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US4861732A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for removing an ion-implanted organic resin layer during fabrication of semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1988-09-13
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Granted: 1989-08-29
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Expires: 2008-09-13
Abstract
Abstract In the present invention, a method for removing an organic resin material layer reduces residual substances upon removing an ion-implanted organic resin material layer. Inorganic contaminants adhered to the surface of organic resin material layer during ion-implantation are removed by etching, and thereafter, the layer is decomposed and removed by plasma irradiation of the organic resin material layer. An alkaline etchant is used for etching off inorganic contaminants.
Inventors
- 👤 Shuzo Fujimura
- 👤 Junichi Konno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:29
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/422; G03F7/425; H; H10; H10P; H10P32/00; H10P32/20; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; Y; Y10; Y10S; Y10S148/00; Y10S148/083
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
93 words
A method of making semiconductor devices, comprising the steps of: forming an organic material layer on a substrate, the organic material layer being made of an organic resin capable of being removed by a plasma; implanting ions in the organic material layer, thereby forming an inorganic contamination layer on a surface of the organic material layer; etching off the inorganic contamination layer with an etching solution; and after etching, exposing the substrate with the organic material layer to a plasma capable of removing the organic material layer by decomposition of the organic material.
Claim 2
Independent Claim
93 words
A method of making semiconductor devices, comprising the steps of: forming an organic material layer on a substrate, the organic material layer being made of an organic resin capable of being removed by a plasma; implanting ions in the organic material layer, thereby forming an inorganic contamination layer on a surface of the organic material layer; etching off the inorganic contamination layer with an etching solution; and after etching, exposing the substrate with the organic material layer to a plasma capable of removing the organic material layer by decomposition of the organic material.
Claim 3
Dependent Claim
18 words
A method of making semiconductor devices according to claim 1, further comprising stirring the etching solution during etching.
Claim 4
Dependent Claim
17 words
A method of making semiconductor devices according to claim 2, further comprising rinsing the substrate after etching.
Claim 5
Dependent Claim
21 words
A method of making semiconductor devices according to claim 3, wherein the etching step comprises etching with an alkaline etching solution.
Claim 6
Dependent Claim
23 words
A method of making semiconductor devices according to claim 4, wherein the etching step comprises etching with a solution which includes ammonium hydroxide.
Claim 7
Dependent Claim
23 words
A method of making semiconductor devices according to claim 4, wherein the etching step comprises etching with a solution which includes potassium hydroxide.
Claim 8
Dependent Claim
26 words
A method of making semiconductor devices according to claim 1, wherein the exposing step comprises exposing the organic material layer to a plasma which includes oxygen.
Claim 9
Dependent Claim
26 words
A method of making semiconductor devices according to claim 1, wherein the exposing step comprises exposing the organic material layer to a plasma which includes hydrogen.
Claim 10
Dependent Claim
20 words
A method of making semiconductor devices according to claim 1, wherein the forming step comprises forming an organic photoresist layer.
Claim 11
Dependent Claim
30 words
A method of making semiconductor devices according to claim 1, wherein the step of implanting ions comprises implanting at a dose rate of at least 10 14 /cm 2 .
Claim 12
Independent Claim
63 words
A method for removing from a substrate an organic resin layer having an inorganic contamination layer formed by ion-implantation of the organic resin, the method comprising: etching off the inorganic contamination layer with an etching solution; and after etching, exposing the substrate with the organic material layer to a plasma capable of removing the organic material layer by decomposition of the organic material.
Claim 13
Independent Claim
63 words
A method for removing from a substrate an organic resin layer having an inorganic contamination layer formed by ion-implantation of the organic resin, the method comprising: etching off the inorganic contamination layer with an etching solution; and after etching, exposing the substrate with the organic material layer to a plasma capable of removing the organic material layer by decomposition of the organic material.
Claim 14
Dependent Claim
18 words
A method of making semiconductor devices according to claim 11, further comprising stirring the etching solution during etching.
Claim 15
Dependent Claim
17 words
A method of making semiconductor devices according to claim 12, further comprising rinsing the substrate after etching.
Claim 16
Dependent Claim
21 words
A method of making semiconductor devices according to claim 13, wherein the etching step comprises etching with an alkaline etching solution.
Claim 17
Dependent Claim
23 words
A method of making semiconductor devices according to claim 14, wherein the etching step comprises etching with a solution which includes ammonium hydroxide.
Claim 18
Dependent Claim
23 words
A method of making semiconductor devices according to claim 15, wherein the etching step comprises etching with a solution which includes potassium hydroxide.
Claim 19
Dependent Claim
22 words
A method of making semiconductor devices according to claim 11, wherein the exposing step comprises exposing to a plasma which includes oxygen.
Claim 20
Dependent Claim
22 words
A method of making semiconductor devices according to claim 11, wherein the exposing step comprises exposing to a plasma which includes hydrogen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |