US4860068A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and methods of making such devices
Assignee: Nokia Bell Labs
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Filing: 1988-01-27
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Granted: 1989-08-22
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Expires: 2008-01-27
Abstract
Abstract Single GaAs quantum well or single GaAs active layer or single reverse interface structures with Al x Ga 1-x As barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.
Inventors
- 👤 Arthur C. Gossard
- 👤 Robert C. Miller
- 👤 Pierre M. Petroff
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:51
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
138 words
A semiconductor heterostructure device comprising a layered structure on a substrate, said structure being adapted for electron-hole recombination, light absorption, or carrier transport in a single, homogeneous semiconductor layer which comprises GaAs and which here is designated as active layer, said structure further comprising a first semiconductor cladding layer which comprises Al x Ga 1-x As, said first cladding layer being adjacent to said active layer and having a thickness less than 1500 Angstroms, a semiconductor layer which comprises GaAs and which here is designated as getter-smoothing layer, said getter-smoothing layer being adjacent to said first cladding layer, and said getter-smoothing layer having a thickness in the range from 10 to 100 Angstroms, and a second semiconductor cladding layer which comprises Al x Ga 1-x As, said second cladding layer being between said substrate and said getter-smoothing layer.
Claim 2
Dependent Claim
138 words
A semiconductor heterostructure device comprising a layered structure on a substrate, said structure being adapted for electron-hole recombination, light absorption, or carrier transport in a single, homogeneous semiconductor layer which comprises GaAs and which here is designated as active layer, said structure further comprising a first semiconductor cladding layer which comprises Al x Ga 1-x As, said first cladding layer being adjacent to said active layer and having a thickness less than 1500 Angstroms, a semiconductor layer which comprises GaAs and which here is designated as getter-smoothing layer, said getter-smoothing layer being adjacent to said first cladding layer, and said getter-smoothing layer having a thickness in the range from 10 to 100 Angstroms, and a second semiconductor cladding layer which comprises Al x Ga 1-x As, said second cladding layer being between said substrate and said getter-smoothing layer.
Claim 3
Dependent Claim
25 words
The device of claim 1, said active layer and said getter-smoothing layer having narrow bandgaps and said first and second cladding layers having wide bandgaps.
Claim 4
Dependent Claim
20 words
The device of claim 1, said first cladding layer having a thickness in the range from 50 to 500 Angstroms.
Claim 5
Dependent Claim
25 words
The device of claim 1, said structure further comprising a third semiconductor cladding layer adjacent to said active layer on the side opposite said substrate.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-21 | 1993-02-20 | 1993-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-21 | 1997-02-20 | 1997-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-21 | 2001-02-20 | 2001-08-22 | $7700.00 | Window Closed / Lapsed |