US4853196A
Expired / Lapsed
US
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Water-soluble boron containing impurity reduced hexagonally crystalline boron nitride and process for production thereof
Assignee: JFE Steel Corp
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Filing: 1987-04-30
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Granted: 1989-08-01
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Expires: 2007-04-30
Abstract
Abstract A hexagonally crystalline boron nitride containing water-soluble boron containing impurities in such a magnitude that the amount of boron contained in an extract after boiling at 100° C. in pure water is less than or equal to 100 μg per gram of boron nitride. In order to purify the boron nitride, a purification process is carried out according to the steps of preparing fine particles of boron nitride powder; dispersing the boron nitride powder in a dispersion medium and stirred for a given period of time for removing water-soluble boron containing impurities; and drying the boron nitride in atmosphere, in which the vapor pressure is maintained lower than or equal to 10 mmHG and/or the process temperature is maintained lower than or equal to 100° C.
Inventors
- 👤 Takahisa Koshida
- 👤 Ryoji Uchimura
- 👤 Takeshi Ogasawara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 08:37
CPC Classifications
C; C01; C01B; C01B21/00; C01B21/06; C01B21/064; C01B21/0648; C01P; C01P2002/00; C01P2002/70; C01P2002/77; C01P2004/00; C01P2004/60; C01P2004/61; C01P2004/62; C01P2006/00; C01P2006/10
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
82 words
A method for purifying a hexagonally crystalline boron nitride, comprising the steps of: preparing particles of boron nitride powder dispersing said boron nitride powder in a dispersion medium and stirring for a given period of time for removing a water-soluble boron containing impurity and drying the boron nitride in an atmosphere in which the vapor pressure of water is maintained lower than or equal to 10 mmHG and/or at a process temperature which is maintained lower than or equal to 100° C.
Claim 2
Independent Claim
82 words
A method for purifying a hexagonally crystalline boron nitride, comprising the steps of: preparing particles of boron nitride powder dispersing said boron nitride powder in a dispersion medium and stirring for a given period of time for removing a water-soluble boron containing impurity and drying the boron nitride in an atmosphere in which the vapor pressure of water is maintained lower than or equal to 10 mmHG and/or at a process temperature which is maintained lower than or equal to 100° C.
Claim 3
Dependent Claim
66 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 1, wherein the purified boron nitride contains a reduced amount of a water-soluble boron containing impurity in such a magnitude that the amount of boron containing impurity contained in an extract after boiling at 100° C. in pure water is less than or equal to 100 g per gram of boron nitride.
Claim 4
Dependent Claim
37 words
A metod for purifying the hexagonally crystalline boron nitride as set forth in claim 2, wherein said dispersion medium is a solution of a surface active agent, a solution of an organic solvent or a mixture thereof.
Claim 5
Dependent Claim
34 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 3, wherein said organic solvent is selected from the group consisting of acetone, acetylacetone, ethyl amine, acetaldehyde and other alcohols.
Claim 6
Dependent Claim
43 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 3, wherein said surface active agent is selected from the group consisting of anionic system surface active agents, nonionic system surface active agents, and cationic system surface active agents.
Claim 7
Dependent Claim
51 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 5, wherein said surface active agent is selected, from the group consisting of polyoxyethylene(5)sorbitan monostearate, polyoxyethylene(4)sorbitan trioleate, polyoxyethylene glycol 400 monooleate, triethanolamine oleate, polyethylene glycol 400 monooleate, triethanolamine oleate, polyoxyethylene(9)nonylphenol, polyethylene glycol 400 monolaurate, and polyoxyethylene(4)sorbitan monolaurate.
Claim 8
Dependent Claim
35 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 5, wherein the concentration of the surface active agent is in a range of 0.001 Wt % to 1 Wt %.
Claim 9
Dependent Claim
36 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 2, wherein said dispersion medium is an organic solvent selected from the group consisting of acetone, acetylacetone, ethyl amine, acetaldehyde, and alcohols.
Claim 10
Dependent Claim
54 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 2, wherein said dispersion medium is a surface active agent selected from the group consisting of polyoxyethylene(5)sorbitan monostearate, polyoxyethylene(4)sorbitan trioleate, polyoxyethylene glycol 400 monooleate, triethanolamine oleate, polyethylene glycol 400 monooleate, triethanolamine oleate, polyoxyethylene(9)nonylphenol, polyethylene glycol 400 monolaurate, and polyoxyethylene(4)sorbitan monolaurate.
Claim 11
Dependent Claim
41 words
A method for purifying the boron nitride as set forth in claim 8, which further comprises the step of heat treating the boron nitride, after said drying, for removing a water-soluble boron containing impurity from the surface of boron nitride crystallite.
Claim 12
Dependent Claim
31 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 10, wherein said heat treatment is performed at a temperature higher than or equal to 1600° C.
Claim 13
Dependent Claim
37 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 11, in wherein said hexagonally crystalline boron nitride obtained by said heat treatment contains less than or equal to 1000 ppm of oxygen.
Claim 14
Dependent Claim
36 words
A method for purifying the hexagonally crystalline boron nitride as set forth claim 11 in wherein said hexagonally crystalline boron nitride obtained by said heat treatment contains less than or equal to 1000 ppm of carbon.
Claim 15
Dependent Claim
27 words
A method for purifying the hexagonally crystalline boron nitride as set forth claim 11 in wherein said hexagonally crystalline boron nitride is in a form of powder.
Claim 16
Dependent Claim
32 words
A method for purifying the hexagonally crystalline boron nitride as set forth in claim 11, wherein said hexagonally crystalline boron nitride has an average particle size of about 0.5 to 20 μm.
Claim 17
Dependent Claim
11 words
The method defined in claim 4 wherein said alcohol is phenol.
Claim 18
Dependent Claim
11 words
The method defined in claim 8 wherein said alcohol is phenol.
References Cited (Backward Citations)
US3120998A
Cited
US3415625A
Cited
US3473894A
Cited
US3660027A
Cited
US3734997A
Cited
US4107276A
Cited
US4089931A
Cited
US4409193A
Cited
US4634640A
Cited
US4565747A
Cited
US4784978A
Cited
JPH02176904A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-31 | 1993-01-30 | 1993-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-31 | 1997-01-30 | 1997-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-31 | 2001-01-30 | 2001-08-01 | $7700.00 | Window Closed / Lapsed |