US4836012A
Expired / Lapsed
US
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Gas sensor
Assignee: Ametek Inc
•
Filing: 1988-05-26
•
Granted: 1989-06-06
•
Expires: 2008-05-26
Abstract
Abstract A gas sensor comprises a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed. The cell includes in order a conductor, an N-type light-absorbing semiconductor, and a thin light-transmitting gas-absorbing metal Schottky layer having electrical properties which vary with the type of gas sorbed therein.
Inventors
- 👤 Mitchell E. Doty
- 👤 Ferenc J. Schmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:21
CPC Classifications
G; G01; G01N; G01N33/00; G01N33/0004; G01N33/0009; G01N33/0027; Y; Y10; Y10S; Y10S136/00; Y10S136/291
Claims Analysis
Total Claims: 69
Claim 1
Independent Claim
83 words
A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order: (i) a conductor, (ii) an N-type light-absorbing semiconductor, (iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and (iv) a light-transmitting gas-penetrable metal Schottky layer.
Claim 2
Dependent Claim
83 words
A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order: (i) a conductor, (ii) an N-type light-absorbing semiconductor, (iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and (iv) a light-transmitting gas-penetrable metal Schottky layer.
Claim 3
Dependent Claim
10 words
The device of claim 1 wherein said dielectric is phthalocyanine.
Claim 4
Dependent Claim
10 words
The device of claim 2 wherein said phthalocyanine is metal-substituted.
Claim 5
Dependent Claim
13 words
The device of claim 3 wherein said metal substitution is iron or zinc.
Claim 6
Dependent Claim
14 words
The device of claim 1 wherein said metal Schottky layer is non-H 2 -absorbent.
Claim 7
Dependent Claim
12 words
The device of claim 5 wherein said metal Schottky layer is gold.
Claim 8
Dependent Claim
12 words
The device of claim 1 wherein said electrical property is photo current.
Claim 9
Dependent Claim
14 words
The device of claim 1 wherein said N-type light-absorbing semiconductor is CdTe of Si.
Claim 10
Dependent Claim
29 words
The device of claim 1 wherein said N-type light absorbing semiconductor is selected from the group consisting of Si, CuInSe 2 , CdSe, Cd.sub.(1-x) Hg x Te, and GaAs.
Claim 11
Dependent Claim
23 words
The device of claim 1 wherein said electrical property also varies with the quantity of the gas sorbed up to a saturation point.
Claim 12
Dependent Claim
30 words
The device of claim 1 wherein said electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.
Claim 13
Dependent Claim
12 words
The device of claim 1 wherein said dielectric is a clathrating agent.
Claim 14
Dependent Claim
11 words
The device of claim 12 wherein said clathrating agent is thiourea.
Claim 15
Dependent Claim
19 words
The device of claim 12 wherein said clathrating agent is a solid and the guest compound is a gas.
Claim 16
Dependent Claim
24 words
The device of claim 1 wherein said metal Schottky layer is composed of a metal selected from the group consisting of palladium and nickel.
Claim 17
Dependent Claim
27 words
The device of claim 1 wherein said metal Schottky layer is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.
Claim 18
Dependent Claim
83 words
A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order: (i) a conductor, (ii) an N-type light-absorbing semiconductor, (iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and (iv) a thin P-type light-transmitting, gas-penetrable semiconductor.
Claim 19
Dependent Claim
83 words
A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order: (i) a conductor, (ii) an N-type light-absorbing semiconductor, (iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and (iv) a thin P-type light-transmitting, gas-penetrable semiconductor.
Claim 20
Dependent Claim
10 words
The device of claim 17 wherein said dielectric is phthalocyanine.
Claim 21
Dependent Claim
11 words
The device of claim 18 wherein said phthalocyanine is metal substituted.
Claim 22
Dependent Claim
13 words
The device of claim 19 wherein said metal substitution is iron or zinc.
Claim 23
Dependent Claim
12 words
The device of claim 17 wherein said dielectric is a clathrating agent.
Claim 24
Dependent Claim
11 words
The device of claim 21 wherein said clathrating agent is thiourea.
Claim 25
Dependent Claim
19 words
The device of claim 21 wherein said clathrating agent is a solid and the guest compound is a gas.
Claim 26
Dependent Claim
11 words
The device of claim 17 wherein said electrical property is photocurrent.
Claim 27
Dependent Claim
14 words
The device of claim 17 wherein said N-type light-absorbing semiconductor is CdTe or Si.
Claim 28
Dependent Claim
28 words
The device of claim 17 wherein said N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe 2 , CdSe, Cd.sub.(1-x) Hg x Te, and GaAs.
Claim 29
Dependent Claim
23 words
The device of claim 17 wherein said electrical property also varies with the quantity of the gas sorbed up to a saturation point.
Claim 30
Dependent Claim
30 words
The device of claim 17 wherein said electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.
Claim 31
Dependent Claim
26 words
The device of claim 17 wherein said P-type semiconductor is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.
Claim 32
Independent Claim
103 words
A method of sensing gas comprising the steps of: (A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, and a light-transmitting gas-absorbing metal Schottky layer having an electrical property which varies with the type of gas absorbed therein; (B) exposing the gas-absorbing metal Schottky layer to the gas and the N-type light-absorbing semiconductor to the light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the metal Schottky layer.
Claim 33
Independent Claim
103 words
A method of sensing gas comprising the steps of: (A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, and a light-transmitting gas-absorbing metal Schottky layer having an electrical property which varies with the type of gas absorbed therein; (B) exposing the gas-absorbing metal Schottky layer to the gas and the N-type light-absorbing semiconductor to the light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the metal Schottky layer.
Claim 34
Dependent Claim
24 words
The method of claim 30, wherein the metal Schottky layer is composed of a metal selected from the group consisting of palladium and nickel.
Claim 35
Dependent Claim
14 words
The method of claim 30 wherein the N-type light-absorbing semiconductor is CdTe or Si.
Claim 36
Dependent Claim
28 words
The method of claim 30 wherein the N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe 2 , CdSe, Cd.sub.(1-x) Hg x Te, and GaAs.
Claim 37
Dependent Claim
23 words
The method of claim 30 wherein the electrical property also varies with the quantity of the gas sorbed up to a saturation point.
Claim 38
Dependent Claim
30 words
The method of claim 30 wherein the electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.
Claim 39
Independent Claim
103 words
A method of sensing gas comprising the steps of: (A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a light-transmitting gas-penetrable metal Schottky layer; (B) exposing the metal Schottky layer to the gas and to light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the dielectric.
Claim 40
Independent Claim
103 words
A method of sensing gas comprising the steps of: (A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a light-transmitting gas-penetrable metal Schottky layer; (B) exposing the metal Schottky layer to the gas and to light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the dielectric.
Claim 41
Dependent Claim
10 words
The method of claim 36 wherein the dielectric is phthalocyanine.
Claim 42
Dependent Claim
11 words
The method of claim 37 wherein the phthalocyanine is metal substituted.
Claim 43
Dependent Claim
13 words
The method of claim 38 wherein the metal substitution is iron or zinc.
Claim 44
Dependent Claim
12 words
The method of claim 36 wherein the dielectric is a clathrating agent.
Claim 45
Dependent Claim
11 words
The method of claim 40 wherein the clathrating agent is thiourea.
Claim 46
Dependent Claim
19 words
The method of claim 40 wherein the clathrating agent is a solid and the guest compound is a gas.
Claim 47
Dependent Claim
11 words
The method of claim 36 wherein the electrical property is photocurrent.
Claim 48
Dependent Claim
14 words
The method of claim 36 wherein the N-type light-absorbing semiconductor is CdTe or Si.
Claim 49
Dependent Claim
28 words
The method of claim 36 wherein the N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe 2 , CdSe, Cd.sub.(1-x) Hg x Te, and GaAs.
Claim 50
Dependent Claim
23 words
The method of claim 36 wherein the electrical property also varies with the quantity of the gas sorbed up to a saturation point.
Claim 51
Dependent Claim
30 words
The method of claim 36 wherein the electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.
Claim 52
Dependent Claim
14 words
The method of claim 36 wherein the metal Schottky layer is non-H 2 -absorbent.
Claim 53
Dependent Claim
12 words
The method of claim 36 wherein the metal Schottky layer is gold.
Claim 54
Dependent Claim
24 words
The method of claim 36, wherein the metal Schottky layer is composed of a metal selected from the group consisting of palladium and nickel.
Claim 55
Dependent Claim
27 words
The method of claim 36 wherein the metal Schottky layer is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.
Claim 56
Independent Claim
101 words
A method of sensing gas comprising the steps of: (A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a thin P-type light-transmitting gas-penetrable semiconductor; (B) exposing the semiconductor to the gas and to light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the semiconductor.
Claim 57
Independent Claim
101 words
A method of sensing gas comprising the steps of: (A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a thin P-type light-transmitting gas-penetrable semiconductor; (B) exposing the semiconductor to the gas and to light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the semiconductor.
Claim 58
Dependent Claim
10 words
The method of claim 52 wherein the dielectric is phthalocyanine.
Claim 59
Dependent Claim
11 words
The methodd of claim 53 wherein the phthalocyanine is metal substituted.
Claim 60
Dependent Claim
13 words
The method of claim 54 wherein the metal substitution is iron or zinc.
Claim 61
Dependent Claim
12 words
The method of claim 52 wherein the dielectric is a clathrating agent.
Claim 62
Dependent Claim
11 words
The method of claim 56 wherein the clathrating agent is thiourea.
Claim 63
Dependent Claim
19 words
The method of claim 56 wherein the clathrating agent is a solid and the guest compound is a gas.
Claim 64
Dependent Claim
11 words
The method of claim 52 wherein the electrical property is photocurrent.
Claim 65
Dependent Claim
14 words
The method of claim 52 wherein the N-type light-absorbing semiconductor is CdTe or Si.
Claim 66
Dependent Claim
28 words
The method of claim 52 wherein the N-type light-absorbing semiconductor is selected from the group consisting of Si, CuInSe 2 , CdSe, Cd.sub.(1-x) Hg x Te, and GaAs.
Claim 67
Dependent Claim
23 words
The method of claim 52 wherein the electrical property also varies with the quantity of the gas sorbed up to a saturation point.
Claim 68
Dependent Claim
30 words
The method of claim 52 wherein the electrical property is selected from the group consisting of capacitance, resistance and the cell parameters of open circuit voltage and short circuit current.
Claim 69
Dependent Claim
26 words
The method of claim 52 wherein the p-type semiconductor is also gas-absorbing and has an electrical property which varies with the type of gas sorbed therein.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-06-05 | 1992-12-05 | 1993-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-05 | 1996-12-05 | 1997-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-05 | 2000-12-05 | 2001-06-06 | $7700.00 | Window Closed / Lapsed |