US4835575A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithically integrated waveguide-photodiode combination
Assignee: Siemens AG
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Filing: 1988-02-03
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Granted: 1989-05-30
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Expires: 2008-02-03
Abstract
Abstract A monolithically integrated waveguide-photodiode combination for optical communications systems includes a carrier substrate of n-conductive semiconductor material, a further layer of the same material in whose surface is formed a strip-shaped n-conductive absorption layer, and of a waveguide formed thereon. A p-doping is diffused into the waveguide through the n-conductive absorption layer and a photodiode is thereby formed. A contact for the positive electrode of the photodiode is applied over the p-conductive region and the contact for the negative electrode is applied to the free side of the carrier substrate. The waveguide is covered by a cover layer along its top surface.
Inventors
- 👤 Manfred Plihal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:12
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12004; G02B6/24; G02B6/42; H10F77/00; H10F77/40; H10F77/413
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
153 words
A monolithically integrated waveguide-photodiode combination, comprising: a carrier substrate of a first semiconductor material; a waveguide disposed on said carrier substrate for guiding electromagnetic waves and being of a second semiconductor material, said second semiconductor material having a refractive index higher than a refractive index of said first semiconductor material; at least one photodiode coupled to said waveguide and having a region of p-conductive doping and an n-conductive absorption layer, said n-conductive absorption layer being disposed in a strip in said carrier substrate at a boundary surface between said carrier substrate and said waveguide, said n-conductive absorption layer of said at least one photodiode having a higher refractive index than said second semiconductor material of said waveguide, said p-conductive doping of said photodiode lying in said waveguide, said p-conductive doping extending at least up to a boundary surface of said n-conductive absorption layer; and said waveguide-photodiode combination having a surface which is planar.
Claim 2
Dependent Claim
153 words
A monolithically integrated waveguide-photodiode combination, comprising: a carrier substrate of a first semiconductor material; a waveguide disposed on said carrier substrate for guiding electromagnetic waves and being of a second semiconductor material, said second semiconductor material having a refractive index higher than a refractive index of said first semiconductor material; at least one photodiode coupled to said waveguide and having a region of p-conductive doping and an n-conductive absorption layer, said n-conductive absorption layer being disposed in a strip in said carrier substrate at a boundary surface between said carrier substrate and said waveguide, said n-conductive absorption layer of said at least one photodiode having a higher refractive index than said second semiconductor material of said waveguide, said p-conductive doping of said photodiode lying in said waveguide, said p-conductive doping extending at least up to a boundary surface of said n-conductive absorption layer; and said waveguide-photodiode combination having a surface which is planar.
Claim 3
Dependent Claim
40 words
A monolithically integrated waveguide-photodiode combination as claimed in claim 1, further comprising: a layer of Si 3 N 4 applied to said waveguide as a passivation layer and as a mask for diffusion and for contacts for a positive electrode.
Claim 4
Dependent Claim
51 words
A monolithically integrated waveguide-photodiode combination as claimed in claim 1, further comprising: an epitaxially applied further layer provided between said carrier substrate and said waveguide, said further layer being of said first semiconductor material; and said n-conductive absorption layer of said at least one photodiode being integrated into said further layer.
Claim 5
Dependent Claim
22 words
A monolithically integrated waveguide-photodiode combination as claimed in claim 1, wherein said first semiconductor material of said carrier substrate is of InP.
Claim 6
Dependent Claim
20 words
A monolithically integrated waveguide-photodiode combination as claimed in claim 1, wherein said carrier substrate is of a semi-insulating semiconductor material.
Claim 7
Dependent Claim
30 words
A monolithically integrated waveguide-photodiode combination as claimed in claim 1, wherein said waveguide is composed of InGaAsP, and the n-conductive strip-shaped absorption layer of said photodiode is composed of InGaAs.
Claim 8
Dependent Claim
43 words
A monolithically integrated waveguide-photodiode combination as claimed in claim 1, further comprising: an additional layer of said first semiconductor material applied to said waveguide at a side opposite said carrier substrate so that said first semiconductor material surrounds said waveguide at two sides.
Claim 9
Dependent Claim
37 words
A monolithically integrated waveguide-photodiode combination as claimed in claim 1, wherein said waveguide is a strip waveguide, and wherein said at least one photodiode is a plurality of diodes connected to a plurality of said strip waveguides.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |