Patent US4860077A successfully refreshed from Google Patents.
US4860077A
Expired / Lapsed
US
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Vertical semiconductor device having a sidewall emitter
Assignee: Motorola Solutions Inc
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Filing: 1987-09-28
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Granted: 1989-08-22
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Expires: 2007-09-28
Abstract
Abstract A low capacitance, high performance semiconductor device is described having a sidewall emitter wherein the emitter width is relatively small (approximately 0.5 micrometers). This enables a small emitter-base interface which reduces capacitance. Additionally, the regions of the base and collector near their interface are lightly doped so that collector-base capacitance is greatly reduced.
Inventors
- 👤 Robert H. Reuss
- 👤 Kevin L. McLaughlin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D10/00; H10D10/40; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
140 words
A vertical semiconductor device having a sidewall emitter comprising: a substrate; a first dielectric layer on said substrate; a first polycrystalline semiconductor region on said first dielectric layer, said first polycrystalline semiconductor region including a doped portion for contacting an emitter and acting as a diffusion source for said emitter; a second dielectric layer on said first polycrystalline semiconductor region; a first epitaxial region extending from said substrate through said first and second dielectric layers and said first polycrystalline semiconductor region, said epitaxial region includes an emitter, a base and a collector portion disposed beneath said base portion, and wherein said emitter portion contacts said portion of said first polycrystalline semiconductor region at a location between said first and second dielectric layers; and a plurality of contacts, said contacts being electrically coupled to said emitter, said base and said collector.
Claim 2
Dependent Claim
140 words
A vertical semiconductor device having a sidewall emitter comprising: a substrate; a first dielectric layer on said substrate; a first polycrystalline semiconductor region on said first dielectric layer, said first polycrystalline semiconductor region including a doped portion for contacting an emitter and acting as a diffusion source for said emitter; a second dielectric layer on said first polycrystalline semiconductor region; a first epitaxial region extending from said substrate through said first and second dielectric layers and said first polycrystalline semiconductor region, said epitaxial region includes an emitter, a base and a collector portion disposed beneath said base portion, and wherein said emitter portion contacts said portion of said first polycrystalline semiconductor region at a location between said first and second dielectric layers; and a plurality of contacts, said contacts being electrically coupled to said emitter, said base and said collector.
Claim 3
Dependent Claim
24 words
The device of claim 1 further including a second epitaxial region electrically coupled to the collector by a doped buried layer in the substrate.
Claim 4
Dependent Claim
32 words
The device of claim 1 further comprising: a second polycrystalline semiconductor region on the first dielectric layer; and a third dielectric layer disposed between the first and said second polycrystalline semiconductor regions.
Claim 5
Dependent Claim
20 words
The device of claim 3 wherein said second polycrystalline semiconductor layer contacts the collector portion of said first epitaxial region.
Claim 6
Dependent Claim
20 words
The device of claim 3 wherein the dielectric layers are comprised of oxide, nitride or combinations of oxide and nitride.
Claim 7
Dependent Claim
13 words
The device of claim 5 wherein the dielectric layers comprise SiO 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-21 | 1993-02-20 | 1993-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-21 | 1997-02-20 | 1997-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-21 | 2001-02-20 | 2001-08-22 | $7700.00 | Window Closed / Lapsed |