US4860076A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image device
Assignee: Fujifilm Holdings Corp
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Filing: 1988-11-29
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Granted: 1989-08-22
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Expires: 2008-11-29
Abstract
Abstract A solid state imaging device comprises a transparent electrode, a photoconductive layer, and a plurality of scanning circuits for consecutively selecting signals in the photoconductive layer. The photoconductive layer is formed of amorphous semiconductor comprising amorphous silicon as the major component and further containing an element serving to lower the capture level within the energy gap and a trace amount of chalcogen element as a chemical modifier.
Inventors
- 👤 Masatoshi Tabei
- 👤 Mitsuru Ikeda
- 👤 Yosuke Nakajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:20
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
76 words
In a solid state imaging device, an arrangement which comprises a photoconductive layer of amorphous semiconductor containing amorphous silicon as the major component, an element for reducing capture level within the energy gap and up to 0.1 atomic percent of selenium as a chemical modifier, said layer having disposed on the light-entrance side thereof a transparent electrode, and a plurality of scanning circuits for consecutively selecting signals of the photoconductive layer being disposed beneath that layer.
Claim 2
Dependent Claim
76 words
In a solid state imaging device, an arrangement which comprises a photoconductive layer of amorphous semiconductor containing amorphous silicon as the major component, an element for reducing capture level within the energy gap and up to 0.1 atomic percent of selenium as a chemical modifier, said layer having disposed on the light-entrance side thereof a transparent electrode, and a plurality of scanning circuits for consecutively selecting signals of the photoconductive layer being disposed beneath that layer.
Claim 3
Dependent Claim
30 words
In a solid state imaging device, an arrangement as defined in claim 1 wherein said amorphous semiconductor further contains a III group element as a doping element for p-type conduction.
Claim 4
Dependent Claim
30 words
In a solid state imaging device, an arrangement as defined in claim 1, wherein said amorphous semiconductor further contains a V group element as a doping element for n-type conduction.
Claim 5
Dependent Claim
39 words
In a solid state imaging device, an arrangement as defined in claim 1, wherein said amorphous semiconductor contains at least one element for reducing capture level within the energy gap selected from the group consisting of hydrogen and fluorine.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-21 | 1993-02-20 | 1993-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-21 | 1997-02-20 | 1997-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-21 | 2001-02-20 | 2001-08-22 | $7700.00 | Window Closed / Lapsed |