US4851360A
Expired / Lapsed
US
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NMOS source/drain doping with both P and As
Assignee: Texas Instruments Inc
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Filing: 1988-03-09
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Granted: 1989-07-25
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Expires: 2008-03-09
Abstract
Abstract A process for forming N-channel MOS sources and drains, by implanting both phosphorus and arsenic. The high diffusivity of phosphorus causes it to diffuse in advance of the bulk of the arsenic, so that, after annealling, the source/drain regions have graded regions of gradually decreasing conductivity adjacent to the end of the channels. Thus the electric potential gradient at the ends of the channels is reduced, and impact ionization and hot carrier effects are avoided. The effective radius of the source (or drain) junction is increased, providing increased breakdown voltage.
Inventors
- 👤 Roger A. Haken
- 👤 David B. Scott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; Y; Y10; Y10S; Y10S257/00; Y10S257/917
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
95 words
A method for forming MIS source/drain regions, comprising the steps of: providing a semiconductor substrate; masking said substrate except where said source/drain regions are to be implanted; implanting dopant atoms of first and second species to approximately the same depth profile in said respective source/drain regions, both said dopant species having the same conductivity type in said substrate, and said first species having a higher diffusivity than said second species; and annealing said implanted dopants so said implanted first species diffuses beyond said implanted second species during said annealing step to form a peripheral band.
Claim 2
Independent Claim
95 words
A method for forming MIS source/drain regions, comprising the steps of: providing a semiconductor substrate; masking said substrate except where said source/drain regions are to be implanted; implanting dopant atoms of first and second species to approximately the same depth profile in said respective source/drain regions, both said dopant species having the same conductivity type in said substrate, and said first species having a higher diffusivity than said second species; and annealing said implanted dopants so said implanted first species diffuses beyond said implanted second species during said annealing step to form a peripheral band.
Claim 3
Dependent Claim
29 words
The method of claim 1, wherein the range to which said first dopant is implanted is at least equal to the range to which said second dopant is implanted.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein said first species is implanted in a dose which is not greater than the dose of said second species.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein said first species is phosphorus, said second species is arsenic, and said substrate is silicon.
Claim 6
Dependent Claim
21 words
The method of claim 2, wherein said first species is phosphorus, said second species is arsenic, and said substrate is silicon.
Claim 7
Dependent Claim
21 words
The method of claim 3, wherein said first species is phosphorus, said second species is arsenic, and said substrate is silicon.
Claim 8
Dependent Claim
29 words
The method of claim 4, wherein said first species is implanted in a dose which is less than two-thirds of the dose in which said second species is implanted.
Claim 9
Dependent Claim
21 words
The method of claim 7, wherein said first species is phosphorus, said second species is arsenic, and said substrate is silicon.
References Cited (Backward Citations)
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