Photosemiconductor element

Abstract

Abstract PURPOSE:To obtain a light-emitting element having a big photoconfining effect or a light-receiving element having a big quantum effect by a method wherein a semiconductor layer of a III-V family compound is formed on an InP substrate for making it into a light-emitting element or a light-receiving element, whereby an active layer or a photoabsorptive layer composing it is made of an AlCaInAs layer of a specific composition. CONSTITUTION:When a semiconductor of a III-V family compound is formed on an InP substrate, an AlGaInAs layer capable of making an energy gap 0.73-1.5 eV is used as an active layer or a photoabsorptive layer. Namely the active layer or the photoabsorptive layer is made of an AlxCayIn1-x-yAs layer of 0<x<=0.47, 0>y<=0.47. Further thereon an AluGayIn1-x-yAs layer of 0<u<=0.47, 0<=v<=0.47 having a bigger energy gap than this is laminated as the photoconfining layer or a window layer. Thereby a melt back phenomenon at the making time is eliminated to improve grid matching.

Inventors

• 👤 Kazuo Nakajima

Bibliographic Details