US4846949A
Expired / Lapsed
US
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High resistivity chromium silicide films
Assignee: Southwall Technologies Inc
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Filing: 1987-10-30
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Granted: 1989-07-11
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Expires: 2007-10-30
Abstract
Abstract High resistivity chromium silicide coatings that are chemically, physically, and electrically stable at high temperatures are provided. The coatings are applied to substrates, optionally over a barrier layer of dielectric. The coatings are deposited in a magnetron sputtering process involving sputtering of a CrSi 2 target in the presence of a gaseous mixture that includes nitrogen. The coatings so provided typically have resistivities on the order of 100 to 20,000 ohms per square. The degree of nitrogen incorporation varies with the thickness of the chromium silicide to give selected ranges of stable products.
Inventors
- 👤 Yue-Tung Tu
- 👤 Martin P. Rosenblum
- 👤 Elliot V. English
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:22
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/02; C23C14/024; C23C14/06; C23C14/0682
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
85 words
A process for preparing a thermally stable high resistivity chromium silicide film, comprising the step of: depositing on a heat-stable flexible substrate by magnetron sputtering, in the presence of a gaseous mixture consisting essentially of 50-80 volume % of an inert gas selected from argon, xenon, neon, krypton, and mixtures thereof and, correspondingly, 50-20 volume % of nitrogen, a 300 to 6000 angstrom layer comprising chromium silicide, said volume % of nitrogen being selected to give a thermally stable film at the layer thickness selected.
Claim 2
Dependent Claim
85 words
A process for preparing a thermally stable high resistivity chromium silicide film, comprising the step of: depositing on a heat-stable flexible substrate by magnetron sputtering, in the presence of a gaseous mixture consisting essentially of 50-80 volume % of an inert gas selected from argon, xenon, neon, krypton, and mixtures thereof and, correspondingly, 50-20 volume % of nitrogen, a 300 to 6000 angstrom layer comprising chromium silicide, said volume % of nitrogen being selected to give a thermally stable film at the layer thickness selected.
Claim 3
Dependent Claim
14 words
The process of claim 1, wherein said heat-stable flexible substrate is a plastic support.
Claim 4
Dependent Claim
12 words
The process of claim 2, wherein said plastic support is a polyimide.
Claim 5
Dependent Claim
29 words
The process of claim 1, wherein said heatstable substrate is coated, prior to deposition of the chromium silicide layer, with an underlayer comprising a chemically compatible, heat-stable barrier material.
Claim 6
Dependent Claim
11 words
The process of claim 4, wherein said barrier material is silicon.
Claim 7
Dependent Claim
12 words
The process of claim 4, wherein said barrier material is indium-tin oxide.
Claim 8
Dependent Claim
17 words
The process of claim 4, wherein said underlayer has a thickness of at least about 100 angstroms.
Claim 9
Dependent Claim
11 words
The process of claim 1 wherein said inert gas is argon.
Claim 10
Dependent Claim
98 words
A process for preparing a thermally stable high resistivity chromium silicide film, comprising the steps of: depositing a first layer of dielectric on a heat-stable flexible substrate by sputtering of a dielectric target and depositing by magnetron sputtering on said first layer, in the presence of a gaseous mixture consisting essentially of 50-80 volume % of an inert gas selected from argon, xenon, neon, krypton, and mixtures thereof and, correspondingly, 50-20 volume % of nitrogen, a second layer comprising chromium silicide, said volume % of nitrogen being selected to give a thermally stable film at the thickness selected.
Claim 11
Dependent Claim
98 words
A process for preparing a thermally stable high resistivity chromium silicide film, comprising the steps of: depositing a first layer of dielectric on a heat-stable flexible substrate by sputtering of a dielectric target and depositing by magnetron sputtering on said first layer, in the presence of a gaseous mixture consisting essentially of 50-80 volume % of an inert gas selected from argon, xenon, neon, krypton, and mixtures thereof and, correspondingly, 50-20 volume % of nitrogen, a second layer comprising chromium silicide, said volume % of nitrogen being selected to give a thermally stable film at the thickness selected.
Claim 12
Dependent Claim
14 words
The process of claim 9, wherein said heatstable flexible substrate is a plastic support.
Claim 13
Dependent Claim
12 words
The process of claim 10, wherein said plastic support is a polyimide.
Claim 14
Dependent Claim
22 words
The process of claim 9, wherein said first layer is deposited in the presence of a controlled amount of an inert gas.
Claim 15
Dependent Claim
21 words
The process of claim 12, wherein said inert gas present during the deposit of the first and second layers is argon.
Claim 16
Dependent Claim
22 words
The process of claim 9, wherein said heat-stable substrate is subjected to a preglow discharge prior to deposition of said first layer.
Claim 17
Dependent Claim
24 words
The process of claim 9, wherein the target sputtered to create the second layer comprises chromium silicide in at least about 99.5 wt.% purity.
Claim 18
Dependent Claim
24 words
The process of claim 4, further including depositing an overlayer on the chromium silicide layer, said overlayer comprising a chemically compatible, heat-stable barrier material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-10 | 1993-01-09 | 1993-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-10 | 1997-01-09 | 1997-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-10 | 2001-01-09 | 2001-07-11 | $7700.00 | Window Closed / Lapsed |