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US4847669A Expired / Lapsed US ⏱️ 0.0 years remaining

Tandem photoelectric conversion device

Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-12-17
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Granted: 1989-07-11
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Expires: 2006-12-17
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Abstract

Abstract An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.

Inventors

  • 👤 Shunpei Yamazaki
  • 👤 Masayoshi Abe
  • 👤 Susumu Nagayama
  • 👤 Kunio Suzuki
  • 👤 Takeshi Fukada
  • 👤 Mikio Kinka
  • 👤 Katsuhiko Shibata
  • 👤 Masato Susukida

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 22:49
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F19/00; H10F19/30; H10F19/31; H10F19/40; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 104 words
A photoelectric conversion device comprising: a pair of substrates, at least one of which is transparent; a structure for supporting said pair of substrates in parallel; a first photoelectric conversion semiconductor device formed on one of the opposed inner surfaces of said pair of substrates; a second photoelectric conversion semiconductor device formed on the other of the opposed inner surfaces of said pair of substrates such that there is a gap between the first and second photoelectric conversion semiconductor devices; and an insulating material filling the gap between said first and second photoelectric conversion semiconductor devices for preventing said semiconductor devices from contacting air.
Claim 2
Dependent Claim 104 words
A photoelectric conversion device comprising: a pair of substrates, at least one of which is transparent; a structure for supporting said pair of substrates in parallel; a first photoelectric conversion semiconductor device formed on one of the opposed inner surfaces of said pair of substrates; a second photoelectric conversion semiconductor device formed on the other of the opposed inner surfaces of said pair of substrates such that there is a gap between the first and second photoelectric conversion semiconductor devices; and an insulating material filling the gap between said first and second photoelectric conversion semiconductor devices for preventing said semiconductor devices from contacting air.
Claim 3
Dependent Claim 21 words
The device of claim 1 wherein said first and second photoelectric conversion semiconductor devices are layered semiconductors incorporating pin junction therein.
Claim 4
Dependent Claim 62 words
The device of claim 2 wherein the substrate carrying said first photoelectric conversion semiconductor device is transparent so that said first semiconductor device receives incident light to be converted prior to the reception of said light by said second semiconductor device, the energy gap of the intrinsic semiconductor of said first semiconductor device being wider than that of said second semiconductor device.
Claim 5
Dependent Claim 24 words
The device of claim 3 wherein said second semiconductor device is thicker in the direction of the incident light than said first semiconductor device.
Claim 6
Dependent Claim 60 words
The device of claim 3 wherein each of said first and second semiconductor devices is formed of series-connected photoelectric conversion elements respectively and the area of each element of the first semiconductor device is larger than that of each element of the second semiconductor device where each area of an element is transverse to the direction of the incident light.
Claim 7
Dependent Claim 32 words
The device of claim 1 wherein the crystallinities of said first and second semiconductor devices are different so that the energy output of said first and second semiconductor devices is also different.

References Cited (Backward Citations)

JPS60240167A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-07-10 1993-01-09 1993-07-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-07-10 1997-01-09 1997-07-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-07-10 2001-01-09 2001-07-11 $7700.00 Window Closed / Lapsed

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