US4845045A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating electrically-programmable element in a semiconductor integrated circuit using a doped plug to extend the depth of a doped region
Assignee: Zoran Corp
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Filing: 1988-09-15
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Granted: 1989-07-04
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Expires: 2008-09-15
Abstract
Abstract An electrically programmable element is fabricated in a P-N junction isolated region of a semiconductor body by first extending the depth of the region in the body by introducing dopants through the region into the body by ion implantation or by diffusion and drive-in, and thereafter forming an amorphotized layer in the first region overlying the extended portion. The increased depth of the first region provided by the second region prevents damage to the P-N junction between the semiconductor body and the first region during formation of the amorphotized layer.
Inventors
- 👤 Yosef Y. Shacham
- 👤 Alexander B. Sinar
- 👤 Eric R. Sirkin
- 👤 Ilan A. Blech
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:57
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; H10W20/00; H10W20/01; H10W20/031; H10W20/064
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
72 words
A method of fabricating an electrically programmable element in a region of one conductivity type formed in a semiconductor body of opposite conductivity type comprising the steps of: introducing dopants of said one conductivity type into said semiconductor body through said region and thereby extending the depth of at least a portion of said region into said body, and forming an amorphotized layer in said region above said portion of said region.
Claim 2
Independent Claim
72 words
A method of fabricating an electrically programmable element in a region of one conductivity type formed in a semiconductor body of opposite conductivity type comprising the steps of: introducing dopants of said one conductivity type into said semiconductor body through said region and thereby extending the depth of at least a portion of said region into said body, and forming an amorphotized layer in said region above said portion of said region.
Claim 3
Dependent Claim
35 words
The method of fabricating an electrically programmable element as defined by claim 1 wherein said step for forming an amorphotized layer includes implanting dopants of said one conductivity type in said layer of said region.
Claim 4
Dependent Claim
40 words
The method of fabricating an electrically programmable element as defined by claim 2 wherein said step of introducing dopants includes implanting ions of said one conductivity type through said region into said semiconductor body and then annealing said semiconductor body.
Claim 5
Dependent Claim
42 words
The method of fabricating an electrically programmable element as defined by claim 2 wherein said step of introducing dopants includes applying a dopant of said one conductivity type to said region and then driving said dopant through said region into said body.
Claim 6
Dependent Claim
41 words
The method of fabricating an electrically programmable element as defined by claim 4 wherein said step of introducing dopants further includes implanting ions of said one conductivity type through said region into said semiconductor body and then annealing said semiconductor body.
References Cited (Backward Citations)
US4590589A
Cited
US4569120A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-03 | 1993-01-02 | 1993-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-03 | 1997-01-02 | 1997-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-03 | 2001-01-02 | 2001-07-04 | $7700.00 | Window Closed / Lapsed |