US4851256A
Expired / Lapsed
US
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Apparatus and method for manufacturing photosensitive amorphous silicon objects
Assignee: Sharp Corp
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Filing: 1987-12-09
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Granted: 1989-07-25
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Expires: 2007-12-09
Abstract
Abstract An apparatus for manufacturing photosensitive amorphous silicon objects comprises a pair of coaxial cylindrical electrodes inside a reaction tank of a plasma CVD device. A plurality of cylindrical substrates of an electrically conductive material disposed between these electrodes. A source gas is injected into the reaction tank through a plurality of inlets evenly spaced on the outer peripheral wall so that films of uniform quality can be produced efficiently.
Inventors
- 👤 Toshiro Matsuyama
- 👤 Yoshimi Kojima
- 👤 Shaw Ehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:13
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5093; C23C16/54; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
93 words
A plasma chemical vapor deposition apparatus for manufacturing photosensitive amorphous silicon objects comprising a reaction tank structure with a cylindrical inner surface with a plurality of inlets for introducing a source gas therethrough into said reaction tank structure, cylindrical outer and inner electrodes disposed inside said reaction tank structure in coaxial relationship with respect to each other and to said cylindrical inner surface of said reaction tank structure, said inner electrode being porous and adapted to pass said source gas therethrough, and cylindrical substrates of an electrically conductive material disposed between said electrodes.
Claim 2
Dependent Claim
93 words
A plasma chemical vapor deposition apparatus for manufacturing photosensitive amorphous silicon objects comprising a reaction tank structure with a cylindrical inner surface with a plurality of inlets for introducing a source gas therethrough into said reaction tank structure, cylindrical outer and inner electrodes disposed inside said reaction tank structure in coaxial relationship with respect to each other and to said cylindrical inner surface of said reaction tank structure, said inner electrode being porous and adapted to pass said source gas therethrough, and cylindrical substrates of an electrically conductive material disposed between said electrodes.
Claim 3
Dependent Claim
21 words
The apparatus of claim 1 wherein said plurality of inlets are distributed nearly evenly around the periphery of said outer wall.
Claim 4
Dependent Claim
25 words
The apparatus of claim 1 further comprising a rotary mechanism for causing said substrates to rotate both around themselves and around said inner cylindrical electrode.
Claim 5
Dependent Claim
20 words
The apparatus of claim 1 further comprising an outlet at a position on the central axis of said cylindrical electrodes.
Claim 6
Dependent Claim
20 words
The apparatus of claim 2 further comprising an outlet at a position on the central axis of said cylindrical electrodes.
Claim 7
Dependent Claim
12 words
The apparatus of claim 1 further comprising a high frequency power source.
Claim 8
Dependent Claim
26 words
The apparatus of claim 1 further comprising a gas outlet so disposed that said source gas passes through said cylindrical inner electrode to reach said outlet.
Claim 9
Independent Claim
81 words
A method for manufacturing photosensitive amorphous silicon objects comprising the steps of arranging a plurality of cylindrical electrically conductive substrates coaxially in an evenly spaced circular formation, causing said substrates to rotate both around themselves and around a cylindrical and porous inner electrode inside a cylindrical outer wall coaxial with said inner electrode, and introducing a source gas for plasma CVD through a plurality of inlets provided on said outer wall, said inlets being evenly spaced around said cylindrical outer wall.
Claim 10
Independent Claim
81 words
A method for manufacturing photosensitive amorphous silicon objects comprising the steps of arranging a plurality of cylindrical electrically conductive substrates coaxially in an evenly spaced circular formation, causing said substrates to rotate both around themselves and around a cylindrical and porous inner electrode inside a cylindrical outer wall coaxial with said inner electrode, and introducing a source gas for plasma CVD through a plurality of inlets provided on said outer wall, said inlets being evenly spaced around said cylindrical outer wall.
Claim 11
Dependent Claim
21 words
The method of claim 8 further comprising the step of causing said source gas to pass through said porous inner electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |