US4841351A
Expired / Lapsed
US
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HGCDTE Photodiode with high speed response
Assignee: Societe Anonyme de Telecommunications SAT
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Filing: 1988-04-13
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Granted: 1989-06-20
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Expires: 2008-04-13
Abstract
Abstract The invention relates to a photodiode with high speed response formed in a P type HgCdTe semiconductor substrate. On one face of this invention an N type doped zone is formed. A metallization is in contact with a layer of copper telluride Cu 2 Te, disposed on the other face of the HgCdTe semiconductor substrate, opposite the PN junction. Such a photodiode, sensitive to the near infrared, has a low series resistance which confers thereon a high speed response.
Inventors
- 👤 Royer Michel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:56
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10F77/241
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
71 words
A phototdiode made from a P type HgCdTe semiconductor substrate in which an N type doped zone is formed on one face thus providing a PN junction, and with metallizations for access to the P and N zones, wherein the metallization giving access to the P zone is in contact with a degenerated Cu 2 Te layer disposed on the P face of said HgCdTe semiconductor substrate opposite the PN junction.
Claim 2
Dependent Claim
71 words
A phototdiode made from a P type HgCdTe semiconductor substrate in which an N type doped zone is formed on one face thus providing a PN junction, and with metallizations for access to the P and N zones, wherein the metallization giving access to the P zone is in contact with a degenerated Cu 2 Te layer disposed on the P face of said HgCdTe semiconductor substrate opposite the PN junction.
Claim 3
Dependent Claim
18 words
The photodiode as claimed in claim 1, wherein said degenerated layer has a thickness of substantially 0.1 micron.
Claim 4
Dependent Claim
23 words
The photodiode as claimed in claim 1, in which said degenerated layer is obtained by immersing said substrate in an aqueous CuCl solution.
Claim 5
Dependent Claim
39 words
The photodiode as claimed in claim 3, wherein, with said aqueous CuCl solution having a concentration of substantially 4 g/l and being heated to substantially 80° C., said substrate is immersed for substantially 15 minutes in said aqueous solution.
Claim 6
Dependent Claim
26 words
The photodiode as claimed in claim 3, wherein said aqueous CuCl solution further contains sodium tartrate so that its pH remains between substantially 4 and substantially
Claim 7
Dependent Claim
30 words
The photodiode as claimed in claim 3, wherein said aqueous CuCl solution further contains a substance chosen from the following: chloride, bromide or iodide of an alkaline or alkaline-earth metal.
Claim 8
Dependent Claim
17 words
The photodiode as claimed in claim 3, wherein said aqueous CuCl solution further contains a reducing agent.
Claim 9
Dependent Claim
14 words
The photodiode as claimed in claim 7, wherein said reducing agent is hydrazine dichlorate.
Claim 10
Dependent Claim
36 words
The photodiode as claimed in claim 1, wherein, with the composition of said HgCdTe semiconductor substrate defined by the formula HG 1-x Cd x Te, the molar fraction x is between substantially 0.2 and substantially 0.7.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-19 | 1992-12-19 | 1993-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-19 | 1996-12-19 | 1997-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-19 | 2000-12-19 | 2001-06-20 | $7700.00 | Window Closed / Lapsed |