Patent US4859554A successfully refreshed from Google Patents.
US4859554A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multilayer photoreceptor
Assignee: Konica Minolta Inc
•
Filing: 1988-03-28
•
Granted: 1989-08-22
•
Expires: 2008-03-28
Abstract
Abstract Disclosed is a photoreceptor which comprises a charge generation layer composed of at least one compound selected from the group consisting of amorphous hydrogenated silicon, amorphous fluorinated silicon and amorphous hydrofluorinated silicon, a charge transport layer formed on a lower surface of said charge generation layer and composed of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrofluorinated silicon nitride, amorphous hydrogenated silicon carbide, amorphous fluorinated silicon carbide and amorphous hydrofluorinated silicon carbide, and a substrate, wherein said charge transport layer contains oxygen within the range of from 50 atomic ppm to 5 atomic % based on the total atoms of silicon, nitrogen and carbon. The photoreceptor of this invention can be improved in the electrophotographic characteristics greatly with reduction of dependency on temperature by making the oxygen content in the charge transport layer 50 atomic ppm to 5 atomic %.
Inventors
- 👤 Toshinori Yamazaki
- 👤 Eiichi Sakai
- 👤 Tatsuo Nakanishi
- 👤 Hiroyuki Nomori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:18
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
177 words
A photoreceptor comprising a charge generation layer consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon, amorphous fluorinated silicon and amorphous hydrofluorinated silicon; a charge transport layer formed on a lower surface of said charge generation layer and consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrofluorinated silicon nitride, amorphous hydrogenated silicon carbide, amorphous fluorinated silicon carbide and amorphous hydrofluorinated silicon carbide; a charge blocking layer; a surface modifying layer; and a substrate, wherein said charge transport layer contains (i) from 50 atomic ppm to 5 atomic % oxygen and (ii) from 5 atomic % to 30 atomic % of at least one element selected from carbon and nitrogen based on the total atoms of silicon, nitrogen and carbon and wherein the charge transport layer further contains at least one element of IIIa group of the periodic table in an amount up to 50 atomic ppm based on the total amount of silicon, nitrogen and carbon.
Claim 2
Dependent Claim
177 words
A photoreceptor comprising a charge generation layer consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon, amorphous fluorinated silicon and amorphous hydrofluorinated silicon; a charge transport layer formed on a lower surface of said charge generation layer and consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrofluorinated silicon nitride, amorphous hydrogenated silicon carbide, amorphous fluorinated silicon carbide and amorphous hydrofluorinated silicon carbide; a charge blocking layer; a surface modifying layer; and a substrate, wherein said charge transport layer contains (i) from 50 atomic ppm to 5 atomic % oxygen and (ii) from 5 atomic % to 30 atomic % of at least one element selected from carbon and nitrogen based on the total atoms of silicon, nitrogen and carbon and wherein the charge transport layer further contains at least one element of IIIa group of the periodic table in an amount up to 50 atomic ppm based on the total amount of silicon, nitrogen and carbon.
Claim 3
Dependent Claim
34 words
A photoreceptor of claim 1, wherein said charge transport layer contains oxygen within the range of from 50 atomic ppm to 500 atomic ppm based on the total atoms of silicon, nitrogen and carbon.
Claim 4
Dependent Claim
93 words
A photoreceptor of claim 1, wherein a charge blocking layer, which consists essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrofluorinated silicon nitride, amorphous hydrogenated silicon carbide, amorphous fluorinated silicon carbide and amorphous hydrofluorinated silicon carbide and which contains elements of IIIa group of the periodic table within the range of from 100 atomic ppm to 5000 atomic ppm based on the total amount of silicon, nitrogen and carbon, is formed on the lower surface of said charge transport layer.
Claim 5
Dependent Claim
35 words
A photoreceptor of claim 3, wherein said charge blocking layer further contains oxygen within the range of from 50 atomic ppm to 5 atomic % based on the total atoms of silicon, nitrogen and carbon.
Claim 6
Dependent Claim
42 words
A photoreceptor of claim 4, wherein said charge transport layer contains boron doped by glow discharge decomposition under the condition that a flow rate of B 2 H 6 /SiH 4 is in the range of from 1 ppm to 50 ppm.
Claim 7
Dependent Claim
53 words
A photoreceptor of claim 3, wherein said charge blocking layer contains boron doped by glow discharge decomposition under the condition that a flow rate of B 2 H 6 /SiH 4 is in the range of from 100 ppm to 5,000 ppm, is formed on the lower surface of said charge transport layer.
Claim 8
Dependent Claim
68 words
A photoreceptor of claim 1, wherein said charge transport layer consist essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride and amorphous hydrofluorinated silicon nitride, and the content of nitrogen of said charge transport layer is within the range of from 5 atomic % to 30 atomic % based on the total amount of silicon and nitrogen.
Claim 9
Dependent Claim
68 words
A photoreceptor of claim 1, wherein said charge transport layer consists essentially of at least one compounds selected from the group consisting of amorphous hydrogenated silicon carbide, amorphous fluorinated silicon carbide and amorphous hydrofluorinated silicon carbide, and the content of carbon of said charge transport layer is within the range of from 5 atomic % to 30 atomic % based on the total amount of silicon and carbon.
Claim 10
Dependent Claim
75 words
A photoreceptor of claim 1, wherein a surface modifying layer which consists essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride and amorphous hydrofluorinated silicon nitride, and the content of nitrogen is within the range of from 10 atomic % to 70 atomic % based on the total amount of silicon and nitrogen, is formed on the upper surface of said charge generation layer.
Claim 11
Dependent Claim
35 words
A photoreceptor of claim 9, wherein said surface modifying layer further contains oxygen within the range of from 1 atomic % to 50 atomic % based on the total amount of silicon, nitrogen and oxygen.
Claim 12
Dependent Claim
75 words
A photoreceptor of claim 1, wherein a surface modifying layer which consists essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon carbide, amorphous fluorinated silicon carbide and amorphous hydrofluorinated silicon carbide, and the content of carbon is within the range of from 10 atomic % to 70 atomic % based on the total amount of silicon and carbon, is formed on the upper surface of said charge generation layer.
Claim 13
Dependent Claim
35 words
A photoreceptor of claim 11, wherein said surface modifying layer further contains oxygen within the range of from 1 atomic % to 50 atomic % based on the total amount of silicon, carbon and oxygen.
Claim 14
Dependent Claim
23 words
A photoreceptor of claim 1, wherein said charge generation layer has the thickness within the range of from 1 μm to 10 μm.
Claim 15
Dependent Claim
23 words
A photoreceptor of claim 1, wherein said charge transport layer has the thickness within the range of from 10 μm to 30 μm.
Claim 16
Dependent Claim
23 words
A photoreceptor of claim 9, wherein said surface modifying layer has the thickness within the range of from 400 Å to 5,000 Å.
Claim 17
Dependent Claim
23 words
A photoreceptor of claim 3, wherein said charge blocking layer has the thickness within the range of from 400 Å to 2 μm.
Claim 18
Dependent Claim
42 words
A photoreceptor of claim 1, wherein the contents of hydrogen of said charge generation layer and said charge transport layer are within the range of from 1 atomic % to 40 atomic % based on the total amount of silicon and hydrogen.
Claim 19
Dependent Claim
37 words
A photoreceptor of claim 3, wherein the content of hydrogen of said charge blocking layer is within the range of from 1 atomic % to 40 atomic % based on the total amount of silicon and hydrogen.
Claim 20
Dependent Claim
37 words
A photoreceptor of claim 9, wherein the content of hydrogen of said surface modifying layer is within the range of from 1 atomic % to 40 atomic % based on the total amount of silicon and hydrogen.
Claim 21
Dependent Claim
42 words
A photoreceptor of claim 1, wherein the contents of fluorine of said charge generation layer and said charge transport layer are within the range of from 0.01 atomic % to 20 atomic % based on the total amount of silicon and fluorine.
Claim 22
Dependent Claim
37 words
A photoreceptor of claim 3, wherein the content of fluorine of said charge blocking layer is within the range of from 0.01 atomic % to 20 atomic % based on the total amount of silicon and fluorine.
Claim 23
Dependent Claim
37 words
A photoreceptor of claim 9, wherein the content of fluorine of said surface modifying layer is within the range of from 0.01 atomic % to 20 atomic % based on the total amount of silicon and fluorine.
Claim 24
Dependent Claim
23 words
A photoreceptor of claim 11, wherein said surface modifying layer has the thickness within the range of from 400 Å to 5,000 Å.
Claim 25
Dependent Claim
37 words
A photoreceptor of claim 11, wherein the content of hydrogen of said surface modifying layer is within the range of from 1 atomic % to 40 atomic % based on the total amount of silicon and hydrogen.
Claim 26
Dependent Claim
37 words
A photoreceptor of claim 11, wherein the content of fluorine of said surface modifying layer is within the range of from 0.01 atomic % to 20 atomic % based on the total amount of silicon and fluorine.
Claim 27
Dependent Claim
18 words
A photoreceptor of claim 1 wherein said charge transport layer contains 9 atomic % of carbon or nitrogen.
Claim 28
Dependent Claim
18 words
A photoreceptor of claim 1 wherein said charge transport layer contains 12 atomic % of carbon or nitrogen.
Claim 29
Dependent Claim
18 words
A photoreceptor of claim 1 wherein said charge transport layer contains 15 atomic % of carbon or nitrogen.
Claim 30
Dependent Claim
13 words
A photoreceptor of claim 28 wherein said charge transport layer contains 15% carbon.
Claim 31
Dependent Claim
169 words
A photoreceptor comprising a charge generation layer consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon, amorphous fluorinated silicon and amorphous hydrofluorinated silicon; a charge transport layer formed on a lower surface of said charge generation layer and consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrogenated silicon carbide and amorphous fluorinated silicon carbide; a charge blocking layer; a surface modifying layer; and a substrate, wherein said charge transport layer contains (i) from 50 atomic ppm to 5 atomic % oxygen and (ii) from 5 atomic % to 30 atomic % of at lest one element selected form carbon and nitrogen based on the total atoms of silicon, nitrogen and carbon and wherein the charge transport layer further contains at least one element of IIIa group of the periodic table in an amount up to 50 atomic ppm based on the total amount of silicon, nitrogen and carbon.
Claim 32
Dependent Claim
169 words
A photoreceptor comprising a charge generation layer consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon, amorphous fluorinated silicon and amorphous hydrofluorinated silicon; a charge transport layer formed on a lower surface of said charge generation layer and consisting essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrogenated silicon carbide and amorphous fluorinated silicon carbide; a charge blocking layer; a surface modifying layer; and a substrate, wherein said charge transport layer contains (i) from 50 atomic ppm to 5 atomic % oxygen and (ii) from 5 atomic % to 30 atomic % of at lest one element selected form carbon and nitrogen based on the total atoms of silicon, nitrogen and carbon and wherein the charge transport layer further contains at least one element of IIIa group of the periodic table in an amount up to 50 atomic ppm based on the total amount of silicon, nitrogen and carbon.
Claim 33
Dependent Claim
155 words
The photoreceptor of claim 30 wherein said surface modifying layer has the thickness within the range of from 400 Å to 5,000 Å; said charge generation layer has a thickness within the range of from 1 μm to 10 μm; said charge transport layer has the thickness within the range of from 10 μm to 30 μm; and said photoreceptor further comprises a charge blocking layer of 400 Å to 2 μm thickness, formed on the lower surface of said charge transport layer and which consists essentially of at least one compound selected from the group consisting of amorphous hydrogenated silicon nitride, amorphous fluorinated silicon nitride, amorphous hydrogenated silicon carbide and amorphous fluorinated silicon carbide; oxygen within the range of from 50 ppm to 5% based on the total atoms of silicon, nitrogen and carbon; and doped with 100 to 5000 at ppm of an element belonging to the group IIIa of the periodic table.
Claim 34
Dependent Claim
98 words
The photoreceptor of claim 31 wherein said surface modifying layer has a thickness of 0.15 to 5 μm and consists of amorphous hydrogenated silicon carbide; said charge generation layer has a thickness of 1 to 5 μm and consists of amorphous hydrogenated silicon; said charge transport layer has a thickness of 10-15 μm and consists essentially of amorphous hydrogenated silicon carbide doped with boron as said group IIIa element; said charge blocking layer has a thickness of 400 Å to 2 μm and consists essentially of amorphous hydrogenated silicon carbide doped with boron as said group IIIa element.
References Cited (Backward Citations)
US4394425A
Cited
US4394426A
Cited
US4536460A
Cited
US4460670A
Cited
US4460669A
Cited
US4510224A
Cited
JPS5967540A
Cited
JPS59119358A
Cited
DE3412184A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-21 | 1993-02-20 | 1993-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-21 | 1997-02-20 | 1997-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-21 | 2001-02-20 | 2001-08-22 | $7700.00 | Window Closed / Lapsed |