Abstract A thin-film transistor comprising an insulating substrate; an opaque metal gate electrode disposed on a portion of said insulating substrate; a gate insulating layer disposed on said insulating substrate including said gate electrode; an a-Si semiconductor film disposed on the portion of said gate insulating layer, said a-Si semiconductor film having been formed to attain self-alignment with respect to said gate electrode; a-Si contact films constituting source and drain regions, respectively, with a gap therebetween disposed on said a-Si semiconductor film, the outer end of each of said contact films being formed to attain self-alignment with respect to said gate electrode; source and drain electrodes, respectively, disposed on said source and drain regions, the thickness of each of said a-Si semiconductor film and said a-Si contact film being 100 Å or more and the total amount of thicknesses thereof being 1,000 Å or less.
A thin-film transistor comprising an insulating substrate; an opaque metal gate electrode disposed on a portion of said insulating substrate; a gate insulating layer disposed on said insulating substrate including said gate electrode; an a-Si semiconductor film disposed on the portion of said gate insulating layer, said a-Si semiconductor film having been formed to attain self-alignment with respect to said gate electrode; a-Si contact films constituting source and drain regions, respectively, with a gap therebetween disposed on said a-Si semiconductor film, the outer end of each of said contact films being formed to attain self-alignment with respect to said gate electrode; souce and drain electrodes, respectively, disposed on said source and drain regions, the thickness of each of said a-Si semiconductor film and said a-Si contact film being 100 Å or more and the total amount of thicknesses thereof being 1,000 Å or less.
Claim 2
Dependent Claim
144 words
A thin-film transistor comprising an insulating substrate; an opaque metal gate electrode disposed on a portion of said insulating substrate; a gate insulating layer disposed on said insulating substrate including said gate electrode; an a-Si semiconductor film disposed on the portion of said gate insulating layer, said a-Si semiconductor film having been formed to attain self-alignment with respect to said gate electrode; a-Si contact films constituting source and drain regions, respectively, with a gap therebetween disposed on said a-Si semiconductor film, the outer end of each of said contact films being formed to attain self-alignment with respect to said gate electrode; souce and drain electrodes, respectively, disposed on said source and drain regions, the thickness of each of said a-Si semiconductor film and said a-Si contact film being 100 Å or more and the total amount of thicknesses thereof being 1,000 Å or less.
Claim 3
Dependent Claim
26 words
A thin-film transistor according to claim 1, wherein a protective insulating film is positioned between the a-Si semiconductor film and each of the a-Si contact films.
Claim 4
Dependent Claim
22 words
A thin-film transistor according to claim 1, wherein each of the a-Si contact films is directly positioned on said a-Si semiconductor film.