Semiconductor circuit device with voltage clamp

Claim 2

A semiconductor circuit device comprising: a semiconductor substrate; a plurality of metal oxide semiconductor (MOS) transistors formed on said semiconductor substrate; a plurality of ground side power source lines formed on said semiconductor substrate; a back gate bias generating circuit, formed between said semiconductor substrate and said ground side power source lines, for supplying a back gate voltage to said semiconductor substrate; and a clamp circuit including an MOS diode formed between said semiconductor substrate and one of said ground side power source lines and connected to said semiconductor substrate and one of said ground side power source lines, said MOS diode turning ON when the potential of said semiconductor substrate exceeds the potential on said ground side power source lines, a current flowing from said semiconductor substrate to said ground side power source lines for clamping a potential of said semiconductor substrate to a predetermined level when said back gate bias generating circuit is not operated.

Claim 3

A semiconductor circuit device as claimed in claim 1, wherein said ground side power source lines are supplied with ground potential.

Claim 4

A semiconductor circuit device comprising: a substrate having a potential; back gate bias generating means, formed on said substrate, for supplying a back gate voltage to said substrate; a first bonding pad, formed on said substrate, for receiving a first power source voltage; a second bonding pad, formed on said substrate, for receiving a second power source voltage, said first power source voltage being greater than said second power source voltage; and clamping means, formed in said substrate and connected between said second bonding pad and said back gate bias generating means, turning ON when the potential of said substrate exceeds that of the second bonding pad, a current flowing from said substrate to said second bonding pad for clamping the potential of said substrate to a predetermined level when said back gate bias generating means is inoperative.

Claim 5

A semiconductor circuit device comprising: a substrate having a potential; back gate bias generating means, formed on said substrate, for supplying a back gate voltage to said substrate; a first bonding pad, formed on said substrate, for receiving a first power source voltage; a second bonding pad, formed on said substrate, for receiving a second power source voltage, said first power source voltage being greater than said second power source voltage; and clamping means, formed in said substrate and connected between said second bonding pad and said back gate bias generating means, turning ON when the potential of said substrate exceeds that of the second bonding pad, a current flowing from said substrate to said second bonding pad for clamping the potential of said substrate to a predetermined level when said back gate bias generating means is inoperative.

Claim 6

A semiconductor device according to claim 3, wherein said clamping means comprises an MOS diode.

Claim 7

A semiconductor device according to claim 3, wherein said second power source voltage is ground level.

Claim 8

A semiconductor circuit device comprising: a semiconductor substrate; a plurality of metal oxide semiconductor (MOS) transistors formed on said semiconductor substrate; a plurality of ground side power source lines formed on said semiconductor substrate; a back gate bias generating circuit, formed between said semiconductor substrate and said ground side power source lines, for supplying a back gate voltage to said semiconductor substrate; and a clamp circuit including an MOS diode comprising an MOS transistor having a source connected to the ground source power supply lines, having a gate, and having a drain, said gate and said drain being connected to said semiconductor substrate, said MOS diode turning ON when the potential of said semiconductor substrate exceeds the potential on said ground side power source lines, a current flowing from said semiconductor substrate to said ground side power source lines for clamping a potential of said semiconductor substrate to a predetermined level when said back gate bias generating circuit is not operated.

Claim 9

A semiconductor circuit device comprising: a semiconductor substrate; a plurality of metal oxide semiconductor (MOS) transistors formed on said semiconductor substrate; a plurality of ground side power source lines formed on said semiconductor substrate; a back gate bias generating circuit, formed between said semiconductor substrate and said ground side power source lines, for supplying a back gate voltage to said semiconductor substrate; and a clamp circuit including an MOS diode comprising an MOS transistor having a source connected to the ground source power supply lines, having a gate, and having a drain, said gate and said drain being connected to said semiconductor substrate, said MOS diode turning ON when the potential of said semiconductor substrate exceeds the potential on said ground side power source lines, a current flowing from said semiconductor substrate to said ground side power source lines for clamping a potential of said semiconductor substrate to a predetermined level when said back gate bias generating circuit is not operated.