US4839612A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-frequency power amplifier having heterojunction bipolar transistor
Assignee: Toshiba Corp
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Filing: 1988-03-11
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Granted: 1989-06-13
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Expires: 2008-03-11
Abstract
Abstract A class C power amplifier has a heterojunction bipolar transistor as an element for amplifying an input signal. A d.c. bias voltage source, such as a d.c. battery, is connected to the transistor, such that a d.c. bias voltage lower than the turn-on voltage of the transistor is applied between the base and emitter of the bipolar transistor. An inductance coil is connected in series between the emitter of the transistor and the d.c. bias voltage source. Since the d.c. bias voltage is applied to the heterojunction bipolar transistor, the external drive voltage for activating the transistor is reduced to increase the high-frequency power gain of the amplifier.
Inventors
- 👤 Junko Akagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:33
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/189; H03F3/19
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
124 words
A power amplifier circuit comprising: a III-V compound semiconductor heterojunction bipolar transistor having a base, an emitter and a collector; and voltage applying means connected between the base and the emitter of said transistor for applying a d.c. bias voltage to said transistor, and for reducing an externally supplied turn-on drive voltage required for rendering said transistor conductive; said d.c. bias voltage having a voltage level which is less than 80% of a specific voltage level needed to turn on said transistor, said d.c. bias voltage ranging between 0.5 volts and 1.2 volts, said voltage applying means comprising a d.c. power source and an inductive element connected in series, said inductive element connected between the emitter of said transistor and said d.c. power source.
Claim 2
Dependent Claim
124 words
A power amplifier circuit comprising: a III-V compound semiconductor heterojunction bipolar transistor having a base, an emitter and a collector; and voltage applying means connected between the base and the emitter of said transistor for applying a d.c. bias voltage to said transistor, and for reducing an externally supplied turn-on drive voltage required for rendering said transistor conductive; said d.c. bias voltage having a voltage level which is less than 80% of a specific voltage level needed to turn on said transistor, said d.c. bias voltage ranging between 0.5 volts and 1.2 volts, said voltage applying means comprising a d.c. power source and an inductive element connected in series, said inductive element connected between the emitter of said transistor and said d.c. power source.
Claim 3
Dependent Claim
20 words
The circuit according to claim 1, wherein said III-V compound semiconductor heterojunction bipolar transistor includes a GaAs heterojunction bipolar transistor.
Claim 4
Dependent Claim
18 words
The circuit according to claim 2, wherein said d.c. bias voltage ranges between 1.0 volt and 1.2 volts.
Claim 5
Dependent Claim
14 words
The circuit according to claim 3, wherein said inductive element includes an inductance coil.
Claim 6
Dependent Claim
20 words
The circuit according to claim 4, wherein said voltage applying means constantly applies the d.c. bias voltage to said transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-12 | 1992-12-12 | 1993-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-12 | 1996-12-12 | 1997-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-12 | 2000-12-12 | 2001-06-13 | $7700.00 | Window Closed / Lapsed |