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US4862487A
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US
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Solid-state imaging device
Assignee: Hitachi Ltd
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Filing: 1988-04-06
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Granted: 1989-08-29
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Expires: 2008-04-06
Abstract
Abstract Vertical CCD registers constituting parts of an interline type CCD imaging device hold independently the signal charges transferred from photoelectric conversion elements and having different storage durations. Transfer of charge to the vertical CCD registers from the photoelectric conversion element is performed at least twice during one field period. The vertical CCD registers transfer the signal charges of different storage durations independent of one another.
Inventors
- 👤 Haruhisa Ando
- 👤 Masaaki Nakai
- 👤 Hideyuki Ono
- 👤 Toshifumi Ozaki
- 👤 Shinya Ohba
- 👤 Norio Koike
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 23:02
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C27/00; G11C27/04; H; H04; H04N; H04N25/00; H04N25/50; H04N25/53; H04N25/60; H04N25/62; H04N25/625; H04N25/70; H04N25/71; H04N25/711; H04N25/73; H04N25/76; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H04N25/531
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
118 words
A solid-state imaging device, comprising: photoelectric conversion elements arrayed two-dimensionally on a major surface of a semiconductor substrate; vertical charge transfer means for transferring signal charges from the photoelectric conversion elements disposed in vertical arrays; select gate means for taking out the signal charge from said photoelectric conversion elements to said vertical charge transfer means; and horizontal charge transfer means for transferring the signal charges from said vertical charge transfer means to an output end in a predetermined sequence; wherein signal charge transfer from said photoelectric conversion elements to said vertical charge transfer means is carried out at least twice during one field period, said vertical charge transfer means transferring the received signal charges independent of one another.
Claim 2
Dependent Claim
118 words
A solid-state imaging device, comprising: photoelectric conversion elements arrayed two-dimensionally on a major surface of a semiconductor substrate; vertical charge transfer means for transferring signal charges from the photoelectric conversion elements disposed in vertical arrays; select gate means for taking out the signal charge from said photoelectric conversion elements to said vertical charge transfer means; and horizontal charge transfer means for transferring the signal charges from said vertical charge transfer means to an output end in a predetermined sequence; wherein signal charge transfer from said photoelectric conversion elements to said vertical charge transfer means is carried out at least twice during one field period, said vertical charge transfer means transferring the received signal charges independent of one another.
Claim 3
Dependent Claim
21 words
A solid-state imaging device according to claim 1, wherein said vertical charge transfer means are driven by eight-phase driving pulse signal.
Claim 4
Dependent Claim
32 words
A solid-state imaging device according to claim 1, wherein said vertical charge transfer means are driven by four-phase driving pulse signal and includes impurity layers for forming potential barriers beneath associated electrodes.
Claim 5
Dependent Claim
141 words
A solid-state imaging device, comprising: photoelectric conversion elements arrayed in a matrix-like configuration for storing signal charges corresponding to light information; vertical charge transfer means for transferring signal charges from said photoelectric conversion means arrayed in vertical rows, said vertical charge transfer means transferring the signal charges of different storage durations independent of one another during one field period; select gate means for taking out the signal charges from said photoelectric conversion elements to said vertical charge transfer means, the signal charge transfer from said photoelectric conversion element to said vertical charge transfer means being performed at least twice during one field period; horizontal charge transfer means for transferring the signal charges from said vertical charge transfer means to an output end in a predetermined sequence; and means for amplifying and outputting the signal charges from said horizontal charge transfer means.
Claim 6
Dependent Claim
141 words
A solid-state imaging device, comprising: photoelectric conversion elements arrayed in a matrix-like configuration for storing signal charges corresponding to light information; vertical charge transfer means for transferring signal charges from said photoelectric conversion means arrayed in vertical rows, said vertical charge transfer means transferring the signal charges of different storage durations independent of one another during one field period; select gate means for taking out the signal charges from said photoelectric conversion elements to said vertical charge transfer means, the signal charge transfer from said photoelectric conversion element to said vertical charge transfer means being performed at least twice during one field period; horizontal charge transfer means for transferring the signal charges from said vertical charge transfer means to an output end in a predetermined sequence; and means for amplifying and outputting the signal charges from said horizontal charge transfer means.
Claim 7
Dependent Claim
34 words
A solid-state imaging device according to claim 1, further including means for eliminating useless charges having no contribution to generation of image signal from the signal charges transferred from said vertical charge transfer means.
Claim 8
Dependent Claim
30 words
A solid-state imaging device according to claim 1, wherein said horizontal charge transfer means transfers the signal charges of different storage durations to said output end independent of one another.
Claim 9
Dependent Claim
21 words
A solid-state imaging device according to claim 4, wherein said vertical charge transfer means are driven by eight-phase driving pulse signal.
Claim 10
Dependent Claim
32 words
A solid-state imaging device according to claim 4, wherein said vertical charge transfer means are driven by four-phase driving pulse signal and includes impurity layers for forming potential barriers beneath associated electrodes.
Claim 11
Dependent Claim
188 words
A solid-state imaging device, comprising: photoelectric conversion elements arrayed twodimensionally on a major surface of a semiconductor substrate; vertical charge transfer means for transferring signal charges from the photoelectric conversion elements disposed in vertical arrays; select gate means for taking out the signal charge from said photoelectric conversion elements to said vertical charge transfer means; and horizontal charge transfer means for transferring the signal charges from said vertical charge transfer means to an output end in a predetermined sequence; wherein said vertical charge transfer means performs the following operations during one field period: (a) read-out of first signal charges from all of said photoelectric conversion elements; (b) forming in said vertical charge transfer means portions for holding said first signal charges read out and blank portions for holding other charges; (c) sequential transferring of said first signal charges to said horizontal charge transfer means; (d) read-out of second signal charges from said photoelectric conversion elements to said blank portions at a given time in the course of said transfer of said first signal charges; and (e) transferring of said first and second signal charges independent of each other.
Claim 12
Dependent Claim
188 words
A solid-state imaging device, comprising: photoelectric conversion elements arrayed twodimensionally on a major surface of a semiconductor substrate; vertical charge transfer means for transferring signal charges from the photoelectric conversion elements disposed in vertical arrays; select gate means for taking out the signal charge from said photoelectric conversion elements to said vertical charge transfer means; and horizontal charge transfer means for transferring the signal charges from said vertical charge transfer means to an output end in a predetermined sequence; wherein said vertical charge transfer means performs the following operations during one field period: (a) read-out of first signal charges from all of said photoelectric conversion elements; (b) forming in said vertical charge transfer means portions for holding said first signal charges read out and blank portions for holding other charges; (c) sequential transferring of said first signal charges to said horizontal charge transfer means; (d) read-out of second signal charges from said photoelectric conversion elements to said blank portions at a given time in the course of said transfer of said first signal charges; and (e) transferring of said first and second signal charges independent of each other.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |