Smelting process for making elemental silicon and alloys thereof, and apparatus therefor

Claim 2

A process for smelting silicon dioxide to produce the corresponding elemental silicon which comprises: reducing the ,silicon dioxide with carbonaceous reductant under reducing conditions in the body of an electrometallurgical furnace wherein part of the silicon content of the silicon dioxide is converted into a liquid elemental silicon product and part is converted into gaseous oxide; tapping the liquid product from the body of the furnace; collecting at least a portion of the gaseous oxide from the body of the furnace; establishing and maintaining countercurrent contact between the collected gaseous oxide and a bed of carbonaceous reductant under conditions effective for reducing at least part of the collected-gaseous oxide to additional elemental silicon; and recovering the additional elemental silicon.

Claim 3

The process of claim 1 wherein the silicon of the gaseous oxide is in a state of valence lower than that of silicon dioxide.

Claim 4

The process of claim 1 wherein an alloy of silicon is being produced as the product in the body of the furnace, and an alloying element is fed thereto.

Claim 5

The process of claim 1 wherein a vent gas containing byproduct carbon monoxide is recovered from the countercurrent contact.

Claim 6

The process of claim 1 wherein the furnace used is a submerged arc furnace having a drawoff tube projecting into the body of the furnace for the collection of the gaseous oxide.

Claim 7

The process of claim 5 wherein there are a plurality of drawoff tubes.

Claim 8

The process of claim 5 wherein contact between the collected gaseous oxide and the bed of carbonaceous reductant is maintained in a drawoff tube, and the product of the contact therein is returned to the body of the furnace.

Claim 9

The process of claim 7 wherein the drawoff tube is a hollow electrode.

Claim 10

The process of claim 5 wherein contact between the collected gaseous oxide and the bed of carbon is maintained in an external reactor, and the product of the contact therein is discharged therefrom as a separate product.

Claim 11

A process for producing elemental silicon or an alloy thereof which comprises: establishing and maintaining a submerged arc in an electrometallurgical furnace whose burden comprises silica and carbonaceous reductant; collecting effluent gas containing silicon monoxide gas in a hollow electrode that projects into the burden; establishing countercurrent contact in said electrode between entering effluent gas and a descending bed of carbonaceous solids, the contact being maintained under conditions effective for converting an initial portion of the collected silicon monoxide gas into elemental silicon by reacting it with silicon carbide formed in a later stage of the contact, thereby leaving an ascending remainder comprising silicon monoxide gas; continuing the contact between the bed of carbonaceous solids and the ascending remainder under conditions effective for forming silicon carbide from the reaction between silicon monoxide gas in the remainder and carbonaceous solids of the bed; passing the resulting silicon carbide into contact with the entering effluent gas; and returning the resulting elemental silicon to the furnace.

Claim 12

A process for producing elemental silicon or an alloy thereof which comprises: establishing and maintaining a submerged arc in an electrometallurgical furnace whose burden comprises silica and carbonaceous reductant; collecting effluent gas containing silicon monoxide gas in a hollow electrode that projects into the burden; establishing countercurrent contact in said electrode between entering effluent gas and a descending bed of carbonaceous solids, the contact being maintained under conditions effective for converting an initial portion of the collected silicon monoxide gas into elemental silicon by reacting it with silicon carbide formed in a later stage of the contact, thereby leaving an ascending remainder comprising silicon monoxide gas; continuing the contact between the bed of carbonaceous solids and the ascending remainder under conditions effective for forming silicon carbide from the reaction between silicon monoxide gas in the remainder and carbonaceous solids of the bed; passing the resulting silicon carbide into contact with the entering effluent gas; and returning the resulting elemental silicon to the furnace.

Claim 13

In the electrometallurgical furnace production of elemental silicon or an alloy thereof wherein silica and carbonaceous reductant react to form elemental silicon and silicon monoxide gas, the improvement which comprises: withdrawing silicon monoxide gas from the furnace; in an external reactor establishing and maintaining countercurrent contact between the withdrawn silicon monoxide gas and silicon carbide at a temperature effective for reducing the silicon monoxide to elemental silicon; and recovering the resulting elemental silicon from the external reactor.

Claim 14

In the electrometallurgical furnace production of elemental silicon or an alloy thereof wherein silica and carbonaceous reductant react to form elemental silicon and silicon monoxide gas, the improvement which comprises: withdrawing silicon monoxide gas from the furnace; in an external reactor establishing and maintaining countercurrent contact between the withdrawn silicon monoxide gas and silicon carbide at a temperature effective for reducing the silicon monoxide to elemental silicon; and recovering the resulting elemental silicon from the external reactor.

Claim 15

The process of claim 11 wherein the temperature for reducing the silicon monoxide to elemental silicon with the silicon carbide in the external reactor is not substantially below 1850° C.

Claim 16

The process of claim 11 wherein an alloy of silicon is produced in the furnace while elemental silicon is produced in the external reactor.

Claim 17

A process for producing elemental silicon which comprises reacting silicon monoxide gas with silicon carbide at a temperature not substantially below 1850° C. in a reactor external to the source of the silicon monoxide gas.

Claim 18

A process for producing elemental silicon which comprises reacting silicon monoxide gas with silicon carbide at a temperature not substantially below 1850° C. in a reactor external to the source of the silicon monoxide gas.

Claim 19

The process of claim 14 wherein the silicon monoxide is a byproduct from the electrometallurgical furnace production of elemental silicon or an alloy thereof.