US4840122A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated silicon plasma switch
Assignee: Honeywell Inc
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Filing: 1988-04-18
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Granted: 1989-06-20
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Expires: 2008-04-18
Abstract
Abstract A switch device for one-time use in conducting very high currents comprising a silicon substrate on which is deposited a amorphous silicon or polysilicon strip extending as a bridge between first and second spaced-apart metal contacts deposited on the silicon substrate. Also deposited on the same substrate on opposite sides of the bridge and spaced from it are a set of high voltage contacts. When a high voltage is applied across the contacts, no current flows until a trigger current is made to flow through the bridge, the trigger current being sufficiently large to vaporize the bridge creating a plasma cloud. The plasma, being highly conductive, allows a very large current to flow between the high voltage contacts. The device of the present invention finds special application as part of a detonation system for high explosive ammunitions. This specification discloses various modifications to the above structure to achieve desired performance characteristics.
Inventors
- 👤 Eldon Nerheim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:51
CPC Classifications
F; F42; F42B; F42B3/00; F42B3/10; F42B3/12; F42B3/13; H; H01; H01T; H01T2/00; H01T2/02
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
85 words
An integrated circuit device for switching high currents, comprising: (a) a silicon chip substrate having first and second pairs of conductive contacts deposited on at least one surface of said substrate, said contacts being spaced apart along two mutually perpendicular axes; (b) a strip of material which, when vaporized, creates a plasma cloud, disposed on said silicon chip substrate joining said first pair of contacts to one another, said strip of material extending between but out of physical contact with said second pair of contacts.
Claim 2
Dependent Claim
85 words
An integrated circuit device for switching high currents, comprising: (a) a silicon chip substrate having first and second pairs of conductive contacts deposited on at least one surface of said substrate, said contacts being spaced apart along two mutually perpendicular axes; (b) a strip of material which, when vaporized, creates a plasma cloud, disposed on said silicon chip substrate joining said first pair of contacts to one another, said strip of material extending between but out of physical contact with said second pair of contacts.
Claim 3
Dependent Claim
16 words
The integrated circuit device as in claim 1 wherein said material is amorphous silicon or polysilicon.
Claim 4
Dependent Claim
26 words
The integrated circuit device as in claim 1 wherein said first and second pairs of contacts are on the same surface of said silicon chip substrate.
Claim 5
Dependent Claim
24 words
The integrated circuit as in claim 1 wherein said first and second pairs of contacts are on opposed surfaces of said silicon chip substrate.
Claim 6
Dependent Claim
19 words
The integrated circuit as in claim 1 wherein said strip of material is defused into said silicon chip substrate.
Claim 7
Dependent Claim
26 words
The integrated circuit as in claim 1 wherein application of a predetermined potential across said first pair of terminals causes said strip of material to vaporize.
Claim 8
Dependent Claim
23 words
The integrated circuit as in claim 6 and further including means surrounding a portion of said silicon chip substrate for containing said plasma.
Claim 9
Dependent Claim
28 words
The integrated circuit as in claim 1 wherein said silicon chip substrate is of reduced thickness in a zone proximate the under surface of said strip of material.
Claim 10
Dependent Claim
36 words
The integrated circuit as in claim 1 wherein said silicon chip substrate is encased in a molded plastic housing and lead means are provided for connecting external circuitry to said first and second pairs of contacts.
Claim 11
Dependent Claim
20 words
The integrated circuit as in claim 1 wherein said second pair of contacts are connectable to a high voltage source.
Claim 12
Dependent Claim
27 words
The integrated circuit as in claim 1 wherein said silicon chip substrate also includes integrated slapper detonator means connected to one of said second pair of contacts.
Claim 13
Dependent Claim
136 words
A detonator device for use with high explosives comprising: (a) a flexible printed circuit substrate having a pattern of metallization thereon defining first and second high voltage terminals, a relatively narrow bridge segment and relatively wide strip joining each end of said bridge segment to said high voltage terminals, said flexible printed circuit substrate having a closed perforated line defining an area directly beneath said bridge segment; (b) an integrated plasma switch having first and second trigger terminals, a pair of high voltage contacts and a silicon bridge member joining said first and second trigger terminals; and (c) means for mounting said integrated plasma switch on said flexible substrate with said pair of high voltage contacts of said plasma switch connected in series circuit with said first and second high voltage terminals on said flexible substrate.
Claim 14
Dependent Claim
136 words
A detonator device for use with high explosives comprising: (a) a flexible printed circuit substrate having a pattern of metallization thereon defining first and second high voltage terminals, a relatively narrow bridge segment and relatively wide strip joining each end of said bridge segment to said high voltage terminals, said flexible printed circuit substrate having a closed perforated line defining an area directly beneath said bridge segment; (b) an integrated plasma switch having first and second trigger terminals, a pair of high voltage contacts and a silicon bridge member joining said first and second trigger terminals; and (c) means for mounting said integrated plasma switch on said flexible substrate with said pair of high voltage contacts of said plasma switch connected in series circuit with said first and second high voltage terminals on said flexible substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-19 | 1992-12-19 | 1993-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-19 | 1996-12-19 | 1997-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-19 | 2000-12-19 | 2001-06-20 | $7700.00 | Window Closed / Lapsed |