US4839308A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making an external-coupled-cavity diode laser
Assignee: Verizon Laboratories Inc
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Filing: 1987-10-30
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Granted: 1989-06-13
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Expires: 2007-10-30
Abstract
Abstract A monolithic external-coupled-diode laser structure uses high reflectivity facet coatings to reduce the operating current and to improve suppression of unwanted longitudinal modes.
Inventors
- 👤 Donald M. Fye
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:23
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/10; H01S5/14
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
167 words
A method of making a monolithic external-coupled-cavity diode laser comprising the steps of: providing an n-doped InP substrate having a pair of opposed surfaces; epitaxially depositing a layer of n-doped InP on one of said surfaces of said substrate; epitaxially depositing an active layer of InGaAsP on said epitaxial layer of n-doped InP, epitaxially depositing a layer of p-doped InP on said active layer; epitaxially depositing a layer of p+-doped InGaAsP on said p-doped layer; forming a cavity into at least said p+-doped InGaAsP layer, said p-doped InP layer, said active layer of InGaAsP, and said n-doped InP layer so as to provide an opposing rear facet of said diode laser at said active layer and to provide an opposing external mirror, a portion of said layers opposed to said rear facet being a front facet; depositing coatings of a common material on said facets and said mirror; forming a p-contact on said p+-layer of InGaAsP; and forming an n-contact on a second surface of said substrate.
Claim 2
Independent Claim
167 words
A method of making a monolithic external-coupled-cavity diode laser comprising the steps of: providing an n-doped InP substrate having a pair of opposed surfaces; epitaxially depositing a layer of n-doped InP on one of said surfaces of said substrate; epitaxially depositing an active layer of InGaAsP on said epitaxial layer of n-doped InP, epitaxially depositing a layer of p-doped InP on said active layer; epitaxially depositing a layer of p+-doped InGaAsP on said p-doped layer; forming a cavity into at least said p+-doped InGaAsP layer, said p-doped InP layer, said active layer of InGaAsP, and said n-doped InP layer so as to provide an opposing rear facet of said diode laser at said active layer and to provide an opposing external mirror, a portion of said layers opposed to said rear facet being a front facet; depositing coatings of a common material on said facets and said mirror; forming a p-contact on said p+-layer of InGaAsP; and forming an n-contact on a second surface of said substrate.
Claim 3
Dependent Claim
57 words
The method as recited in claim 1 wherein: the step of depositing coatings includes the step of tilting the laser structure during the deposition process whereby the highly directional application of said coating material will simultaneously coat said front facet and said mirror and then coat said rear facet upon tilting said laser structure in another direction.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-12 | 1992-12-12 | 1993-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-12 | 1996-12-12 | 1997-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-12 | 2000-12-12 | 2001-06-13 | $7700.00 | Window Closed / Lapsed |