High K dielectric composition for use in multilayer ceramic capacitors having copper internal electrodes

Claim 2

A High K Dielectric Composition having a dielectric constant above 5,000 consisting essentially of a donor- and acceptor-doped BaTiO 3 which is free of fluorides and reducible oxides or their precursors having an intergranular phase of flux containing both glass-forming and glass-modifying ions, characterized stoichiometrically by the following criteria: (a) the ratio of A site ions to B site ions in the doped BaTiO 3 , ##EQU4## wherein N A =number of divalent A site ions; N B =number of tetravalent B site ions; N C =number of acceptor ions; and N D =number of donor ions of charge 3+ or 5+. (b) the ratio of donor ions (ND) to total cations (N T ), N D /N T =0.5-3.0%; (c) N C /N D is at least 0.20; (d) the ratio of glass-forming ions (N G ) to total cations, N G /N T =0.5-3.5%; and (e) The ratio of the glass-modifying ions, N M , to the total number of cations (N T ), N M /N T =1.5-5.0%.

Claim 3

The dielectric composition of claim 1 in which the glass-forming ions are selected from B 3+ , Si 4+ , Ge 4+ , P 5+ and mixtures thereof.

Claim 4

The dielectric composition of claim 1 in which the glass-modifying ions are selected from Li + and Zn 2+ , and mixtures thereof.

Claim 5

The dielectric composition of claim 1 in which the divalent A site ions are selected from Ba 2+ , Ca 2+ , Sr 2+ , Mg 2+ , and mixtures thereof.

Claim 6

The dielectric composition of claim 1 in which the tetravalent B site ions are selected from Ti 4+ , Zr 4+ and mixtures thereof.

Claim 7

The dielectric composition of claim 1 in which the donor ions are selected from Nb 5+ , Ta 5+ , trivalent rare earth ions and mixtures thereof.

Claim 8

The dielectric composition of claim 1 in which the donor compensating ions are selected from Mn 2+ , Mn 3+ , Ni 2+ , Cr 3+ , Co 2+ , Co 3+ and mixtures thereof.

Claim 9

A composition for preparing donor- and acceptor-doped BaTiO 3 having an intergranular layer of flux containing both glass-forming and glass-modifying ions by firing in a low oxygen-containing atmosphere consisting essentially of an admixture of finely divided particles of oxides of BaTiO 3 , oxides of glass-forming cations, oxides of glass-modifying cations, A site dopant oxide(s), B site dopant oxide(s), oxides of donor ions and oxides of donor compensating ions, characterized stoichiometrically by the following criteria: (a) the molar ratio of A site oxide(s) to B site oxide(s) is 1.02-1.10; (b) the molar ratio of donor oxide(s) to total oxide(s) is 0.5 to 3.0%; (c) the molar ratio of donor-compensating oxide(s) to donor oxide(s) is at least 0.20; (d) the molar ratio of glass-forming oxide(s) to total oxide(s) is 0.5 to 3.5%; and (e) the molar ratio of the glass-modifying oxide(s) to the total oxide(s) is 1.5-5.0%.

Claim 10

A composition for preparing donor- and acceptor-doped BaTiO 3 having an intergranular layer of flux containing both glass-forming and glass-modifying ions by firing in a low oxygen-containing atmosphere consisting essentially of an admixture of finely divided particles of oxides of BaTiO 3 , oxides of glass-forming cations, oxides of glass-modifying cations, A site dopant oxide(s), B site dopant oxide(s), oxides of donor ions and oxides of donor compensating ions, characterized stoichiometrically by the following criteria: (a) the molar ratio of A site oxide(s) to B site oxide(s) is 1.02-1.10; (b) the molar ratio of donor oxide(s) to total oxide(s) is 0.5 to 3.0%; (c) the molar ratio of donor-compensating oxide(s) to donor oxide(s) is at least 0.20; (d) the molar ratio of glass-forming oxide(s) to total oxide(s) is 0.5 to 3.5%; and (e) the molar ratio of the glass-modifying oxide(s) to the total oxide(s) is 1.5-5.0%.

Claim 11

The composition of claim 8 in which A site dopant ions, B site dopant ions, oxides of donor ions and oxides of acceptor ions are incorporated within barium titanate during manufacture.

Claim 12

A dielectric composition having a dielectric constant above 5000 consisting essentially of a donor- and acceptor-doped BaTiO 3 which is free of fluorides, reducible oxides and precursors thereof having an intergranular phase of flux containing both glass-forming and glass-modifying ions, characterized stoichiometrically by the following criteria: (a) the ratio of A site ions to B site ions in the doped BaTiO 3 , ##EQU5## wherein N A =number of divalent A site ions; N B =number of tetravalent B site ions; N C =number of acceptor ions; and N D =number of donor ions; (b) The ratio of donor ions (N D ) to total cations (N T ), N D /N T =0.5-3.0%; (c) N C /N D is at least 0.20; (d) The ratio of glass-forming ions (N G ) to total cations (N T ), N G /N T =0.5-3.5%; and (e) the ratio of glass-modifying ions NM to the total number of cations (N T ), N M /N T =1.5-5.0%.

Claim 13

A dielectric composition having a dielectric constant above 5000 consisting essentially of a donor- and acceptor-doped BaTiO 3 which is free of fluorides, reducible oxides and precursors thereof having an intergranular phase of flux containing both glass-forming and glass-modifying ions, characterized stoichiometrically by the following criteria: (a) the ratio of A site ions to B site ions in the doped BaTiO 3 , ##EQU5## wherein N A =number of divalent A site ions; N B =number of tetravalent B site ions; N C =number of acceptor ions; and N D =number of donor ions; (b) The ratio of donor ions (N D ) to total cations (N T ), N D /N T =0.5-3.0%; (c) N C /N D is at least 0.20; (d) The ratio of glass-forming ions (N G ) to total cations (N T ), N G /N T =0.5-3.5%; and (e) the ratio of glass-modifying ions NM to the total number of cations (N T ), N M /N T =1.5-5.0%.