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US4857907A
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US
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Liquid-crystal display device
Assignee: Sharp Corp
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Filing: 1987-04-28
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Granted: 1989-08-15
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Expires: 2007-04-28
Abstract
Abstract A liquid-crystal display device comprising thin-film transistors arrayed in a matrix, wherein each of said thin-film transistors comprises an insulating substrate, a gate electrode disposed on said insulating substrate, a first insulating film covering said gate electrode, an a-Si semiconductor film disposed on said first insulating film, a second insulating film disposed on said a-Si semiconductor film, a p-doped n+-amorphous Si film forming both a source and a drain on said a-Si semiconductor film and said second insulating film, a third insulating film covering said p-doped n+-amorphous Si film, except for a part of said p-doped n+-amorphous Si film, and said a-Si semiconductor film, a source electrode and a drain electrode forming junctions with said part of the p-doped n+-amorphous Si film and covering said third insulating film, and a picture-element electrode, a part of which is superposed on said drain electrode.
Inventors
- 👤 Mitsuhiro Koden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:28
CPC Classifications
H; H10; H10D; H10D86/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
154 words
A liquid-crystal display device comprising thin-film transistors arrayed in a matrix, wherein each of said thin-film transistors comprises: an insulating substrate; a gate electrode disposed on said insulating substrate; a first insulating film covering said gate electrode; an amorphous Si semiconductor film disposed on said first insulating film; a second insulating film disposed on said amorphous Si semiconductor film; a p-doped n + -amorphous Si film forming both a source and a drain on said amorphous Si semiconductor film and said second insulating film; a third insulating film covering said p-doped n + -amorphous Si film, except for a part of said p-doped n + -amorphous Si film, and said amorphous Si semiconductor film; a source electrode and a drain electrode forming junctions with said part of the p-doped n + -amorphous Si film and covering said third insulating film; and a picture-element electrode, a part of which is superposed on said drain electrode.
Claim 2
Dependent Claim
154 words
A liquid-crystal display device comprising thin-film transistors arrayed in a matrix, wherein each of said thin-film transistors comprises: an insulating substrate; a gate electrode disposed on said insulating substrate; a first insulating film covering said gate electrode; an amorphous Si semiconductor film disposed on said first insulating film; a second insulating film disposed on said amorphous Si semiconductor film; a p-doped n + -amorphous Si film forming both a source and a drain on said amorphous Si semiconductor film and said second insulating film; a third insulating film covering said p-doped n + -amorphous Si film, except for a part of said p-doped n + -amorphous Si film, and said amorphous Si semiconductor film; a source electrode and a drain electrode forming junctions with said part of the p-doped n + -amorphous Si film and covering said third insulating film; and a picture-element electrode, a part of which is superposed on said drain electrode.
Claim 3
Dependent Claim
38 words
A liquid-crystal display device according to claim 1, wherein bus bars connected to said gate electrode and bus bars connected to said source electrode are connected by a short ring of a p-doped n + -amorphous Si film.
Claim 4
Dependent Claim
25 words
A liquid-crystal display device according to claim 2, wherein the resistance between the gate bus bars is different from that between the source bus bars.
Claim 5
Dependent Claim
25 words
A liquid-crystal display device according to claim 3, wherein the resistance between the gate bus bars is lower than that between the source bus bars.
Claim 6
Dependent Claim
30 words
A liquid-crystal display device according to claim 2, wherein the portions on which the source bus bars are disposed have said second insulating film and said amorphous Si semiconductor film.
Claim 7
Dependent Claim
74 words
A liquid-crystal display device according to claim 1, wherein the thin-film transistor further comprises a fourth insulating film disposed over the entire surface of the substrate including the source electrode and the drain electrode, said fourth insulating film having a hole in the portion thereof positioned above said drain electrode, and said picture-element electrode attaining self-alignment with respect to said gate and source electrodes and being connected to said drain electrode through the hole.
Claim 8
Dependent Claim
30 words
A liquid-crystal display device according to claim 3, wherein the portions on which the source bus bars are disposed have said second insulating film and said amorphous Si semiconductor film.
Claim 9
Dependent Claim
30 words
A liquid-crystal display device according to claim 4, wherein the portions on which the source bus bars are disposed have said second insulating film and said amorphous Si semiconductor film.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-14 | 1993-02-13 | 1993-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-14 | 1997-02-13 | 1997-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-14 | 2001-02-13 | 2001-08-15 | $7700.00 | Window Closed / Lapsed |