Standard cell array having fake gate for isolating devices from supply voltages

Claim 2

A gate array utilizing trench isolation techniques comprising a plurality of standard cells monolithically integrated on a first layer of said gate array and a plurality of input/output pads disposed on the periphery of said gate array, said standard cells arranged in rows and columns, each said standard cell including an active region having a first conductivity type formed within a well having a second conductivity type defining a plurality of transistors interconnected in a predetermined arrangement wherein said active region forms the source or drain of at least one of said plurality of transistors and first means disposed within said standard cell for tying down said well and adjacent to said active region for applying a first voltage to said well wherein local and global routing channels are left open and isolating said first voltage from said active region when said active region is sallicided, and second means coupled between selected ones of said plurality of transistors and other selected ones of said plurality of transistors and selected ones of said input/output pads for transmitting signals and said first voltage and a second voltage therebetween and coupled to said first means for supplying said first voltage thereto.

Claim 3

The gate array according to claim 1 wherein said first means comprises: a fake gate disposed adjacent and separate from one of a source or drain of one of said transistors.

Claim 4

The gate array according to claim 2 wherein said second means comprises: third means partially overlapping said plurality of transistors and extending between adjacent rows of said cells and selectively coupled to said plurality of transistors for supplying said first and second voltages thereto; and fourth means overlying said third means and partially overlapping said first means and extending between adjacent columns of said cells and coupled to said third means for supplying said first and second voltage thereto.

Claim 5

The gate array according to claim 3 further comprising fifth means underlying said fourth means and overlying one of said rows of cells and selectively interconnected between said plurality of transistors and said input/output pads for supplying signals therebetween.

Claim 6

The gate array according to claim 4 further comprising sixth means overlying both said third means and one of said columns of cells and selectively interconnected between said plurality of transistors, said third means and said input/output pads for supplying said signals therebetween.

Claim 7

The gate array according to claim 5 wherein each of said third, fourth, fifth and sixth means comprise a plurality of conductive strips.

Claim 8

The gate array according to claim 6 wherein said conductive strips of said fifth means extend substantially the entire length of said respective row.

Claim 9

The gate array according to claim 3 wherein said third means comprises a first plurality of conductive strips for supplying a first voltage and a second plurality of conductive strips for supplying a second voltage, wherein said conductive strips of each said first and second plurality of conductive strips alternatively overlap and extend between adjacent rows of said cells.

Claim 10

The gate array according to claim 8 wherein said fourth means comprises a third plurality of conductive strips for supplying said first voltage and a fourth plurality of conductive strips for supplying said second voltage, wherein said conductive strips of each said third and fourth plurality of conductive strips alternatively overlap and extend between adjacent columns of said cells.

Claim 11

A semiconductor integrated circuit comprising: a substrate; a plurality of input/output pads disposed on said substrate; a plurality of standard cells disposed on said substrate, said plurality of standard cells arranged in a plurality of rows and a plurality of columns, adjacent standard cells being mirrored relative to each other, each standard cell comprising: a plurality of MOS transistors having a first conductivity type, each transistor having a gate, a drain and a source; an active region having a second conductivity type overlying said substrate for tying down said substrate and separated from said plurality of MOS transistors; and a fake gate connected to said active region by a buried region and separated from and disposed adjacent to one of said drains and sources of said plurality of MOS transistors wherein local and global routing channels are left open; a first layer of metal comprising: a first plurality of metal strips overlying one of said row of cells, said first plurality of metal strips selectively interconnected between said plurality of transistors and and said input/output pads; and a second plurality of metal strips partially overlapping said plurality of MOS transistors and extending between said rows of standard cells and selectively coupled to said plurality of transistors and coupled to said active region for supplying a supply voltage thereto; and a second layer of metal overlying said first layer of metal comprising: a third plurality of metal strips overlying one of said columns of said cells, said third plurality of metal strips selectively interconnected between said plurality of transistors and said first plurality of metal strips; and a fourth plurality of metal strips partially overlapping said active regions and extending between said columns of standard cells and selectively coupled to said second plurality of metal strips for supplying said supply voltage thereto.

Claim 12

A semiconductor integrated circuit comprising: a substrate; a plurality of input/output pads disposed on said substrate; a plurality of standard cells disposed on said substrate, said plurality of standard cells arranged in a plurality of rows and a plurality of columns, adjacent standard cells being mirrored relative to each other, each standard cell comprising: a plurality of MOS transistors having a first conductivity type, each transistor having a gate, a drain and a source; an active region having a second conductivity type overlying said substrate for tying down said substrate and separated from said plurality of MOS transistors; and a fake gate connected to said active region by a buried region and separated from and disposed adjacent to one of said drains and sources of said plurality of MOS transistors wherein local and global routing channels are left open; a first layer of metal comprising: a first plurality of metal strips overlying one of said row of cells, said first plurality of metal strips selectively interconnected between said plurality of transistors and and said input/output pads; and a second plurality of metal strips partially overlapping said plurality of MOS transistors and extending between said rows of standard cells and selectively coupled to said plurality of transistors and coupled to said active region for supplying a supply voltage thereto; and a second layer of metal overlying said first layer of metal comprising: a third plurality of metal strips overlying one of said columns of said cells, said third plurality of metal strips selectively interconnected between said plurality of transistors and said first plurality of metal strips; and a fourth plurality of metal strips partially overlapping said active regions and extending between said columns of standard cells and selectively coupled to said second plurality of metal strips for supplying said supply voltage thereto.

Claim 13

The semiconductor integrated circuit according to claim 11 further comprising a third layer of metal overlying said second layer of metal comprising a fifth plurality of metal strips overlying one of said rows of said cells, said third plurality of metal strips selectively interconnected between said plurality of transistors and said first and third plurality of metal strips.

Claim 14

The semiconductor integrated circuit according to claim 10 wherein said first plurality of metal strips extend substantially the length of said row of cells.

Claim 15

The semiconductor integrated circuit according to claim 10 wherein said third plurality of metal strips extend substantially the length of said column of cells.