Patent US4854731A successfully refreshed from Google Patents.
US4854731A
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US
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Temperature sensing apparatus
Assignee: Siliconix Ltd
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Filing: 1987-08-03
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Granted: 1989-08-08
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Expires: 2007-08-03
Abstract
Abstract It is desirable to be able to sense the temperature of a semiconductor element to detect, for example, overheating of that element. A temperature sensing apparatus is disclosed which comprises a polysilicon device, functioning as a temperature transducer and integrated with a semiconductor element. A silicon oxide layer separates the temperature transducer device from the element.
Inventors
- 👤 James O. M. Jenkins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:00
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/01; G01K1/00; G01K1/16
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
84 words
Temperature sensing apparatus comprising a substrate, a semiconductor element on the substrate; at least one semiconductor device on the substrate for sensing the temperature of the semiconductor element; and means providing both electrical isolation and thermal contact between the device and the element, the means the device and the element comprising an integrated circuit; and circuit means connected to the device and arranged to provide a signal solely in dependence on the electrical conductivity of the device indicative of the temperature of the element.
Claim 2
Dependent Claim
84 words
Temperature sensing apparatus comprising a substrate, a semiconductor element on the substrate; at least one semiconductor device on the substrate for sensing the temperature of the semiconductor element; and means providing both electrical isolation and thermal contact between the device and the element, the means the device and the element comprising an integrated circuit; and circuit means connected to the device and arranged to provide a signal solely in dependence on the electrical conductivity of the device indicative of the temperature of the element.
Claim 3
Dependent Claim
22 words
Temperature sensing apparatus as claimed in claim 1, wherein the means providing both electrical isolation and thermal contact comprises a dielectric layer.
Claim 4
Dependent Claim
18 words
Temperature sensing apparatus as claimed in claim 2, wherein the dieletric layer comprises silicon nitride and/or silicon dioxide.
Claim 5
Dependent Claim
16 words
Temperature sensing apparatus as claimed in claim 1, wherein the semiconductor device is integrated in polysilicon.
Claim 6
Dependent Claim
17 words
Temperature sensing apparatus as claimed in claim 1, wherein the semiconductor device is an unipolar junction device.
Claim 7
Dependent Claim
24 words
Temperature sensing apparatus as claimed in claim 5, wherein the unipolar junction device consists of either a diode, a MOS switch or a resistor.
Claim 8
Dependent Claim
18 words
Temperature sensing apparatus as claimed in claim 1, wherein the semiconductor element consists essentially of a MOS switch.
Claim 9
Dependent Claim
33 words
Temperature sensing apparatus as claimed in claim 7, wherein the circuit further includes gate biasing means for the switch operable to turn off the MOS switch at a predetermined temperature of the switch.
Claim 10
Dependent Claim
21 words
Temperature sensing apparatus as claimed in claim 1, wherein the output circuit comprises a voltage source for applying a predetermined voltage.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-07 | 1993-02-06 | 1993-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-07 | 1997-02-06 | 1997-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-07 | 2001-02-06 | 2001-08-08 | $7700.00 | Window Closed / Lapsed |