Transistor with a high collector-emitter breakthrough voltage

Claim 1

Transistor arrangement with a high collector-emitter breakthrough voltage having a heavily doped emitter zone in a more weakly doped base zone, comprising an even more weakly doped collector zone having a collector contact diffusion region and a buried layer region, the base zone being embedded in said collector zone, said collector zone being formed of a weakly doped epitaxial layer on a weakly doped substrate having a type of conduction opposite that of said epitaxial layer, the buried layer region at least partially underlying the base zone, the buried layer region being heavily doped and being of the same conduction type as that of the collector zone, the heavily doped buried layer region being disposed between said weakly doped substrate and the collector zone, and a junction field-effect transistor located between the base zone and the collector contact diffusion region, said junction field-effect transistor having a width-to-length ratio in accordance with the current to be processed, the collector contact diffusion region surrounding the base zone at a given spacing therefrom, said base zone projecting laterally beyond said buried layer region, said junction field-effect transistor having a channel formed of a region of said collector zone lying between said base zone and said substrate and also between an edge of said base zone and an edge of said buried layer region, said junction field-effect transistor having a source and a drain, respectively formed of the buried layer and the collector contact diffusion zone, respectively, and a region of the collector zone directly bordering the respective buried layer and collector; said emitter zone, said base zone and said collector zone forming a bipolar transistor, and said junction field-effect transistor having a pinch voltage smaller than the collector-emitter breakthrough voltage of said bipolar transistor.