Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
108 words
A monolithic bandpass crystal filter comprising: a crystal wafer having two sides; a pair of juxtaposed electrodes formed with extended leads for connection to other circuits and disposed on a first side of said wafer without conductive coupling but with electroacoustic coupling via said wafer with a gap therebetween which is substantially less than 0.006 inch in width, said gap having been formed by a laser trimming operation which also thereby forms said pair of electrodes from a singular conductive member by separating it into two electrically unconnected portions; at least one further electrode disposed on the second side of said wafer opposite said pair of juxtaposed electrodes.
Claim 2
Dependent Claim
108 words
A monolithic bandpass crystal filter comprising: a crystal wafer having two sides; a pair of juxtaposed electrodes formed with extended leads for connection to other circuits and disposed on a first side of said wafer without conductive coupling but with electroacoustic coupling via said wafer with a gap therebetween which is substantially less than 0.006 inch in width, said gap having been formed by a laser trimming operation which also thereby forms said pair of electrodes from a singular conductive member by separating it into two electrically unconnected portions; at least one further electrode disposed on the second side of said wafer opposite said pair of juxtaposed electrodes.
Claim 3
Dependent Claim
21 words
A monolithic crystal filter as in claim 1 wherein said gap width is within the range of 0.001 to 0.005 inch.
Claim 4
Dependent Claim
29 words
A monolithic crystal filter as in claim 1 wherein each of said pair of juxtaposed electrodes are dimensioned to be no greater than about 0.0009 square inch in area.
Claim 5
Dependent Claim
39 words
A monolithic crystal filter as in claim 1 wherein said electrodes are dimensioned and located so as to provide a filter center frequency in excess of about 40 MHz and a filter bandwidth in excess of about 50 KHz.
Claim 6
Dependent Claim
17 words
A monolithic crystal filter as in claim 1 having a filter bandwidth in excess of 100 KHz.
Claim 7
Dependent Claim
77 words
A monolithic bandpass crystal filter comprising: a crystal wafer having two sides; a pair of juxtaposed electrodes disposed on a first side of said wafer without conductive coupling but with electro-acoustic coupling via said wafer with a gap therebetween which is substantially less than 0.006 inch in width, said gap having been formed by a laser trimming operation; at least one further electrode disposed on the second side of said wafer opposite said pair of juxtaposed electrodes.
Claim 8
Dependent Claim
77 words
A monolithic bandpass crystal filter comprising: a crystal wafer having two sides; a pair of juxtaposed electrodes disposed on a first side of said wafer without conductive coupling but with electro-acoustic coupling via said wafer with a gap therebetween which is substantially less than 0.006 inch in width, said gap having been formed by a laser trimming operation; at least one further electrode disposed on the second side of said wafer opposite said pair of juxtaposed electrodes.
Claim 9
Independent Claim
116 words
A method of making a wideband, high frequency bandpass monolithic crystal filter on a crystal wafer having first and second sides, said method comprising the steps of: forming conductive electrodes on each of said first and second sides of the wafer, said electrodes each having extended leads for connection to other circuits and being disposed in generally opposing positions; and laser trimming a slot through electrode material on at least said first side so as to accurately divide said electrode material and thus, by separating a singular conductive electrode by laser trimming, to provide a pair of completely separated but juxtaposed first electrodes with a gap therebetween which is substantially less than 0.006 inch in width.
Claim 10
Independent Claim
116 words
A method of making a wideband, high frequency bandpass monolithic crystal filter on a crystal wafer having first and second sides, said method comprising the steps of: forming conductive electrodes on each of said first and second sides of the wafer, said electrodes each having extended leads for connection to other circuits and being disposed in generally opposing positions; and laser trimming a slot through electrode material on at least said first side so as to accurately divide said electrode material and thus, by separating a singular conductive electrode by laser trimming, to provide a pair of completely separated but juxtaposed first electrodes with a gap therebetween which is substantially less than 0.006 inch in width.
Claim 11
Dependent Claim
19 words
A method as in claim 7 wherein said gap width is within the range of 0.001 to 0.005 inch.
Claim 12
Dependent Claim
25 words
A method as in claim 7 wherein each of said juxtaposed electrodes are dimensioned to be no greater than about 0.0009 square inch in area.
Claim 13
Dependent Claim
37 words
A method as in claim 7 wherein said electrodes are dimensioned and located so as to provide a filter center frequency in excess of about 40 MHz and a filter bandwidth in excess of about 50 KHz.
Claim 14
Dependent Claim
17 words
A method as in claim 7 wherein said filter has a bandwidth in excess of 100 KHz.
Claim 15
Independent Claim
128 words
A method of making a wideband, high frequency bandpass monolithic crystal filter on a crystal wafer having first and second sides, said method comprising: forming conductive electrodes on each of said first and second sides of the wafer, said electrodes being disposed in generally opposing positions; laser trimming a slot through electrode material on at least said first side so as to accurately divide said electrode material and thus provide a pair of completely separated but juxtaposed first electrodes with a gap therebetween which is substantially less than 0.006 inch in width; and depositing further electrode material onto the electrode located on said second side opposite said gap to produce an area of increased thickness as compared to other areas of said electrode located on said second side.
Claim 16
Independent Claim
128 words
A method of making a wideband, high frequency bandpass monolithic crystal filter on a crystal wafer having first and second sides, said method comprising: forming conductive electrodes on each of said first and second sides of the wafer, said electrodes being disposed in generally opposing positions; laser trimming a slot through electrode material on at least said first side so as to accurately divide said electrode material and thus provide a pair of completely separated but juxtaposed first electrodes with a gap therebetween which is substantially less than 0.006 inch in width; and depositing further electrode material onto the electrode located on said second side opposite said gap to produce an area of increased thickness as compared to other areas of said electrode located on said second side.