

Claim 7

A method of producing a thick film device according to thick film procedures comprising the steps of: (a) providing a rigid dielectric substrate; (b) depositing a predetermined metal pattern on said substrate; (c) providing a low dielectric constant material which comprises a substantially homogeneous blend of a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series); (d) depositing the material from step (c) onto the deposited metal pattern; (e) drying and firing the material deposited in step (d) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein; and (f) repeating steps (b) to (e) until the desired number of metal patterns separated by layers of low dielectric material are completed.